Conductive structure and preparation method therefor

US2018224960A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2018224960-A1
Application numberUS-201515506071-A
CountryUS
Kind codeA1
Filing dateSep 23, 2015
Priority dateSep 24, 2014
Publication dateAug 9, 2018
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present application relates to a conductive structure and a method for manufacturing the same. The conductive structure according to an exemplary embodiment of the present application includes a substrate, a metal layer which is provided on the substrate and includes copper, a discoloration preventing layer provided on the metal layer, and a darkening layer which is provided on the discoloration preventing layer and includes one or more of copper oxide, copper nitride, copper oxynitride, aluminum oxide, aluminum nitride, and aluminum oxynitride.

First claim

Opening claim text (preview).

1 . A conductive structure, comprising: a substrate; a metal layer which is provided on the substrate and includes copper; a discoloration preventing layer provided on the metal layer; and a darkening layer which is provided on the discoloration preventing layer and includes one or more of copper oxide, copper nitride, copper oxynitride, aluminum oxide, aluminum nitride, and aluminum oxynitride. 2 . The conductive structure of claim 1 , wherein the discoloration preventing layer includes one or more selected from a group consisting of Ti, Ru, Ta, TiN, Al, Cu, Ni, and an alloy thereof. 3 . The conductive structure of claim 1 , wherein the metal layer has a thickness of 100 μm to 160 μm. 4 . The conductive structure of claim 1 , wherein the discoloration preventing layer has a thickness of 0.1 nm to 30 nm. 5 . The conductive structure of claim 1 , wherein the darkening layer has a thickness of 20 nm to 30 nm. 6 . The conductive structure of claim 1 , wherein total reflectance measured in a direction opposite to a surface of the darkening layer which is in contact with the metal layer, is 20% or less. 7 . The conductive structure of claim 6 , wherein when a thermal treatment is performed under a condition of 150° C. for 30 minutes or longer, change in the total reflectance of the conductive structure is less than 5%. 8 . The conductive structure of claim 1 , wherein a sheet resistance of the conductive structure is 1 Ω/square or more and 300 Ω/square or less. 9 . The conductive structure of claim 1 , wherein the conductive structure has an average extinction coefficient (k) from 0.4 to 1.0 in a visible ray region. 10 . The conductive structure of claim 1 , wherein the conductive structure has a luminance value (L*) of 50 or less based on the CIE L*a*b* color coordinate. 11 . A method for manufacturing a conductive structure, the method comprising: forming a metal layer including copper on a substrate; forming a discoloration preventing layer on the metal layer; and forming a darkening layer including one or more of copper oxide, copper nitride, copper oxynitride, aluminum oxide, aluminum nitride, and aluminum oxynitride on the discoloration preventing layer. 12 . The method of claim 11 , wherein the discoloration preventing layer includes one or more selected from a group consisting of Ti, Ru, Ta, TiN, Al, Cu, Ni, and an alloy thereof. 13 . The method of claim 11 , wherein the metal layer, the discoloration preventing layer, or the darkening layer are independently formed by an evaporation deposition method or a sputtering process. 14 . An electronic element comprising the conductive structure of claim 1 .

Assignees

Inventors

Classifications

  • Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal · CPC title

  • Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices · CPC title

  • Digitisers structurally integrated in a display · CPC title

  • G06F3/041Primary

    Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means · CPC title

  • using resistive elements, e.g. a single continuous surface or two parallel surfaces put in contact · CPC title

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What does patent US2018224960A1 cover?
The present application relates to a conductive structure and a method for manufacturing the same. The conductive structure according to an exemplary embodiment of the present application includes a substrate, a metal layer which is provided on the substrate and includes copper, a discoloration preventing layer provided on the metal layer, and a darkening layer which is provided on the discolor…
Who is the assignee on this patent?
Lg Chemical Ltd
What technology area does this patent fall under?
Primary CPC classification G06F3/041. Mapped technology areas include Physics.
When was this patent published?
Publication date Thu Aug 09 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).