Sapphire thin film coated substrate

Patent metadata

Field	Value
Publication number	US-2018202036-A1
Application number	US-201815897166-A
Country	US
Kind code	A1
Filing date	Feb 15, 2018
Priority date	Dec 23, 2011
Publication date	Jul 19, 2018
Grant date	—

Abstract

A method to transfer a layer of harder thin film substrate onto a softer, flexible substrate. In particular, the present invention provides a method to deposit a layer of sapphire thin film on to a softer and flexible substrate e.g. quartz, fused silica, silicon, glass, toughened glass, PET, polymers, plastics, paper and fabrics. This combination provides the hardness of sapphire thin film to softer flexible substrates.

First claim

What is claimed is:

1 . A method for coating sapphire on to a substrate comprising:
a first e-beam evaporation or sputtering deposition process at room temperature or 25° C., wherein at least one buffer layer is deposited directly on to a substrate selected from polymers, plastics, paper, fabrics, PMMA, or PET to form an at least one buffer layer coated substrate, wherein the at least one buffer layer coated substrate during deposition is without external cooling or heating; and a second e-beam evaporation or sputtering deposition process at room temperature or 25° C., wherein sapphire is deposited directly on to the at least one buffer layer coated substrate to form a sapphire coated substrate, wherein the at least one buffer layer coated substrate during deposition is without external cooling or heating; wherein the at least one buffer layer material has a mechanical hardness higher than that of the substrate and lower than that of the sapphire; and wherein the at least one buffer layer material has a refractive index higher than that of the substrate and lower than that of the sapphire.

2 . The method according to claim 1 , wherein the mechanical hardness of said at least one buffer layer material ranges from 1 to 5.5 Mohs scale.

3 . The method according to claim 1 , wherein the refractive index of said at least one buffer layer material ranges from 1.45 to 1.65.

4 . The method according to claim 1 , wherein said at least one buffer layer material comprise silicon dioxide and SiO 2 .

5 . A method for protecting a surface of a substrate by coating said surface with sapphire using the method according to claim 1 .

6 . A screen fabricated by using the method according to claim 1 for use in displays.

7 . A sapphire-coated substrate made by the method according to claim 1 .

Assignees

• Univ Hong Kong Baptist Univ

Inventors

• Cheah Kok Wai
• Lam Wing Yui
• Tam Hoi Lam

Classifications

• C03C2218/32

  After-treatment · CPC title

• C23C14/3464

  using more than one target (C23C14/56 takes precedence) · CPC title

• C03C17/3649

  made of metals other than silver · CPC title

• C03C17/36

  at least one coating being a metal · CPC title

• C23C14/34

  Sputtering · CPC title