Magnetic field detection device

Patent metadata

Field	Value
Publication number	US-2018275216-A1
Application number	US-201815919530-A
Country	US
Kind code	A1
Filing date	Mar 13, 2018
Priority date	Mar 27, 2017
Publication date	Sep 27, 2018
Grant date	—

Abstract

A magnetic field detection device includes a base, a first yoke, and a magneto-resistive effect element. The first yoke is provided on the base, and includes first and second principal surfaces each extending along a first plane, and a first end surface coupling the first and second principal surfaces. The magneto-resistive effect element is provided on the base, and includes a magnetization free layer disposed at a position overlapped with the first yoke in a first direction along the first plane. The first end surface includes an inverted tapered surface inclined relative to the first plane and extending closer to a center point of the magnetization free layer as being away from the base in a second direction orthogonal to the first plane. A distance from the center point to a first edge is shorter than a distance from the center point to a second edge.

First claim

What is claimed is:

1 . A magnetic field detection device comprising:
a base; a first yoke provided on the base, the first yoke including a first principal surface that extends along a first plane, a second principal surface that extends along the first plane, and a first end surface that couples the first principal surface and the second principal surface; and a magneto-resistive effect element provided on the base, and including a magnetization free layer that is disposed at a position overlapped with the first yoke in a first direction along the first plane, the first end surface including an inverted tapered surface, the inverted tapered surface extending closer to a center point of the magnetization free layer as being away from the base in a second direction orthogonal to the first plane, and being inclined relative to the first plane, and a distance from the center point of the magnetization free layer to a first edge being shorter than a distance from the center point of the magnetization free layer to a second edge, the first edge being a location at which the first principal surface and the first end surface intersect each other, the second edge being a location at which the second principal surface and the first end surface intersect each other.

2 . The magnetic field detection device according to claim 1 , wherein
a first distance between a position of the center point of the magnetization free layer in the first direction and a position of the first edge in the first direction is smaller than a second distance between the position of the center point of the magnetization free layer in the first direction and a position of the second edge in the first direction, and a third distance between a position of the center point of the magnetization free layer in the second direction and a position of the first edge in the second direction is smaller than a fourth distance between the position of the center point of the magnetization free layer in the second direction and a position of the second edge in the second direction.

3 . The magnetic field detection device according to claim 1 , further comprising a second yoke disposed at a position that is positioned on side opposite to the first yoke in the first direction as viewed from the magneto-resistive effect element, and that is overlapped with the magnetization free layer in the first direction, the second yoke including a third principal surface that extends along the first plane, a fourth principal surface that extends along the first plane, and a second end surface that couples the third principal surface and the fourth principal surface,
the second end surface including an inverted tapered surface, the inverted tapered surface extending closer to the center point of the magnetization free layer as being away from the base, and being inclined relative to the first plane, and a distance from the center point of the magnetization free layer to a third edge being shorter than a distance from the center point of the magnetization free layer to a fourth edge, the third edge being a location at which the third principal surface and the second end surface intersect each other, the fourth edge being a location at which the fourth principal surface and the second end surface intersect each other.

4 . The magnetic field detection device according to claim 3 , wherein
a fifth distance between a position of the center point of the magnetization free layer in the first direction and a position of the third edge in the first direction is smaller than a sixth distance between the position of the center point of the magnetization free layer in the first direction and a position of the fourth edge in the first direction, a seventh distance between a position of the center point of the magnetization free layer in the second direction and a position of the third edge in the second direction is smaller than an eighth distance between the position of the center point of the magnetization free layer in the second direction and a position of the fourth edge in the second direction, and a first spacing between a position of the first edge in the first direction and the position of the third edge in the first direction is narrower than a second spacing between a position of the second edge in the first direction and the position of the fourth edge in the first direction.

5 . The magnetic field detection device according to claim 3 , wherein a thickness of the first yoke and a thickness of the second yoke are substantially same as each other.

6 . The magnetic field detection device according to claim 3 , wherein
a position of the first principal surface in the second direction and a position of the third principal surface in the second direction are substantially coincident with each other, and a position of the second principal surface in the second direction and a position of the fourth principal surface in the second direction are substantially coincident with each other.

7 . The magnetic field detection device according to claim 3 , wherein the magnetization free layer is disposed at a position overlapped with both of a part of the first yoke and a part of the second yoke in the second direction.

8 . The magnetic field detection device according to claim 3 , further comprising a third yoke that is disposed at a position other than a position overlapped with the center point of the magnetization free layer in the second direction.

9 . The magnetic field detection device according to claim 8 , wherein the third yoke is disposed at the position overlapped with the first yoke in the second direction.

10 . The magnetic field detection device according to claim 9 , wherein the magneto-resistive effect element and the third yoke are spaced apart from each other in the first direction.

11 . The magnetic field detection device according to claim 3 , further comprising a third yoke and a fourth yoke that are each disposed at a position other than a position overlapped with the center point of the magnetization free layer in the second direction.

12 . The magnetic field detection device according to claim 11 , wherein
the third yoke is disposed at the position overlapped with the first yoke in the second direction, and the fourth yoke is disposed at a position overlapped with the second yoke in the second direction.

13 . The magnetic field detection device according to claim 11 , wherein the third yoke and the fourth yoke are disposed at positions that are positioned on sides opposite to each other in the second direction, with the magneto-resistive effect element being interposed therebetween.

14 . The magnetic field detection device according to claim 11 , wherein
the magneto-resistive effect element and the third yoke are spaced apart from each other in the first direction, and the magneto-resistive effect element and the fourth yoke are spaced apart from each other in the first direction.

15 . The magnetic field detection device according to claim 1 , wherein the magnetization free layer extends along the first plane.

Assignees

• Tdk Corp

Inventors

• Tanaka Yoshiaki
• Hiraki Tetsuya
• Watanabe Kazuya
• Watanabe Suguru

Classifications

• G01R33/098

  comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title

• G01R33/091 Primary

  Constructional adaptation of the sensor to specific applications · CPC title

• H01L43/08

  Electricity · mapped topic

• G01R33/093

  using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00) · CPC title

• H10N50/10

  Magnetoresistive devices · CPC title