High Work Function MoO2 Back Contacts for Improved Solar Cell Performance

US2018226524A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2018226524-A1
Application numberUS-201715425717-A
CountryUS
Kind codeA1
Filing dateFeb 6, 2017
Priority dateFeb 6, 2017
Publication dateAug 9, 2018
Grant date

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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Improved high work function back contacts for solar cells are provided. In one aspect, a method of forming a solar cell includes: forming a completed solar cell having a substrate coated with an electrically conductive material, an absorber disposed on the electrically conductive material, a buffer layer disposed on the absorber, a transparent front contact disposed on the buffer layer, and a metal grid disposed on the transparent front contact; removing the substrate and the electrically conductive material using exfoliation, exposing a backside surface of the solar cell; depositing a high work function material onto the back side surface of the solar cell; and depositing a back contact onto the high work function material. A solar cell formed by the present techniques is also provided. Yield of the exfoliated device can be improved by removing bubbles from adhesive used for exfoliation and/or forming contact pads to access the metal grid.

First claim

Opening claim text (preview).

What is claimed is: 1 . A method of forming a solar cell, the method comprising: forming a completed solar cell comprising a substrate coated with an electrically conductive material, an absorber disposed on the electrically conductive material, a buffer layer disposed on the absorber, a transparent front contact disposed on the buffer layer, and a metal grid disposed on the transparent front contact; removing the substrate and the electrically conductive material using exfoliation, exposing a backside surface of the solar cell; depositing a high work function material onto the back side surface of the solar cell; and depositing a back contact onto the high work function material. 2 . The method of claim 1 , wherein the absorber comprises copper, zinc, tin, and at least one of sulfur and selenium. 3 . The method of claim 1 , wherein the absorber has a thickness of from about 0.5 μm to about 2 μm, and ranges therebetween. 4 . The method of claim 1 , wherein the high work function material comprises molybdenum dioxide. 5 . The method of claim 1 , wherein the back contact comprises a metal selected from the group consisting of: gold, platinum, silver, and combinations thereof. 6 . The method of claim 1 , further comprising: attaching a handle substrate to a top surface of the solar cell. 7 . The method of claim 6 , wherein the handle substrate comprises a fused silica plate. 8 . The method of claim 6 , wherein the handle substrate is attached to the top surface of the solar cell using an epoxy, the method further comprising: preparing the epoxy under a vacuum to prevent formation of bubbles in the epoxy. 9 . The method of claim 8 , further comprising: spinning the epoxy in a centrifuge to remove bubbles from the epoxy. 10 . The method of claim 1 , further comprising: forming a via in the solar cell by selectively removing a portion of the solar cell down to the electrically conductive material. 11 . The method of claim 10 , further comprising: forming a patterned mask on a top surface of the solar cell; and depositing a contact metal, through the patterned mask, into the via forming a through contact in the via. 12 . The method of claim 11 , wherein the contact metal is selected from the group consisting of: nickel and aluminum. 13 . The method of claim 11 further comprising: depositing the contact metal, through the patterned mask, forming a contact pad connecting the through contact to the metal grid. 14 . The method of claim 1 , further comprising: smoothing the backside surface of the solar cell after the substrate and the electrically conductive material have been removed. 15 . The method of claim 14 , wherein the smoothing is performed using a wet etch. 16 . The method of claim 15 , wherein the wet etch comprises bromine methanol. 17 . A solar cell comprising: a back contact; a high work function material disposed on the back contact; an absorber disposed on the high work function material; a buffer layer disposed on the absorber; a transparent front contact disposed on the buffer layer; and a metal grid disposed on the transparent front contact. 18 . The solar cell of claim 17 , further comprising: a via in the solar cell that extends down to the high work function material. 19 . The solar cell of claim 18 , further comprising: a through contact in the via. 20 . The solar cell of claim 19 , further comprising: a contact pad connecting the through contact to the metal grid.

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What does patent US2018226524A1 cover?
Improved high work function back contacts for solar cells are provided. In one aspect, a method of forming a solar cell includes: forming a completed solar cell having a substrate coated with an electrically conductive material, an absorber disposed on the electrically conductive material, a buffer layer disposed on the absorber, a transparent front contact disposed on the buffer layer, and a m…
Who is the assignee on this patent?
IBM
What technology area does this patent fall under?
Primary CPC classification H01L31/022441. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Aug 09 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).