Adhesive bonding composition and electronic components prepared from the same

Patent metadata

Field	Value
Publication number	US-2018269174-A1
Application number	US-201715459907-A
Country	US
Kind code	A1
Filing date	Mar 15, 2017
Priority date	Mar 15, 2017
Publication date	Sep 20, 2018
Grant date	—

Abstract

A curable resin or adhesive composition includes at least one monomer, a photoinitiator capable of initiating polymerization of the monomer when exposed to light, and at least one energy converting material, preferably a phosphor, capable of producing light when exposed to radiation (typically X-rays). The material is particularly suitable for bonding components at ambient temperature in situations where the bond joint is not accessible to an external light source. An associated method includes: placing a polymerizable adhesive composition, including a photoinitiator and energy converting material, such as a down-converting phosphor, in contact with at least two components to be bonded to form an assembly; and, irradiating the assembly with radiation at a first wavelength, capable of conversion (down-conversion by the phosphor) to a second wavelength capable of activating the photoinitiator, to prepare items such as inkjet cartridges, wafer-to-wafer assemblies, semiconductors, integrated circuits, and the like.

First claim

1 . An electronic component, comprising:
a semiconductor device attached to a substrate, wherein the semiconductor device is attached to the substrate through a plurality of rigid protrusions attached to one side of the semiconductor device, which are configured to be in electrical contact with a plurality of electrical pads situated on the substrate; wherein the plurality of rigid protrusions are formed from a first curable resin or adhesive composition comprising:
an organic vehicle comprising at least one polymerizable monomer;
at least one photo-initiator responsive to a selected wavelength of light; and,
at least one energy converting material selected to emit said wavelength of light when exposed to a selected imparted radiation;
such that upon application of the selected imparted radiation, the first curable resin or adhesive composition is cured to provide the rigid protrusions between the semiconductor device and the plurality of electrical pads on the substrate.

2 . The electronic component of claim 1 , wherein the plurality of rigid protrusions are electrically conductive.

3 . The electronic component of claim 1 , further comprising an underfill material forming a layer between the semiconductor device and substrate and between each of the plurality of protrusions and electrical pads, wherein the underfill material comprises a second cured resin formed from a second curable resin or adhesive composition comprising:
an organic vehicle comprising at least one polymerizable monomer; at least one photo-initiator responsive to a selected wavelength of light; and, at least one energy converting material selected to emit said wavelength of light when exposed to a selected imparted radiation.

4 . The electronic component of claim 1 , further comprising a metallic heat sink layer attached to a side of the semiconductor component opposite the side having the plurality of protrusions, wherein the metallic heat sink layer is attached to the semiconductor component using a third cured resin formed from a third curable resin or adhesive composition, comprising:
an organic vehicle comprising at least one polymerizable monomer; at least one photo-initiator responsive to a selected wavelength of light; and, at least one energy converting material selected to emit said wavelength of light when exposed to a selected imparted radiation; wherein the third cured resin is thermally conductive.

5 . The electronic component of claim 4 , wherein the third cured resin is made thermally conductive by the inclusion of particles in the third cured resin, wherein the particles are selected from the group consisting of metal particles and metal nitride particles.

6 . The electronic component of claim 5 , wherein particles are metal nitride particles.

7 . The electronic component of claim 6 , wherein the metal nitride particles are a member selected from the group consisting of AlN and BN.

8 . The electronic component of claim 2 , further comprising a metallic heat sink layer attached to a side of the semiconductor component opposite the side having the plurality of protrusions, wherein the metallic heat sink layer is attached to the semiconductor component using a third cured resin formed from a third curable resin or adhesive composition, comprising:
an organic vehicle comprising at least one polymerizable monomer; at least one photo-initiator responsive to a selected wavelength of light; and, at least one energy converting material selected to emit said wavelength of light when exposed to a selected imparted radiation; wherein the third cured resin is thermally conductive.

9 . The electronic component of claim 8 , wherein the third cured resin is made thermally conductive by the inclusion of particles in the third cured resin, wherein the particles are selected from the group consisting of metal particles and metal nitride particles.

10 . The electronic component of claim 9 , wherein particles are metal nitride particles.

11 . The electronic component of claim 10 , wherein the metal nitride particles are a member selected from the group consisting of AlN and BN.

12 . The electronic component of claim 3 , further comprising a metallic heat sink layer attached to a side of the semiconductor component opposite the side having the plurality of protrusions, wherein the metallic heat sink layer is attached to the semiconductor component using a third cured resin formed from a third curable resin or adhesive composition, comprising:
an organic vehicle comprising at least one polymerizable monomer; at least one photo-initiator responsive to a selected wavelength of light; and, at least one energy converting material selected to emit said wavelength of light when exposed to a selected imparted radiation; wherein the third cured resin is thermally conductive.

13 . The electronic component of claim 12 , wherein the third cured resin is made thermally conductive by the inclusion of particles in the third cured resin, wherein the particles are selected from the group consisting of metal particles and metal nitride particles.

14 . The electronic component of claim 13 , wherein particles are metal nitride particles.

15 . The electronic component of claim 14 , wherein the metal nitride particles are a member selected from the group consisting of AlN and BN.

16 . A packaged device, comprising the electric component according to any one of claims 1 - 15 , wherein the metallic heat sink layer extends beyond edges of the semiconductor device and is connected to support sides which support the metallic heat sink layer from the substrate to hermetically seal the semiconductor device.

17 . The packaged device of claim 16 , wherein at least a portion of the metallic heat sink layer is replaced with a window which is transparent to one or more wavelengths of light received or transmitted by the semiconductor component.

18 . The packaged device of claim 17 , wherein at least a portion of at least one support side is replaced with a window which is transparent to one or more wavelengths of light received or transmitted by the semiconductor component.

19 . The packaged device of claim 16 , wherein at least a portion of at least one support side is replaced with a window which is transparent to one or more wavelengths of light received or transmitted by the semiconductor component.

20 . An encapsulated semiconductor device, comprising an electronic component of claim 1 , having a glob top encapsulating at least the substrate, protrusions and electrical pads.

21 . The encapsulated semiconductor device of claim 20 , wherein the glob top is formed from curing a curable resin or adhesive composition, comprising:
an organic vehicle comprising at least one polymerizable monomer; at least one photo-initiator responsive to a selected wavelength of light; and, at least one energy converting material selected to emit said wavelength of light when exposed to a selected imparted radiation.

22 . The encapsulated semiconductor device of claim 20 , wherein the glob top has high optical transmissivity.

23 . The encapsulated semiconductor device of claim 21 , wherein the at least one energy converting material has a particle size smaller than a desired wavelength of transmissivity of the cured resin or adhesive composition, in order to provide glob top with a desired optical transmissivity.

24 . The encapsulated semiconductor device of c

Assignees

• Immunolight Llc

Inventors

• Fathi Zakaryae
• Clayton James
• Walder Harold
• Bourke Jr Frederic A

Classifications

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W74/15

  on active surfaces of flip-chip devices, e.g. underfills · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title