Light-Emitting Diode and Manufacturing Method Thereof, Light-Emitting Device

Patent metadata

Field	Value
Publication number	US-2018233688-A1
Application number	US-201715570000-A
Country	US
Kind code	A1
Filing date	Apr 13, 2017
Priority date	Jun 6, 2016
Publication date	Aug 16, 2018
Grant date	—

Abstract

A light-emitting diode (LED), a manufacturing method thereof and a light-emitting device are disclosed. The LED includes a cathode, an anode and a functional layer located between the cathode and the anode. The functional layer includes a light-emitting layer and at least one of a hole transporting layer and an electron transporting layer. At least one of the hole transporting layer and the electron transporting layer includes a material having perovskite structure expressed by a general formula of ABX3, wherein A is RNH3 or Cs, R is CnH2n+1, n≥1; X is at least one of Cl, Br and I; B is at least one of Plumbum (Pb), Germanium (Ge), Bismuth (Bi), Stannum (Sn), Cuprum (Cu), Manganese (Mn) and Stibium (Sb).

First claim

1 . A light-emitting diode (LED), comprising: a cathode; an anode; and a functional layer located between the cathode and the anode,
the functional layer comprises a light-emitting layer (LEL) and at least one of a hole transporting layer (HTL) and an electron transporting layer (ETL), at least one of the HTL and the ETL comprises a material having perovskite structure expressed by a general formula of ABX 3 , wherein A is RNH 3 or Cs, R is C n H 2n+1 , n≥1; X is at least one of Cl, Br and I; B is at least one of Plumbum (Pb), Germanium (Ge), Bismuth (Bi), Stannum (Sn), Cuprum (Cu), Manganese (Mn) and Stibium (Sb).

2 . The light-emitting diode (LED) according to claim 1 , wherein the HTL and the ETL are made from a same material.

3 . The light-emitting diode (LED) according to claim 1 , wherein the ETL is located between the cathode and the LEL; and
an electron barrier layer is disposed between the LEL and the ETL.

4 . The light-emitting diode (LED) according to claim 3 , wherein the electron barrier layer is made from a material including at least one of polymethyl methacrylate (PMMA) and polyvinyl carbazole (PVK).

5 . The light-emitting diode (LED) according to claim 1 , wherein the HTL is located between the anode and the LEL; and
a hole barrier layer is disposed between the LEL and the HTL.

6 . The light-emitting diode (LED) according to claim 5 , wherein the hole barrier layer is made from a material including at least one of:
N,N′-bis(3-methyl-phenyl)-N,N′-diphenyl-1,1′-diphenyl-4,4′-diamine (TPD); 4,4′,4″-tris(carbazol-9-yl)-triphenylamine (TcTa); 2-(4-diphenyl)-5-(4-t-butylphenyl)-1,3,4-oxadiazole (PBD); polyvinyl carbazole (PVK); N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-diphenyl-4,4′-diamine (NPB); 4,4′-cyclohexylidenebis[N,N-bis(4-methylphenyl)aniline] (TAPC); N,N,N′,N′-tetrafluorenyl benzidine (FFD); triphenylamine tetramer (TPTE); and TFB, wherein TFB is [9,9′-dioctylfluorene-copoly-N-(4-butoxybenzyl)-diphenylamine)]m, and wherein m>100.

7 . The light-emitting diode (LED) according to claim 1 , wherein the functional layer further comprises a hole injection layer (HIL) and an electron injection layer (EIL),
the anode is made from a transparent conductive material; the HIL is made from a material including poly(3,4-ethylenedioxythiophene)/polystyrene sulfonate (PEDOT: PSS); the LEL is an organic LEL or a quantum-dot LEL; the EIL is made from a material including LiF or nano-zinc oxide; and the cathode is made from a material including Al or Ag.

8 . The light-emitting diode (LED) according to claim 1 , comprising at least one of an organic light-emitting diode (OLED) and a quantum dot light-emitting diode (QD-LED).

9 . A manufacturing method of a light-emitting diode (LED), comprising:
forming a cathode and an anode; and forming a functional layer located between the cathode and the anode,
forming a functional layer comprises: forming at least one of a hole transporting layer (HTL) and an electron transporting layer (ETL); and forming a light-emitting layer (LEL),
at least one of the HTL and the ETL comprises a material having perovskite structure expressed by a general formula of ABX 3 , wherein A is RNH 3 or Cs, R is C n H 2n+1 , n≥1; X is at least one of Cl, Br and I; B is at least one of Plumbum (Pb), Germanium (Ge), Bismuth (Bi), Stannum (Sn), Cuprum (Cu), Manganese (Mn) and Stibium (Sb).

10 . The manufacturing method of a light-emitting diode (LED) according to claim 9 , wherein forming a material having perovskite structure comprises:
preparing a solution of metal halide, the metal halide contains a metallic element which is at least one of Plumbum (Pb), Germanium (Ge), Bismuth (Bi), Stannum (Sn), Cuprum (Cu), Manganese (Mn) and Stibium (Sb); coating the solution of metal halide onto a substrate and annealing the substrate having been coated with the solution of metal halide, so as to obtain a thin film of metal halide; immersing the substrate having been formed with the thin film of metal halide into a solution of cesium halide or halogenated alkylamine to obtain the material having perovskite structure.

11 . The manufacturing method of a light-emitting diode (LED) according to claim 10 , wherein the solution of metal halide has a concentration of 0.1 mol/L-2 mol/L.

12 . The manufacturing method of a light-emitting diode (LED) according to claim 10 , wherein the solution of metal halide uses at least one of N,N′-dimethylformamide, dimethyl sulfoxide and γ-butyrolactone as a solvent.

13 . The manufacturing method of a light-emitting diode (LED) according to claim 10 , wherein the solution of cesium halide or halogenated alkylamine uses an alcoholic solution as a solvent.

14 . The manufacturing method of a light-emitting diode (LED) according to claim 13 , further comprising:
prior to immersing the substrate having been formed with the thin film of metal halide into the solution of cesium halide or halogenated alkylamine, immersing the thin film of metal halide into an alcoholic solution.

15 . The manufacturing method of a light-emitting diode (LED) according to claim 9 , wherein
forming a material having perovskite structure comprises: forming the material having perovskite structure on the substrate by evaporation process.

16 . The manufacturing method of a light-emitting diode (LED) according to claim 15 , wherein at least two evaporation sources are provided.

17 . The manufacturing method of a light-emitting diode (LED) according to claim 16 , wherein the evaporation sources comprise AX a and BX b ; or the evaporation sources comprise AX a , BX′ b and BX″ c ,
wherein X′ and X″ are any two of Cl, Br and I.

18 . The manufacturing method of a light-emitting diode (LED) according to claim 9 , wherein
forming a light-emitting layer comprises at least one of: forming an organic light-emitting layer; and forming a quantum dot light-emitting layer.

19 . The manufacturing method of a light-emitting diode (LED) according to claim 9 , wherein
forming a functional layer further comprises: forming at least one of an electron injection layer (EIL), a hole injection layer (HIL), an electron barrier layer and a hole barrier layer.

20 . A light-emitting device, comprising the light-emitting diode (LED) according to claim 1 .

Assignees

• Boe Technology Group Co Ltd

Inventors

• Chen Zhuo
• Li Yanzhao

Classifications

• H01L51/0058

  Electricity · mapped topic

• H01L51/502

  Electricity · mapped topic

• H01L2051/0063

  Electricity · mapped topic

• H01L51/006

  Electricity · mapped topic

• H01L51/0077

  Electricity · mapped topic