Display substrate, display panel, and display apparatus
US-2024411399-A1 · Dec 12, 2024 · US
US2018224960A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018224960-A1 |
| Application number | US-201515506071-A |
| Country | US |
| Kind code | A1 |
| Filing date | Sep 23, 2015 |
| Priority date | Sep 24, 2014 |
| Publication date | Aug 9, 2018 |
| Grant date | — |
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The present application relates to a conductive structure and a method for manufacturing the same. The conductive structure according to an exemplary embodiment of the present application includes a substrate, a metal layer which is provided on the substrate and includes copper, a discoloration preventing layer provided on the metal layer, and a darkening layer which is provided on the discoloration preventing layer and includes one or more of copper oxide, copper nitride, copper oxynitride, aluminum oxide, aluminum nitride, and aluminum oxynitride.
Opening claim text (preview).
1 . A conductive structure, comprising: a substrate; a metal layer which is provided on the substrate and includes copper; a discoloration preventing layer provided on the metal layer; and a darkening layer which is provided on the discoloration preventing layer and includes one or more of copper oxide, copper nitride, copper oxynitride, aluminum oxide, aluminum nitride, and aluminum oxynitride. 2 . The conductive structure of claim 1 , wherein the discoloration preventing layer includes one or more selected from a group consisting of Ti, Ru, Ta, TiN, Al, Cu, Ni, and an alloy thereof. 3 . The conductive structure of claim 1 , wherein the metal layer has a thickness of 100 μm to 160 μm. 4 . The conductive structure of claim 1 , wherein the discoloration preventing layer has a thickness of 0.1 nm to 30 nm. 5 . The conductive structure of claim 1 , wherein the darkening layer has a thickness of 20 nm to 30 nm. 6 . The conductive structure of claim 1 , wherein total reflectance measured in a direction opposite to a surface of the darkening layer which is in contact with the metal layer, is 20% or less. 7 . The conductive structure of claim 6 , wherein when a thermal treatment is performed under a condition of 150° C. for 30 minutes or longer, change in the total reflectance of the conductive structure is less than 5%. 8 . The conductive structure of claim 1 , wherein a sheet resistance of the conductive structure is 1 Ω/square or more and 300 Ω/square or less. 9 . The conductive structure of claim 1 , wherein the conductive structure has an average extinction coefficient (k) from 0.4 to 1.0 in a visible ray region. 10 . The conductive structure of claim 1 , wherein the conductive structure has a luminance value (L*) of 50 or less based on the CIE L*a*b* color coordinate. 11 . A method for manufacturing a conductive structure, the method comprising: forming a metal layer including copper on a substrate; forming a discoloration preventing layer on the metal layer; and forming a darkening layer including one or more of copper oxide, copper nitride, copper oxynitride, aluminum oxide, aluminum nitride, and aluminum oxynitride on the discoloration preventing layer. 12 . The method of claim 11 , wherein the discoloration preventing layer includes one or more selected from a group consisting of Ti, Ru, Ta, TiN, Al, Cu, Ni, and an alloy thereof. 13 . The method of claim 11 , wherein the metal layer, the discoloration preventing layer, or the darkening layer are independently formed by an evaporation deposition method or a sputtering process. 14 . An electronic element comprising the conductive structure of claim 1 .
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