Manufacturing method for wavelength conversion device
US-10146045-B2 · Dec 4, 2018 · US
US2018180975A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018180975-A1 |
| Application number | US-201615742539-A |
| Country | US |
| Kind code | A1 |
| Filing date | Sep 2, 2016 |
| Priority date | Sep 15, 2015 |
| Publication date | Jun 28, 2018 |
| Grant date | — |
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Provided is a wavelength conversion member that can reduce strain under stress occurring at the interface between a substrate and a phosphor layer and is therefore less susceptible to breakage during use. The wavelength conversion member 1 comprises a substrate 10 and a phosphor layer 20 bonded on the substrate 10 , the phosphor layer 20 including inorganic phosphor powder 22 dispersed in a glass matrix 21 . In a temperature range of 30° C. to a setting point of the phosphor layer 20 , a relation −10×10 −7 ≤(α 1 −α 2 )≤10×10 −7 (/° C.) is satisfied where α 1 represents a coefficient of thermal expansion of the substrate 10 and α 2 represents a coefficient of thermal expansion of the phosphor layer 20 . The setting point is defined by Tf−(Tf−Tg)/3 (where Tg represents a glass transition point and Tf represents a deformation point).
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1 : A wavelength conversion member comprising a substrate and a phosphor layer bonded on the substrate, the phosphor layer including inorganic phosphor powder dispersed in a glass matrix, wherein the wavelength conversion member satisfies, in a temperature range of 30° C. to a setting point of the phosphor layer, a relation −10×10 −7 ≤(α 1 −α 2 )≤10×10 −7 (/° C.) where α 1 represents a coefficient of thermal expansion of the substrate and α 2 represents a coefficient of thermal expansion of the phosphor layer, and the setting point is defined by Tf−(Tf−Tg)/3 (where Tg represents a glass transition point and Tf represents a deformation point). 2 : The wavelength conversion member according to claim 1 , wherein the substrate is made of oxide ceramic or glass. 3 : The wavelength conversion member according to claim 2 , wherein the oxide ceramic is polycrystalline alumina or single-crystal sapphire. 4 : The wavelength conversion member according to claim 1 , wherein the phosphor layer is fusion bonded to the substrate. 5 : The wavelength conversion member according to claim 1 , wherein the phosphor layer has a thickness of 30 to 300 μm. 6 : The wavelength conversion member according to claim 1 , wherein the inorganic phosphor powder is made of one or more selected from the group consisting of nitride phosphor powder, oxynitride phosphor powder, oxide phosphor powder, sulfide phosphor powder, oxysulfide phosphor powder, halide phosphor powder, and aluminate phosphor powder. 7 : The wavelength conversion member according to claim 1 , wherein a content of the inorganic phosphor powder in the phosphor layer is 30 to 80% by volume. 8 : The wavelength conversion member according to claim 1 , having a wheel shape. 9 : A light-emitting device comprising: the wavelength conversion member according to claim 1 ; and a light source capable of irradiating the phosphor layer of the wavelength conversion member with excitation light. 10 : The light-emitting device according to claim 9 , being used as a light source for a projector. 11 : A method for producing a wavelength conversion member, the method comprising the steps of: preparing a green sheet containing glass powder and inorganic phosphor powder; and applying the green sheet to a substrate and firing the green sheet to form a phosphor layer, wherein the wavelength conversion member satisfies, in a temperature range of 30° C. to a setting point of the phosphor layer, a relation −10×10 −7 ≤(α 1 −α 2 )≤10×10 −7 (/° C.) where α 1 represents a coefficient of thermal expansion of the substrate and α 2 represents a coefficient of thermal expansion of the phosphor layer, and the setting point is defined by Tf−(Tf−Tg)/3 (where Tg represents a glass transition point and Tf represents a deformation point).
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