Waveguide modulator structures

Patent metadata

Field	Value
Publication number	US-2018217469-A1
Application number	US-201815927943-A
Country	US
Kind code	A1
Filing date	Mar 21, 2018
Priority date	Mar 5, 2015
Publication date	Aug 2, 2018
Grant date	—

Abstract

An optoelectronic device and method of making the same. In some embodiments, the optoelectronic device includes a substrate, a Mach-Zehnder waveguide modulator, and an epitaxial crystalline cladding layer. The Mach-Zehnder waveguide modulator includes a left arm including a left SiGe optical waveguide, and a right arm including a right SiGe optical waveguide, each of the left and right optical waveguides including a junction region and a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction regions via dispersion. The epitaxial crystalline cladding layer is on top of the substrate and beneath the junction region of the left optical waveguide and/or the junction region of the right optical waveguide, and has a refractive index which is less than a refractive index of the respective junction region(s), such that optical power is confined to the respective junction region(s).

First claim

What is claimed is:

1 . An optoelectronic device, comprising:
a substrate; a Mach-Zehnder waveguide modulator, the Mach-Zehnder waveguide modulator comprising: a left arm including a left SiGe optical waveguide, and a right arm including a right SiGe optical waveguide, wherein each of the left and right optical waveguides comprises a junction region and a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction regions via dispersion; and an epitaxial crystalline cladding layer, on top of the substrate and beneath the junction region of the left optical waveguide and/or the junction region of the right optical waveguide, wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the respective junction region(s), such that optical power is confined to the respective junction region(s).

2 . An optoelectronic device according to claim 1 , wherein the junction region of each of the left and right optical waveguides comprises a PIN region, the junction formed from:
a first semiconductor region corresponding to either a P-doped region or an N-doped region; and a second semiconductor region corresponding to the other of the P-doped or N-doped region; and a central SiGe waveguide region; and a plurality of electrodes configured to apply a forward bias across one or both of the PIN junctions to enable control of the phase of light travelling through the respective PIN junction region(s) via dispersion.

3 . An optoelectronic device according to claim 2 ,
wherein the first semiconductor region of the left optical waveguide is integral with the first semiconductor region of the right optical waveguide in a region between the left and right arms, forming a common doped region.

4 . An optoelectronic device according to claim 2 ,
wherein the first semiconductor region of the left optical waveguide is electrically isolated from the first semiconductor region of the right optical waveguide by a central isolated region between the left and right arms.

5 . An optoelectronic device according to claim 1 , wherein the junction of each of the left and right optical waveguides comprises a PN junction, the PN junction formed from:
a first semiconductor region corresponding to either a P-doped region or an N-doped region; a second semiconductor region corresponding to the other of the P-doped or N-doped region; and a plurality of electrodes configured to apply a reverse bias across one or both of the PN junctions to enable control of the phase of light travelling through the respective PN junction region(s) via dispersion.

6 . An optoelectronic device according to claim 2 , wherein:
one of the first or second semiconductor regions includes a vertical doped portion which extends along the side of the waveguide.

7 . An optoelectronic device according to claim 6 , wherein the vertical doped portion only extends in the vertical direction along a portion of the side wall of the waveguide, such that the central SiGe waveguide region has a greater height than the vertical doped region.

8 . An optoelectronic device according to claim 7 , wherein the vertical doped portion extends along the entire side of the waveguide.

9 . An optoelectronic device according to claim 2 , comprising:
an intervening lightly P-doped semiconductor region located between the P-doped semiconductor region and the central waveguide region; wherein the intervening lightly P-doped semiconductor region has a lower dopant concentration than the P-doped semiconductor region.

10 . An optoelectronic device according to claim 2 , comprising:
an intervening lightly N-doped semiconductor region located between the N-doped semiconductor region and the central waveguide region; wherein the intervening lightly N-doped semiconductor region has a lower dopant concentration than the N-doped semiconductor region.

11 . An optoelectronic device according to claim 2 , wherein:
the central waveguide is composed of SiGe and the doped semiconductor regions are composed of Si or SiGe.

12 . An optoelectronic device according to claim 3 , wherein the plurality of electrodes includes a common electrode located at the common doped region.

13 . An optoelectronic device according to claim 2 wherein, for each waveguide arm:
the first semiconductor region includes a first lateral portion extending laterally away from the waveguide wall on a first side of the waveguide;
the second semiconductor region includes a second lateral portion extending laterally away from the waveguide wall on a second side of the waveguide; and
the plurality of electrodes comprises:
a first electrode located directly on top of the first lateral portion; and
a second electrode located directly on top of the first lateral portion.

14 . An optoelectronic device according to claim 1 , configured to operate in a push-pull mode.

15 . An optoelectronic device according to claim 1 , wherein the cladding layer is formed of silicon or SiGe.

16 . An optoelectronic device according to claim 1 , further comprising:
an insulating layer, disposed on a first and/or second horizontal side of the cladding layer, wherein the cladding layer has a height from the substrate substantially equal to that of the insulating layer.

17 . An optoelectronic device according to claim 1 , wherein the Mach-Zehnder waveguide modulator is disposed within a cavity of a silicon-on-insulator layer which is disposed above the substrate.

18 . An optoelectronic device according to claim 1 , wherein the left and right optical waveguides are formed of SiGe having a first composition, and the cladding layer is formed of the SiGe having a second composition different to the first composition.

19 . An optoelectronic device, formed on a silicon-on-insulator wafer comprising a substrate, an insulating layer, and a silicon-on-insulator layer, the silicon-on-insulator layer comprising:
a Mach-Zehnder waveguide modulator, the Mach-Zehnder waveguide modulator comprising: a left arm including a left SiGe optical waveguide, and a right arm including a right SiGe optical waveguide, wherein each of the left and right optical waveguides comprises a junction region and a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction regions via dispersion; and a cladding layer, formed of a different material to the material of the insulating layer, on top of the substrate and beneath the junction region of the left optical waveguide or the junction region of the right optical waveguide, or both, wherein the cladding layer has a refractive index which is less than a refractive index of the respective junction region(s) such that an optical mode of the optoelectronic device is confined inside the respective junction region(s), and wherein the insulating layer does not extend below the respective junction region(s).

20 . An optoelectronic device, comprising:
a substrate; a Mach-Zehnder waveguide modulator, the Mach-Zehnder waveguide modulator comprising: a left arm including a left optical waveguide, and a right arm including a right optical waveguide, wherein each of the left and right optical waveguides comprises a junction region and a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction regions via dispersion; and an epit

Assignees

• Rockley Photonics Ltd

Inventors

• Yu Guomin
• Zilkie Aaron John
• Abediasl Hooman
• Lerose Damiana
• Nagra Amit Singh
• Srinivasan Pradeep
• Jones Haydn Frederick

Classifications

• G02F2001/212

  Physics · mapped topic

• G02F1/2257 Primary

  the optical waveguides being made of semiconducting material · CPC title

• G02F2202/10

  semiconductor · CPC title

• G02F1/212

  Mach-Zehnder type · CPC title

• G02F2201/126

  push-pull · CPC title