Nanometer-size silicon material and negative-electrode active material, and production process for the same and electric storage apparatus
US-2015307362-A1 · Oct 29, 2015 · US
US2018179072A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018179072-A1 |
| Application number | US-201615735227-A |
| Country | US |
| Kind code | A1 |
| Filing date | May 20, 2016 |
| Priority date | Jun 12, 2015 |
| Publication date | Jun 28, 2018 |
| Grant date | — |
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Provided is a method for producing a silicon material, the method including: a molten metal preparing step of preparing Ca-x at % Si alloy (42≤x≤75) molten metal; a solidifying step of cooling the molten metal by a rapid cooling device to solidify the Ca-x at % Si alloy; a synthesizing step of reacting the solidified Ca-x at % Si alloy with acid to obtain a layered silicon compound; and a heating step of heating the layered silicon compound at not less than 300° C.
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1 - 6 . (canceled) 7 . A method for producing a silicon material, the method comprising: a molten metal preparing step of preparing Ca-x at % Si alloy (42≤x≤75) molten metal; a solidifying step of cooling the molten metal by a rapid cooling device to solidify the Ca-x at % Si alloy; a synthesizing step of reacting the Ca-x at % Si alloy with acid to obtain a layered silicon compound, the Ca-x at % Si alloy having been solidified without performing grinding by a grinder; and a heating step of heating the layered silicon compound at not less than 300° C. 8 . The method for producing a silicon material according to claim 7 , wherein the rapid cooling device is selected from a cooling device that uses a cooling means of spraying the molten metal on a rotating cooling roll, or a cooling device that uses an atomizing method. 9 . The method for producing a silicon material according to claim 7 , wherein the rapid cooling device is selected from a liquid rapid solidifying device, a rapid cooling thin section producing device, a submerged spinning device, a gas atomizing device, a water atomizing device, a rotary disc device, a rotational electrode method device, or a centrifugal powder producing device. 10 . A method for producing a silicon material, the method comprising: a preparing step of preparing a Ca-x at % Si alloy (42≤x≤75) containing CaSi 2 crystal particles having a mean diameter of 0.1 to 100 μm, without performing grinding by a grinder; a synthesizing step of reacting the Ca-x at % Si alloy with acid to obtain a layered silicon compound; and a heating step of heating the layered silicon compound at not less than 300° C. 11 . The method for producing a silicon material according to claim 10 , wherein the preparing step is the molten metal preparing step of preparing Ca-x at % Si alloy (42≤x≤75) molten metal and a solidifying step of cooling the molten metal by a rapid cooling device to solidify the Ca-x at % Si alloy. 12 . A method for producing a secondary battery, the method comprising the step of producing a secondary battery using a silicon material that is produced by the method for producing a silicon material according to claim 7 .
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