Photodetector with conductive channel made from two dimensional material and its manufacturing method

Patent metadata

Field	Value
Publication number	US-2018261702-A1
Application number	US-201615761200-A
Country	US
Kind code	A1
Filing date	Sep 12, 2016
Priority date	Sep 22, 2015
Publication date	Sep 13, 2018
Grant date	—

Abstract

A photodetector ( 400 ) has a two dimensional conductive channel ( 302, 408 ) with source and drain electrodes ( 404 ) configured to enable a flow of electrical current through the two dimensional conductive channel ( 302, 408 ); and a quantum dot layer ( 304, 406 ) overlying the two dimensional conductive channel ( 302, 408 ), the quantum dot layer ( 304, 406 ) configured to generate charge on exposure to incident electromagnetic radiation ( 310 ), the generated charge producing an electric field which causes a change in electrical current passing through the underlying two dimensional conductive channel ( 302, 408 ), the change in electrical current being indicative of one or more of the presence and magnitude of the incident electromagnetic radiation ( 310 ); wherein the quantum dot layer ( 304, 406 ) is configured to have an incident electromagnetic radiation surface ( 312 ) which has a texturing comprising undulations in the surface to provide a surface roughness with an average peak amplitude ( 308 ) of the order of between 10 nm and 300 nm. The surface texture increases the amount of electromagnetic radiation absorbed in the quantum dot layer ( 304, 406 ) in comparison to a photodetector having a flat (non-textured) incident electromagnetic radiation surface.

First claim

1 - 15 . (canceled)

16 . An apparatus comprising:
a conductive channel with source and drain electrodes configured to enable a flow of electrical current through the conductive channel; and a quantum dot layer overlying the conductive channel, the quantum dot layer configured to generate charge on exposure to incident electromagnetic radiation, the generated charge producing an electric field which causes a change in electrical current passing through the underlying conductive channel, the change in electrical current indicative of one or more of the presence and magnitude of the incident electromagnetic radiation; wherein the quantum dot layer is configured to have an incident electromagnetic radiation surface, opposite the surface in contact with the conductive channel, which has a texturing comprising undulations in the surface to provide a surface roughness with an average peak amplitude of the order of between 10 nm and 300 nm.

17 . The apparatus of claim 16 , wherein the quantum dot layer is configured to have an incident electromagnetic radiation surface which has a texturing comprising undulations in the surface to provide a surface roughness with an average peak separation of the order of between 50 nm and 2000 nm.

18 . The apparatus of claim 16 , wherein the quantum dot layer is configured to have an incident electromagnetic radiation surface which has a texturing comprising undulations in the surface to provide a surface roughness with an average peak separation of the order of between 50 nm and 800 nm.

19 . The apparatus of claim 16 , wherein the surface roughness is provided by one or more of:
the quantum dot layer conforming to an underlying surface texture provided to the conductive channel; and the quantum dot layer comprising the surface roughness such that the incident electromagnetic radiation surface is at least independent of any underlying surface texture provided to the conductive channel.

20 . The apparatus of claim 16 , wherein the surface roughness is provided by one or more of:
the quantum dot layer having a variable thickness providing the surface roughness with an average peak amplitude of the order of between 10 nm and 300 nm; and the underlying surface texture provided to the conductive channel providing the surface roughness with an average peak amplitude of the order of between 10 nm and 300 nm.

21 . The apparatus of claim 16 , wherein the surface roughness is provided by one or more of:
the quantum dot layer having a variable thickness providing the surface roughness with an average peak separation of the order of between 50 nm and 2000 nm; and the underlying surface texture provided to the conductive channel providing the surface roughness with an average peak separation of the order of between 50 nm and 2000 nm.

22 . The apparatus of claim 16 , wherein the quantum dot layer has a thickness of between about 10 nm and 500 nm.

23 . The apparatus of claim 16 , wherein the quantum dot layer is deposited from colloidal quantum dots, or wherein the quantum dot layer comprises colloidal quantum dots.

