Photon extraction from ultraviolet light-emitting devices

Patent metadata

Field	Value
Publication number	US-2018190883-A1
Application number	US-201815898347-A
Country	US
Kind code	A1
Filing date	Feb 16, 2018
Priority date	Jul 23, 2014
Publication date	Jul 5, 2018
Grant date	—

Abstract

In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.

First claim

What is claimed is:

1 .- 68 . (canceled)

69 . An illumination device comprising:
an ultraviolet (UV) light-emitting semiconductor die; a rigid lens for extracting light from the light-emitting semiconductor die; and a layer of non-stoichiometric silica material disposed between the rigid lens and the light-emitting semiconductor die, wherein the non-stoichiometric silica material comprises silicon, oxygen, and carbon, a carbon content of the non-stoichiometric silica material being greater than 1 ppm and less than 40 atomic percent.

70 . The illumination device of claim 69 , wherein the carbon content of the non-stoichiometric silica material is greater than 1 atomic percent.

71 . The illumination device of claim 69 , wherein the carbon content of the non-stoichiometric silica material is less than 30 atomic percent.

72 . The illumination device of claim 69 , wherein the carbon content of the non-stoichiometric silica material is less than 20 atomic percent.

73 . The illumination device of claim 69 , wherein the rigid lens is inorganic.

74 . The illumination device of claim 69 , wherein the rigid lens comprises at least one of fused silica, quartz, or sapphire.

75 . The illumination device of claim 69 , further comprising an attachment material disposed around at least a portion of the semiconductor die and around at least a portion of the rigid lens.

76 . The illumination device of claim 75 , wherein the attachment material comprises a resin.

77 . The illumination device of claim 75 , wherein the attachment material is opaque to UV light.

78 . The illumination device of claim 75 , wherein a top surface of the attachment material is disposed above a bottom surface of the rigid lens by no more than 0.5 mm.

79 . The illumination device of claim 75 , wherein a top surface of the attachment material is disposed above a bottom surface of the rigid lens by no more than 0.3 mm.

80 . The illumination device of claim 75 , wherein the attachment material comprises at least one of a mechanical fastener or a clamp.

81 . The illumination device of claim 69 , wherein the rigid lens is at least partially hemispherical.

82 . The illumination device of claim 69 , wherein the rigid lens has a substantially hemispherical portion and a substantially cylindrical portion disposed thereunder.

83 . The illumination device of claim 69 , wherein the rigid lens is a flat plate.

84 . The illumination device of claim 69 , wherein at least a portion of a top surface of the rigid lens is at least one of patterned or textured to enhance light emission therefrom.

85 . An illumination device comprising:
an ultraviolet (UV) light-emitting semiconductor die; a rigid lens for extracting light from the light-emitting semiconductor die; and a layer of encapsulant disposed between the rigid lens and the light-emitting semiconductor die, wherein at least a portion of the layer of encapsulant comprises a non-stoichiometric silica material comprising silicon, oxygen, and carbon, a carbon content of the non-stoichiometric silica material being greater than 1 ppm and less than 40 atomic percent.

86 . The illumination device of claim 85 , further comprising a second layer of encapsulant proximate the semiconductor die, the second layer of encapsulant comprising silicone.

87 . The illumination device of claim 86 , further comprising a barrier material between the semiconductor die and the second layer of encapsulant, the barrier material being opaque to UV light.

88 . The illumination device of claim 87 , wherein the barrier material comprises aluminum, polytetrafluoroethylene, and/or an opaque resin.

Assignees

• Kitamura Ken
• Toita Masato
• Ishii Hironori
• Wang Yuting
• Schowalter Leo J
• Chen Jianfeng
• Grandusky James R

Inventors

• Kitamura Ken
• Toita Masato
• Ishii Hironori
• Wang Yuting
• Schowalter Leo J
• Chen Jianfeng
• Grandusky James R

Classifications

• H01L33/58

  Electricity · mapped topic

• H01L2933/0058

  Electricity · mapped topic

• H01L33/56 Primary

  Electricity · mapped topic

• H01L2933/005

  Electricity · mapped topic

• H01L33/54

  Electricity · mapped topic