Display substrate having an organic layer and fabricating method thereof

Patent metadata

Field	Value
Publication number	US-2018204858-A1
Application number	US-201615533159-A
Country	US
Kind code	A1
Filing date	Nov 24, 2016
Priority date	Jun 17, 2016
Publication date	Jul 19, 2018
Grant date	—

Abstract

The present application discloses a method of fabricating a display substrate having an organic layer for reducing parasitic capacitance between electrodes in different layers. The method includes forming the organic layer on a base substrate; subjecting the organic layer to a surface treatment process to descum organic residues from a surface of the organic layer; and forming a passivation layer on a side of the organic layer distal to the base substrate subsequent to subjecting the organic layer to the surface treatment process.

First claim

1 . A method of fabricating a display substrate having an organic layer for reducing parasitic capacitance between electrodes in different layers, comprising:
forming the organic layer on a base substrate; subjecting the organic layer to a surface treatment process to descum organic residues from a surface of the organic layer; and forming a passivation layer on a side of the organic layer distal to the base substrate subsequent to subjecting the organic layer to the surface treatment process.

2 . The method of claim 1 , wherein the surface treatment process includes treating the surface of the organic layer with a plasma;
reacting the organic residues with the plasma to form one or more reaction products; and removing the one or more reaction products from the display substrate.

3 . The method of claim 2 , wherein the plasma comprises one or more of nitrous oxide, oxygen, and nitrogen.

4 . The method of claim 2 , wherein a power level for maintaining the plasma is in a range of approximately 2 kw to approximately 25 kw.

5 . The method of claim 4 , wherein the power level for maintaining the plasma is in a range of approximately 8 kw to approximately 15 kw.

6 . The method of claim 3 , wherein the surface of the organic layer is treated with the plasma for a duration in a range of approximately 5 seconds to approximately 120 seconds.

7 . The method of claim 6 , wherein the surface of the organic layer is treated with the plasma for a duration in a range of approximately 10 seconds to approximately 60 seconds.

8 . The method of claim 3 , wherein the one or more reaction products comprise carbon oxides and nitrogen oxides; and
removing the one or more reaction products is performed by vacuuming.

9 . The method of claim 1 , wherein the surface treatment process is performed at a temperature in a range of approximately 170 degrees to approximately 500 degrees in a system maintained with a power level in a range of approximately 1 kw to approximately 50 kw.

10 . The method of claim 1 , wherein the organic layer is made of one or more of polyacrylate, polysilane, polyimide, polyvinylidene fluoride, polypropylene, and polytetrafluoroethylene.

11 . The method of claim 2 , subsequent to forming the organic layer and prior to forming the passivation layer, further comprising:
forming a first electrode layer on a side of the organic layer distal to the base substrate; wherein the passivation layer is formed on a side of the first electrode layer and the organic layer distal to the base substrate.

12 . The method of claim 11 , wherein the surface treatment process is performed subsequent to forming the first electrode layer and prior to forming the passivation layer.

13 . The method of claim 11 , wherein the surface treatment process is performed prior to forming the first electrode layer and prior to forming the passivation layer.

14 . The method of claim 11 , wherein the first electrode layer is a pixel electrode layer.

15 . The method of claim 14 , further comprising forming a second electrode layer on a side of the passivation layer distal to the organic layer;
wherein the second electrode layer is a common electrode layer.

16 . The method of claim 11 , prior to forming the organic layer, further comprising forming a thin film transistor on the base substrate;
wherein the thin film transistor is formed on a side of the organic layer proximal to the base substrate.

17 . The method of claim 16 , wherein forming the thin film transistor comprises forming an active layer;
wherein the active layer is forming using one of a metal oxide material, amorphous silicon, polycrystalline silicon, and an organic semiconductor.

18 . A display substrate fabricated by a method of claim 1 .

19 . A display panel, comprising a display substrate of claim 18 .

20 . A display apparatus, comprising a display panel of claim 19 .

Assignees

• Boe Technology Group Co Ltd
• Hefei Xinsheng Optoelectronics Technology Co Ltd

Inventors

• Zou Zhixiang
• Yang Chengshao
• Song Botao
• Huang Yinhu

Classifications

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/6528

  In-situ cleaning after layer formation, e.g. removing process residues · CPC title

• H10P14/687

  the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene · CPC title

• H10P14/683

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title

• G02F2202/103

  a-Si · CPC title