Transparent active layer, thin film transistor comprising same, and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-2018233584-A1
Application number	US-201815947969-A
Country	US
Kind code	A1
Filing date	Apr 9, 2018
Priority date	Oct 8, 2015
Publication date	Aug 16, 2018
Grant date	—

Abstract

A method of fabricating a thin film transistor includes preparing a plastic substrate, forming a transparent active layer on the plastic substrate through an atomic layer deposition method by providing a first source including zinc on the plastic substrate and providing a second source including sulfur on the plastic substrate, providing a gate electrode overlapping with the transparent active layer, and providing a gate insulating layer between the gate electrode and the transparent active layer. A ratio of the providing of the first source to the providing of the second source ranges from 7:1 to 13:1.

First claim

What is claimed is:

1 . A method of fabricating a thin film transistor, the method comprising:
preparing a plastic substrate; forming a transparent active layer on the plastic substrate through an atomic layer deposition method by providing a first source including zinc on the plastic substrate and providing a second source including sulfur on the plastic substrate, wherein a ratio of the providing of the first source to the providing of the second source ranges from 7:1 to 13:1; providing a gate electrode overlapping with the transparent active layer; and providing a gate insulating layer between the gate electrode and the transparent active layer.

2 . The method of claim 1 , wherein the first source and the second source are provided at a process temperature of 80 degrees Celsius.

3 . The method of claim 1 , wherein flexibility of the transparent active layer is adjusted by adjusting the number of times the first source and the second source are provided, under the condition that the ratio of the providing of the first source to the providing of the second source ranges from 7:1 to 13:1.

4 . The method of claim 3 , wherein the flexibility of the transparent active layer increases as a ratio of the providing of the second source to the providing of the first source increases.

5 . The method of claim 1 , wherein the second source has a thiol group.

6 . A thin film transistor comprising:
a plastic substrate; a transparent active layer disposed on the plastic substrate and including sulfur of 2.60% to 6.45% and zinc of 33.98% to 43.90%; a gate electrode overlapping with the transparent active layer; and a gate insulating layer between the gate electrode and the transparent active layer.

7 . The thin film transistor of claim 6 , wherein the thin film transistor has an on/off ratio of 10 6 or more.

8 . The thin film transistor of claim 6 , wherein the transparent active layer has a mobility of 7 cm 2 /Vs or more.

Assignees

• Iucf Hyu

Inventors

• Sung Myung Mo
• Han Kyu-Seok
• Yoon Kwan Hyuck

Classifications

• H10P14/3428

  Sulfides · CPC title

• H10P14/3238

  being insulating materials · CPC title

• H10P14/2922

  being non-crystalline insulating materials, e.g. glass or polymers · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H01L29/66742 Primary

  Electricity · mapped topic