Compact 3d receiver architecture using silicon germanium thru silicon via technology

Patent metadata

Field	Value
Publication number	US-2018167095-A1
Application number	US-201615378706-A
Country	US
Kind code	A1
Filing date	Dec 14, 2016
Priority date	Dec 14, 2016
Publication date	Jun 14, 2018
Grant date	—

Abstract

A wide bandwidth radio system designed to adapt to various global radio standards and, more particularly, to a system and method incorporate a compact receiver array design to support the demand for increased mobile broadband services using a through-silicon vias to interconnect front-end analog functions in SiGe BiCMOS to backend circuitry in CMOS.

First claim

What is claimed is:

1 . An apparatus comprising:
a first semiconductor layer formed of silicon germanium; a second semiconductor layer formed of silicon; a first device formed on the first semiconductor layer; a second device formed on the second semiconductor layer; and a through silicon via coupling the first device and the second device wherein the through silicon via passes through the first semiconductor layer and the second semiconductor layer.

2 . The apparatus of claim 1 wherein the second device is a digital signal processor.

3 . The apparatus of claim 1 wherein the first device is a delta sigma modulator.

4 . The apparatus of claim 3 wherein the first device is coupled to an antenna for receiving a radio frequency signal.

5 . The apparatus of claim 1 wherein the first device is an analog device.

6 . The apparatus of claim 1 wherein the first semiconductor layer and the second semiconductor layer are formed on a silicon substrate.

7 . The apparatus of claim 1 wherein the apparatus is an integrated circuit coupled to an antenna and a vehicle control system.

8 . An integrated circuit comprising:
a first semiconductor layer formed of silicon germanium; a second semiconductor layer formed of silicon; a first device formed on the first semiconductor layer; a second device formed on the second semiconductor layer; and a through silicon via coupling the first device and the second device wherein the trough silicon via passes through the first semiconductor layer and the second semiconductor layer.

9 . The integrated circuit of claim 8 wherein the second device is a digital signal processor.

10 . The integrated circuit of claim 8 wherein the first device is a delta sigma modulator.

11 . The integrated circuit of claim 8 wherein the first device is an analog device.

12 . The integrated circuit of claim 8 wherein the second device is coupled to a digital baseband processor;

13 . The integrated circuit of claim 8 wherein the first semiconductor layer and the second semiconductor layer are formed on a silicon substrate.

14 . The integrated circuit of claim 8 wherein the apparatus is a software controlled radio coupled to an antenna and a vehicle control system.

15 . A software programmable radio comprising:
a delta sigma modulator formed on a SiGe layer of an integrated circuit; a digital signal processor formed on a silicon layer of the integrated circuit; a through via coupling the delta sigma modulator to the digital signal processor wherein the through via passes through the SiGe layer of the integrated circuit and the silicon layer of the integrated circuit.

16 . The software programmable radio of claim 15 wherein the delta sigma modulator is coupled to an antenna and a vehicle control system.

17 . The software programmable radio of claim 15 where the SiGe layer and the silicon layer are separated by a silicon substrate.

18 . The software programmable radio of claim 15 where the SiGe layer and the silicon layer are formed on either side of a silicon substrate.

19 . The software programmable radio of claim 15 wherein the software programmable radio is formed on an integrated circuit.

20 . The software programmable radio of claim 15 wherein the software programmable radio receives data related to autonomous vehicle control.

Assignees

• Gm Global Tech Operations Llc

Inventors

• Baringer Cynthia D
• Ahmed Mohiuddin
• Kang Jongchan
• Kuan Yen-Cheng
• Li James Chingwei
• Sovero Emilio A
• Talty Timothy J

Classifications

• H10W44/248

  for antennas · CPC title

• H10W20/20

  Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] · CPC title

• H10W44/20

  at high-frequency [HF] or radio frequency [RF] · CPC title

• H10W90/297

  characterised by the through-semiconductor vias [TSVs] in the stacked chips · CPC title

• H10W90/00

  Package configurations · CPC title