Light-emitting component, light-emitting device, and image forming apparatus

Patent metadata

Field	Value
Publication number	US-2018234584-A1
Application number	US-201815891383-A
Country	US
Kind code	A1
Filing date	Feb 8, 2018
Priority date	Feb 13, 2017
Publication date	Aug 16, 2018
Grant date	—

Abstract

A light-emitting component includes a substrate, a light-emitting element, a thyristor, and a light-transmission reduction layer. The light-emitting element is disposed on the substrate. The thyristor causes the light-emitting element to emit light or causes an amount of light emitted by the light-emitting element to increase, upon entering an on-state. The light-transmission reduction layer is disposed between the light-emitting element and the thyristor such that the light-emitting element and the thyristor are stacked, and suppresses light emitted by the thyristor from passing therethrough.

First claim

What is claimed is:

1 . A light-emitting component comprising:
a substrate; a light-emitting element disposed on the substrate; a thyristor that causes the light-emitting element to emit light or causes an amount of light emitted by the light-emitting element to increase, upon entering an on-state; and a light-transmission reduction layer that is disposed between the light-emitting element and the thyristor such that the light-emitting element and the thyristor are stacked and that suppresses light emitted by the thyristor from passing therethrough.

2 . The light-emitting component according to claim 1 , wherein the light emitted by the light-emitting element and the light emitted by the thyristor have different wavelengths.

3 . The light-emitting component according to claim 1 , wherein the light-transmission reduction layer includes a semiconductor layer having a bandgap energy smaller than a bandgap energy equivalent to the light emitted by the thyristor.

4 . The light-emitting component according to claim 2 , wherein the light-transmission reduction layer includes a semiconductor layer having a bandgap energy smaller than a bandgap energy equivalent to the light emitted by the thyristor.

5 . The light-emitting component according to claim 1 , wherein
each of the light-emitting element and the thyristor includes a plurality of semiconductor layers that are stacked, and the light-transmission reduction layer includes a semiconductor layer having a conductivity type identical to a conductivity type of one of a light-emitting-element-side semiconductor layer that is in contact with the light-transmission reduction layer among the plurality of semiconductor layers of the light-emitting element and a thyristor-side semiconductor layer that is in contact with the light-transmission reduction layer among the plurality of semiconductor layers of the thyristor, and having an impurity concentration higher than an impurity concentration of the one of the light-emitting-element-side semiconductor layer and the thyristor-side semiconductor layer.

6 . The light-emitting component according to claim 2 , wherein
each of the light-emitting element and the thyristor includes a plurality of semiconductor layers that are stacked, and the light-transmission reduction layer includes a semiconductor layer having a conductivity type identical to a conductivity type of one of a light-emitting-element-side semiconductor layer that is in contact with the light-transmission reduction layer among the plurality of semiconductor layers of the light-emitting element and a thyristor-side semiconductor layer that is in contact with the light-transmission reduction layer among the plurality of semiconductor layers of the thyristor, and having an impurity concentration higher than an impurity concentration of the one of the light-emitting-element-side semiconductor layer and the thyristor-side semiconductor layer.

7 . The light-emitting component according to claim 1 , wherein
each of the light-emitting element and the thyristor includes a plurality of semiconductor layers that are stacked, and the light-transmission reduction layer is configured to maintain a direction in which a current easily flows in a case where a light-emitting-element-side semiconductor layer that is in contact with the light-transmission reduction layer among the plurality of semiconductor layers of the light-emitting element and a thyristor-side semiconductor layer that is in contact with the light-transmission reduction layer among the plurality of semiconductor layers of the thyristor are directly joined.

8 . The light-emitting component according to claim 2 , wherein
each of the light-emitting element and the thyristor includes a plurality of semiconductor layers that are stacked, and the light-transmission reduction layer is configured to maintain a direction in which a current easily flows in a case where a light-emitting-element-side semiconductor layer that is in contact with the light-transmission reduction layer among the plurality of semiconductor layers of the light-emitting element and a thyristor-side semiconductor layer that is in contact with the light-transmission reduction layer among the plurality of semiconductor layers of the thyristor are directly joined.

9 . The light-emitting component according to claim 1 , wherein
each of the light-emitting element, the thyristor, and the light-transmission reduction layer includes a plurality of semiconductor layers that are stacked, a semiconductor layer that is in contact with the light-transmission reduction layer among the plurality of semiconductor layers of the thyristor and a semiconductor layer that is in contact with the thyristor among the plurality of semiconductor layers of the light-transmission reduction layer have an identical conductivity type, a semiconductor layer that is in contact with the light-transmission reduction layer among the plurality of semiconductor layers of the light-emitting element and a semiconductor layer that in is in contact with the light-emitting element among the plurality of semiconductor layers of the light-transmission reduction layer have an identical conductivity type, the semiconductor layer that is in contact with the thyristor among the plurality of semiconductor layers of the light-transmission reduction layer has an impurity concentration higher than an impurity concentration of the semiconductor layer that is in contact with the light-transmission reduction layer among the plurality of semiconductor layers of the thyristor, and the semiconductor layer that in is in contact with the light-emitting element among the plurality of semiconductor layers of the light-transmission reduction layer has an impurity concentration higher than an impurity concentration of the semiconductor layer that is in contact with the light-transmission reduction layer among the plurality of semiconductor layers of the light-emitting element.

10 . The light-emitting component according to claim 2 , wherein
each of the light-emitting element, the thyristor, and the light-transmission reduction layer includes a plurality of semiconductor layers that are stacked, a semiconductor layer that is in contact with the light-transmission reduction layer among the plurality of semiconductor layers of the thyristor and a semiconductor layer that is in contact with the thyristor among the plurality of semiconductor layers of the light-transmission reduction layer have an identical conductivity type, a semiconductor layer that is in contact with the light-transmission reduction layer among the plurality of semiconductor layers of the light-emitting element and a semiconductor layer that in is in contact with the light-emitting element among the plurality of semiconductor layers of the light-transmission reduction layer have an identical conductivity type, the semiconductor layer that is in contact with the thyristor among the plurality of semiconductor layers of the light-transmission reduction layer has an impurity concentration higher than an impurity concentration of the semiconductor layer that is in contact with the light-transmission reduction layer among the plurality of semiconductor layers of the thyristor, and the semiconductor layer that in is in contact with the light-emitting element among the plurality of semiconductor layers of the light-transmission reduction layer has an impurity concentration higher than an impurity concentration of the semiconductor layer that is in contact with the light-transmission reduction layer among the plurality of semiconductor layers of the light-emitting element.

11 . The light-emitting component

Assignees

• Fuji Xerox Co Ltd

Inventors

• Kondo Takashi

Classifications

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H10P50/646

  of Group III-V materials · CPC title

• H10P14/3421

  Arsenides · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title