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US-2024215432-A1 · Jun 27, 2024 · US
US2018248122A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018248122-A1 |
| Application number | US-201615754149-A |
| Country | US |
| Kind code | A1 |
| Filing date | Aug 18, 2016 |
| Priority date | Aug 24, 2015 |
| Publication date | Aug 30, 2018 |
| Grant date | — |
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A leveling agent is oriented in the surface part of a layer formed from a coated film having the oriented leveling agent on its surface. The purpose of the present invention is to provide an ink composition for organic semiconductor device that can form a satisfactory film even on a low surface energy layer. The ink composition for organic semiconductor device contains a first organic semiconductor device material, a leveling agent, a first solvent, and an aromatic solvent. The leveling agent is a polymer at least containing a siloxane monomer as a monomer unit, and the first solvent has a surface tension of 25 mN/m or less.
Opening claim text (preview).
1 . An ink composition for organic semiconductor device comprising a first organic semiconductor device material, a leveling agent, a first solvent, and an aromatic solvent, wherein the leveling agent is a polymer at least containing a siloxane monomer as a monomer unit; and the first solvent has a surface tension of 25 mN/m or less. 2 . The ink composition for organic semiconductor device according to claim 1 , wherein the leveling agent further contains an aromatic group-containing monomer as a monomer unit. 3 . The ink composition for organic semiconductor device according to claim 1 , wherein the leveling agent includes a block copolymer. 4 . The ink composition for organic semiconductor device according to claim 1 , wherein a silicon content rate of the leveling agent is 10 mass % or more. 5 . The ink composition for organic semiconductor device according to claim 1 , wherein the first solvent has a surface tension of less than 23 mN/m. 6 . The ink composition for organic semiconductor device according to claim 1 , wherein the aromatic solvent has a surface tension of less than 36 mN/m. 7 . The ink composition for organic semiconductor device according to claim 1 , wherein a solvent surface energy A represented by Expression (1): A = ( E 1 × W 1 W 1 + W 2 ) + ( E 2 × W 2 W 1 + W 2 ) ( 1 ) (where, E 1 represents the surface tension of the first solvent, W 1 represents the mass of the first solvent, E 2 represents the surface tension of the aromatic solvent, and W 2 represents the mass of the aromatic solvent) is less than 30. 8 . The ink composition for organic semiconductor device according to claim 1 , wherein the first organic semiconductor device material is a hole transport material. 9 . The ink composition for organic semiconductor device according to claim 1 , wherein the organic semiconductor is an organic light-emitting device. 10 . An organic semiconductor device comprising: a second layer containing a second organic semiconductor device material; and a first layer containing a first organic semiconductor device material and a leveling agent and disposed right above the second layer, wherein the second layer has a surface energy of 28 mN/m or less; and the leveling agent is a polymer at least containing a siloxane monomer as a monomer unit. 11 . The organic semiconductor device according to claim 10 , wherein the first organic semiconductor device material is a hole transport material. 12 . The organic semiconductor device according to claim 11 , wherein the organic semiconductor device is an organic light-emitting device.
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