Method for pecvd deposition of a graphene-based layer on a substrate

Patent metadata

Field	Value
Publication number	US-2018216230-A1
Application number	US-201615743833-A
Country	US
Kind code	A1
Filing date	Jul 13, 2016
Priority date	Jul 14, 2015
Publication date	Aug 2, 2018
Grant date	—

Abstract

A method for depositing a graphene-based layer on a substrate by means of chemical vapor deposition is provided in which at least one hydrocarbon is introduced into a vacuum chamber as a starting material for a chemical reaction and, concurrently, a plasma is formed inside the vacuum chamber. In this case, at least one magnetron is used to generate the plasma, where the magnetron comprises at least one target of a material comprising at least one catalytically active metal selected from the group of chemical elements having the atomic numbers 21 to 30, 39 to 48, 57, 72 to 80 and 89; and where the sputtering of the target is set in such a way that the fraction of target particles, embedded in the graphene-based layer, is less than 1 at %.

First claim

1 . A method comprising depositing a graphene-based layer on a substrate by means of chemical vapor deposition, the depositing comprising:
admitting at least one hydrocarbon is admitted into a vacuum chamber as a starting material for a chemical reaction, and concurrently, and forming a plasma inside the vacuum chamber, wherein at least one magnetron generates the plasma, wherein the at least one magnetron comprises at least one target of a material comprising at least one catalytically active metal selected from the group of chemical elements having the atomic numbers 21 to 30, 39 to 48, 57, 72 to 80 and 89, and wherein a sputtering of the at least one target is set in such a way that a fraction of target particles embedded in the graphene-based layer is less than 1 at %.

2 . The method of claim 1 , wherein methane and/or acetylene is/are introduced into the vacuum chamber as a hydrocarbon.

3 . The method of claim 1 , wherein a substrate is used that has no catalytically active metal in the surface area to be coated.

4 . The method of claim 1 , wherein the at least one target includes a copper-containing target.

5 . The method of claim 1 , wherein a process temperature is selected that is less than 900 degrees Celsius.

6 . The method of claim 5 , wherein a process temperature is selected that is less than 500 degrees Celsius.

7 . The method of claim 1 , wherein at least one inert gas is introduced into the vacuum chamber.

8 . The method of claim 7 , wherein an argon/helium gas mixture having a helium content of at least 60% is introduced into the vacuum chamber.

9 . (canceled)

Assignees

• Fraunhofer Ges Forschung

Inventors

• Wald Katrin
• Fahland Matthias
• Günther Steffen
• Schiller Nicolas

Classifications

• C23C16/26

  Deposition of carbon only · CPC title

• C23C16/503

  using DC or AC discharges · CPC title

• C23C14/0605

  Carbon · CPC title

• C23C16/50 Primary

  using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} · CPC title

• C23C14/35 Primary

  by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} · CPC title