A method of forming oxide quantum dots and uses thereof

US2018201831A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2018201831-A1
Application numberUS-201615748334-A
CountryUS
Kind codeA1
Filing dateJul 29, 2016
Priority dateJul 29, 2015
Publication dateJul 19, 2018
Grant date

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A method of forming oxide quantum dots is disclosed. The method may provide for the highly controlled formation of the oxide quantum dots. A composition comprising oxide quantum dots is also disclosed. The oxide quantum dots may be considered to be highly crystalline, allowing the oxide quantum dots and composition to be utilised at ambient conditions without requiring subsequent high temperature calcination. The transparent and conductive oxide quantum dots may find particular application in the large scale coating of a variety of substrates, including silicon, glass, polymers, or composites, etc., and may be used in windscreens, or windows of vehicles (such as automobiles, trains, aeroplanes, etc.) and/or buildings, etc., which require conductive capabilities, such as for the purposes of de-fogging or de-icing.

First claim

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1 - 49 . (canceled) 50 . A method of forming oxide quantum dots, the method comprising: providing precursor materials for forming oxide quantum dots; dissolving the precursor materials in a first liquid, in which nucleation of the oxide quantum dots is promoted; providing a second liquid; adding the second liquid and the first liquid together to form a liquid composite; and controlling growth of the oxide quantum dots in the liquid composite. 51 . The method of claim 50 , wherein the first liquid is an aqueous liquid. 52 . The method of claim 50 , wherein the second liquid is an organic liquid. 53 . The method of claim 50 , wherein the second liquid is immiscible in the first liquid such that the formed liquid composite is multiphasic and comprises a liquid-liquid interface between the first and second liquids, and whereby growth of the oxide quantum dots is controlled at the liquid-liquid interface. 54 . The method of claim 50 , further comprising treating the liquid composite at elevated temperature from about 50° C. to about 300° C. 55 . The method of claim 50 , further comprising treating the liquid composite at elevated pressure from about 1 MPa to about 20 MPa. 56 . The method of claim 54 further comprising, subsequent to treating the liquid composite, extracting the liquid composite for centrifuging the liquid composite to obtain a powder of the oxide quantum dots. 57 . The method of claim 56 , further comprising purifying the powder by washing. 58 . The method of claim 56 , further comprising dispersing the powder in a solvent to form a transparent sol comprising said oxide quantum dots. 59 . The method of claim 58 , further comprising depositing the sol onto a substrate to form a first transparent conductive oxide film. 60 . The method of claim 59 , further comprising depositing the sol onto the substrate to form a second transparent conductive oxide film that is discrete from the first transparent conductive oxide film. 61 . The method of claim 59 , wherein the sol is deposited using ink-jet printing, spray printing, spin-coating, slot die coating, doctor blade coating, screen-printing/coating, gravure printing/coating, engraved roller printing/coating, commabar printing/coating, micro-roller printing/coating, nano-imprint printing, bar spreading, dip coating, contact coating, non-contact coating, or a combination thereof. 62 . A method of forming a transparent conductive oxide film on a substrate, the method comprising: reducing the surface energy of the substrate; providing quantum dots of the transparent conductive oxide; and depositing the quantum dots onto the substrate to form a first transparent conductive oxide film. 63 . The method of claim 62 , further comprising depositing the quantum dots onto the substrate to form a second transparent conductive oxide film that is discrete from the first transparent conductive oxide film. 64 . The method claim 62 , further comprising dispersing the quantum dots in a solvent to form a transparent sol comprising said quantum dots, wherein depositing the quantum dots comprises depositing said transparent sol is deposited onto the substrate to form said transparent conductive oxide film. 65 . A method of forming a transparent conductive oxide film on a substrate, the method comprising: reducing the surface energy of the substrate; providing quantum dots of the transparent conductive oxide; and depositing the quantum dots onto the substrate to form a transparent conductive oxide film, wherein the quantum dots are formed according to the method of claim 50 . 66 . A substrate comprising a transparent conductive oxide film, the transparent conductive film being formed according to the method of claim 50 . 67 . The substrate of claim 66 , wherein the substrate is transparent. 68 . A windscreen, windshield, window, or glass pane comprising a substrate according to claim 66 . 69 . The windscreen, windshield, window, or glass pane of claim 68 , wherein the transparent conductive oxide film is adapted to heat the substrate, or to act as an anti-fog or anti-ice for the substrate, or to de-fog or de-ice the substrate.

Assignees

Inventors

Classifications

  • C09K11/02Primary

    Use of particular materials as binders, particle coatings or suspension media therefor · CPC title

  • Chalcogenides · CPC title

  • the heating conductors being embedded in the transparent or reflecting material {(H05B3/845 takes precedence)} · CPC title

  • Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

  • Manufacture or treatment of nanostructures · CPC title

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What does patent US2018201831A1 cover?
A method of forming oxide quantum dots is disclosed. The method may provide for the highly controlled formation of the oxide quantum dots. A composition comprising oxide quantum dots is also disclosed. The oxide quantum dots may be considered to be highly crystalline, allowing the oxide quantum dots and composition to be utilised at ambient conditions without requiring subsequent high temperatu…
Who is the assignee on this patent?
Newsouth Innovations Pty Ltd, Fuzhou Danlaw Xicheng Electronic Tech Co Ltd
What technology area does this patent fall under?
Primary CPC classification C09K11/02. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Thu Jul 19 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).