Discharge control circuit and power conversion device
US-11979095-B2 · May 7, 2024 · US
US2018191272A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018191272-A1 |
| Application number | US-201715855251-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 27, 2017 |
| Priority date | Dec 29, 2016 |
| Publication date | Jul 5, 2018 |
| Grant date | — |
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A three-phase switching unit including three identical switching cells, each including at least one first electrically-controlled switch in series with at least one second spontaneous conduction switch, wherein the cells are arranged, around a conductive central area of a substrate, with a symmetry of revolution of order 3.
Opening claim text (preview).
What is claimed is: 1 . A three-phase switching unit comprising three identical switching cells, each comprising at least one first electrically-controlled switch in series with at least one second spontaneous conduction switch, wherein the cells are arranged, around a conductive central area of a substrate, with a symmetry of revolution of order 3. 2 . The unit of claim 1 , wherein the spontaneous conduction switches are assembled in the conductive central area with a symmetry of revolution of order 3. 3 . The unit of claim 1 , wherein the conductive central area supports no component. 4 . The unit of claim 1 , wherein the central area also has a symmetry of revolution of order 3. 5 . The unit of claim 1 , wherein the switch(es) of the switching cells are arranged on conductive peripheral areas of the substrate having a symmetry of revolution of order 3. 6 . The unit of claim 5 , wherein the central area and the peripheral areas approximately form a Y. 7 . The unit of claim 1 , wherein the conductive central area has a substantially hexagonal shape. 8 . The unit of claim 1 , wherein said first switch(es) are transistors. 9 . The unit of claim 1 , wherein said spontaneous conduction switch(es) are diodes (D) or MOS transistors. 10 . The unit of claim 1 , wherein each switch is welded to a conductive area by a back-side metallization of a chip made of semiconductor materials, defining an electrode of the switch. 11 . The unit of claim 1 , wherein the conductive central area defines a terminal of electric interconnection of the three cells. 12 . The unit of claim 1 , wherein the substrate is an insulated metal substrate, preferably on ceramic. 13 . A three-phase current inverter, comprising two units of claim 1 . 14 . The current inverter of claim 13 , wherein the cells of the two units are electrically connected two by two, the interconnection nodes defining three phase terminals. 15 . A system comprising: an assembly of photovoltaic panels; and the inverter of claim 13 .
Package configurations · CPC title
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Constructional details, e.g. physical layout, assembly, wiring or busbar connections · CPC title
using semiconductor devices only, e.g. single switched pulse inverters · CPC title
for the simultaneous control of series or parallel connected semiconductor devices · CPC title
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