System and method for inrush current control for power sources using non-linear algorithm

US2018175852A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2018175852-A1
Application numberUS-201615385225-A
CountryUS
Kind codeA1
Filing dateDec 20, 2016
Priority dateDec 20, 2016
Publication dateJun 21, 2018
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method includes determining an initial voltage level and duration for an input voltage of a gate of each of multiple transistor devices. Each transistor device receives a power input and controls a current passing through the transistor device. The method also includes controlling the input voltage of the gate of each transistor device according to the initial voltage level and duration. The method further includes receiving real-time feedback including at least one of a present value of the current passing through each transistor device, a present voltage of the power input, and a present value of a capacitor voltage. The method also includes determining, based on the feedback, a subsequent voltage level and duration for the gate of each transistor device. In addition, the method includes controlling the input voltage of the gate of each transistor device according to the determined subsequent voltage level and duration.

First claim

Opening claim text (preview).

What is claimed is: 1 . A method comprising: determining an initial voltage level and an initial duration for an input voltage of a gate of each of multiple transistor devices, each transistor device configured to receive a power input and control a current passing through the transistor device, the current associated with the power input; controlling the input voltage of the gate of each transistor device according to the determined initial voltage level and initial duration; receiving real-time feedback comprising at least one of: a present value of the current passing through each transistor device, a present voltage of the power input, and a present value of a capacitor voltage downstream of the transistor devices; determining, based on the received feedback, a subsequent voltage level and subsequent duration for the gate of each transistor device; and controlling the input voltage of the gate of each transistor device according to the determined subsequent voltage level and subsequent duration. 2 . The method of claim 1 , further comprising: repeating the receiving of the real-time feedback, the determining of the subsequent voltage level and subsequent duration, and the controlling of the input voltage according to the determined subsequent voltage level and subsequent duration. 3 . The method of claim 1 , wherein: the initial voltage level and each subsequent voltage level for the gate of each transistor device is represented over time as a staircase function having a plurality of steps; and an amplitude and duration of each step is independent of amplitudes and durations of other steps. 4 . The method of claim 3 , wherein: the steps of the staircase function go up and down over time; and a down step is associated with a decreased voltage level for the gates. 5 . The method of claim 1 , wherein each transistor device comprises one of: an n-type metal oxide semiconductor field effect transistor (MOSFET), a p-type MOSFET, a Gallium Nitride (GaN) transistor, a Silicon Carbide (SiC) transistor, an insulated-gate bipolar transistor (IGBT), and a thyristor. 6 . The method of claim 1 , wherein the transistor devices comprise two transistors connected in series and sharing a common source, each transistor configured with a different polarity. 7 . The method of claim 1 , wherein: the power input comprises a three-phase alternating current (AC) power; and the transistor devices comprise two transistors for each of the three phases of AC power. 8 . The method of claim 1 , wherein the power input has a voltage of at least 250 volts. 9 . A system comprising: multiple transistor devices each configured to receive a power input and control a current passing through the transistor device, the current associated with the power input; and a controller configured to: determine an initial voltage level and an initial duration for an input voltage of a gate of each transistor device; control the input voltage of the gate of each transistor device according to the determined initial voltage level and initial duration; receive real-time feedback comprising at least one of: a present value of the current passing through each transistor device, a present voltage of the power input, and a present value of a capacitor voltage downstream of the transistor devices; determine, based on the received feedback, a subsequent voltage level and subsequent duration for the gate of each transistor device; and control the input voltage of the gate of each transistor device according to the determined subsequent voltage level and subsequent duration. 10 . The system of claim 9 , wherein the controller is configured to repeatedly receive the real-time feedback, determine the subsequent voltage level and subsequent duration, and control the input voltage according to the determined subsequent voltage level and subsequent duration. 11 . The system of claim 9 , wherein: the initial voltage level and each subsequent voltage level for the gate of each transistor device is represented over time as a staircase function having a plurality of steps; and an amplitude and duration of each step is independent of amplitudes and durations of other steps. 12 . The system of claim 11 , wherein: the steps of the staircase function go up and down over time; and a down step is associated with a decreased voltage level for the gates. 13 . The system of claim 9 , wherein each transistor device comprises one of: an n-type metal oxide semiconductor field effect transistor (MOSFET), a p-type MOSFET, a Gallium Nitride (GaN) transistor, a Silicon Carbide (SiC) transistor, an insulated-gate bipolar transistor (IGBT), and a thyristor. 14 . The system of claim 9 , wherein the transistor devices comprise two transistors connected in series and sharing a common source, each transistor configured with a different polarity. 15 . The system of claim 9 , wherein: the power input comprises a three-phase alternating current (AC) power; and the transistor devices comprise two transistors for each of the three phases of AC power. 16 . The system of claim 9 , wherein the power input has a voltage of at least 250 volts. 17 . A non-transitory computer readable medium containing instructions that, when executed by at least one processing device, cause the at least one processing device to: determine an initial voltage level and an initial duration for an input voltage of a gate of each of multiple transistor devices, each transistor device configured to receive a power input and control a current passing through the transistor device, the current associated with the power input; control the input voltage of the gate of each transistor device according to the determined initial voltage level and initial duration; receive real-time feedback comprising at least one of: a present value of the current passing through each transistor device, a present voltage of the power input, and a present value of a capacitor voltage downstream of the transistor devices; determine, based on the received feedback, a subsequent voltage level and subsequent duration for the gate of each transistor device; and control the input voltage of the gate of each transistor device according to the determined subsequent voltage level and subsequent duration. 18 . The non-transitory computer readable medium of claim 17 , further containing instructions that when executed cause the at least one processing device to: repeat the receiving of the real-time feedback, the determining of the subsequent voltage level and subsequent duration, and the controlling of the input voltage according to the determined subsequent voltage level and subsequent duration. 19 . The non-transitory computer readable medium of claim 17 , wherein: the initial voltage level and each subsequent voltage level for the gate of each transistor device is represented over time as a staircase function having a plurality of steps; and an amplitude and duration of each step is independent of amplitudes and durations of other steps. 20 . The non-transitory computer readable medium of claim 19 , wherein: the steps of the staircase function go up and down over time; and a down step is associated with a decreased voltage level for the gates.

Assignees

Inventors

Classifications

  • Soft switching · CPC title

  • in composite switches · CPC title

  • H03K17/165Primary

    by feedback from the output circuit to the control circuit · CPC title

  • in a symmetrical configuration · CPC title

  • AC switches, i.e. delivering AC power to a load · CPC title

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What does patent US2018175852A1 cover?
A method includes determining an initial voltage level and duration for an input voltage of a gate of each of multiple transistor devices. Each transistor device receives a power input and controls a current passing through the transistor device. The method also includes controlling the input voltage of the gate of each transistor device according to the initial voltage level and duration. The …
Who is the assignee on this patent?
Raytheon Co
What technology area does this patent fall under?
Primary CPC classification H03K17/165. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Jun 21 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).