24 . The apparatus of claim 16 , wherein the conductive channel comprises graphene.

25 . The apparatus of claim 16 , wherein the undulations in the surface of the quantum dot layer comprise one or more of: periodic undulations, rounded pyramidal undulations, pyramidal undulations, U-shaped undulations, hemispherical undulations, and irregular undulations.

26 . The apparatus of claim 16 , further comprising:
a dielectric layer underlying the conductive channel; and a gate layer underlying the dielectric layer, such that the conductive channel is located between the dielectric layer and the quantum dot layer.

27 . A method comprising:
providing a conductive channel; providing source and drain electrodes configured to enable a flow of electrical current through the conductive channel; and providing a quantum dot layer overlying the conductive channel, the quantum dot layer configured to generate charge on exposure to incident electromagnetic radiation, the generated charge producing an electric field which causes a change in electrical current passing through the underlying conductive channel, the change in electrical current indicative of one or more of the presence and magnitude of the incident electromagnetic radiation; wherein the quantum dot layer is configured to have an incident electromagnetic radiation surface opposite the surface in contact with the conductive channel, which has a texturing comprising undulations in the surface to provide a surface roughness with an average peak amplitude of the order of between 10 nm and 300 nm.

28 . The method of claim 27 , wherein providing the quantum dot layer comprises one or more of:
depositing a layer of quantum dots so that it conforms with an underlying surface texture provided to the conductive channel; and depositing a layer of quantum dots such that the layer of quantum dots has the surface roughness such that the incident electromagnetic radiation surface is at least independent of any underlying surface texture provided to the conductive channel.

29 . The method of claim 27 , wherein providing the quantum dot layer comprises depositing the quantum dot layer as a wet layer, and imprinting the wet quantum dot layer with a textured mould to provide the incident electromagnetic radiation surface with the surface roughness so that the quantum dot layer comprises the surface roughness.

30 . The method of claim 29 wherein a face of the mould engages with the wet layer, the face of the mould having a textured surface with an average peak amplitude of the order of between 10 nm and 300 nm.

31 . The method of claim 27 , wherein the method comprises:
texturing a substrate surface; depositing the conductive channel over the textured substrate surface so that it conforms to the underlying textured substrate surface to provide a textured conductive channel surface having texturing comprising undulations in the surface; and depositing a layer of quantum dots on the textured conductive channel such that the quantum dot layer conforms to the textured surface to provide the surface roughness with an average peak amplitude of the order of between 10 nm and 300 nm.

32 . The method of claim 31 , wherein:
the substrate comprises a polymer; and the substrate surface is textured by depositing the substrate as a liquid and imprinting the liquid substrate with a mould to form the textured substrate surface.

33 . The method of claim 31 , wherein the method comprises:
depositing a metallic seed layer onto the textured substrate so that it conforms to the textured substrate; and depositing the conductive channel onto the textured metallic seed layer using chemical vapour deposition so that it conforms to the underlying textured metallic seed layer to provide the surface roughness to the incident electromagnetic radiation surface.

34 . The method of claim 27 , wherein the method comprises:
providing a sacrificial substrate layer having a textured sacrificial substrate surface; depositing the conductive channel on the textured sacrificial substrate surface so that it conforms to the textured sacrificial substrate surface; depositing a polymer layer onto the conductive channel; and releasing the sacrificial substrate layer to expose the conductive channel having texturing comprising undulations in the surface to provide the surface roughness to the incident electromagnetic radiation surface.

Assignees

• Nokia Technologies Oy

Inventors

• Bessonov Alexander
• Robinson Adam
• Cotton Darryl
• White Richard

Classifications

• Y02E10/547

  Monocrystalline silicon PV cells · CPC title

• H01L31/112

  Electricity · mapped topic

• H01L31/035218

  Electricity · mapped topic

• H01L31/02363

  Electricity · mapped topic

• H01L31/02366

  Electricity · mapped topic