Quantum light emitting diode and quantum light emitting device including the same

Patent metadata

Field	Value
Publication number	US-2018166643-A1
Application number	US-201715837991-A
Country	US
Kind code	A1
Filing date	Dec 11, 2017
Priority date	Dec 13, 2016
Publication date	Jun 14, 2018
Grant date	—

Abstract

A quantum light emitting diode comprises a first electrode; a second electrode facing the first electrode; a light-amount enhancing layer between the first and second electrodes and having a structure guiding emitted light toward an emitting side; and an emitting material layer between the light-amount enhancing layer and the second electrode and including a quantum particle at the structure of the light-amount enhancing layer.

First claim

What is claimed is:

1 . A quantum light emitting diode, comprising:
a first electrode; a second electrode facing the first electrode; a light-amount enhancing layer between the first and second electrodes and having a structure guiding emitted light toward an emitting side; and an emitting material layer between the light-amount enhancing layer and the second electrode; and including a quantum particle at the structure of the light-amount enhancing layer.

2 . The quantum light emitting diode according to claim 1 , wherein the structure of the light-amount enhancing layer includes at least one convex portion and one concave portion.

3 . The quantum light emitting diode according to claim 2 , wherein the at least one convex and one concave portions form a prism pattern.

4 . The quantum light emitting diode according to claim 3 , wherein the prism pattern has a base angle in a range of about 10 to 45 degree.

5 . The quantum light emitting diode according to claim 3 , wherein the prism pattern has a ratio of a base side to a pitch to be 1:1 to 2:3.

6 . The quantum light emitting diode according to claim 3 , wherein the prism pattern has a ratio of a height to a base side to be 1:2 to 1:10.

7 . The quantum light emitting diode according to claim 1 , further comprising:
a first charge transporting layer between the first electrode and the light-amount enhancing layer; and a second charge transporting layer between the emitting material layer and the second electrode.

8 . The quantum light emitting diode according to claim 7 , wherein one of the first and second charge transporting layers include an organic material and the other one of the first and second charge transporting layers include an inorganic material.

9 . The quantum light emitting diode according to claim 7 , wherein one of the first and second charge transporting layers is a hole transporting layer, and the other one of the first and second charge transporting layers is an electron transporting layer.

10 . The quantum light emitting diode according to claim 2 , wherein the at least one convex portion protrudes from the first charge transporting layer toward the second electrode.

11 . The quantum light emitting diode according to claim 1 , wherein the quantum particle has a major axis parallel to a length direction of the convex portion.

12 . The quantum light emitting diode according to claim 1 , wherein the light-amount enhancing layer controls an amount of electrons from the first charge transporting layer into the emitting material layer.

13 . The quantum light emitting diode according to claim 1 , wherein the quantum particle includes one of quantum dot and a quantum rod.

14 . A quantum light emitting device, comprising:
a substrate; a quantum light emitting diode over the substrate and including a first electrode, a second electrode facing the first electrode, a light-amount enhancing layer between the first and second electrodes and having a structure guiding emitted light toward an emitting side and an emitting material layer between the light-amount enhancing layer and the second electrode and including a quantum particle at the structure of the light-amount enhancing layer; and a driving element between the substrate and the quantum light emitting diode and connected to the quantum light emitting diode.

15 . The quantum light emitting device according to claims 14 , further comprising:
a hole transporting layer on the anode; and an electron transporting layer on the emitting material layer.

16 . The quantum light emitting device according to claims 15 , wherein one of the hole transporting layer and the electron transporting layer includes an organic material and the other one of the hole transporting layer and the electron transporting layer includes an inorganic material.

17 . A quantum light emitting diode, comprising:
an anode; a cathode facing the anode; a light-amount enhancing layer between the anode and the cathode and having a structure guiding emitted light toward an emitting side; an emitting material layer between the light-amount enhancing layer and the anode; and a quantum particle generating the emitted light and disposed at the light-amount enhancing layer.

18 . The quantum light emitting diode according to claims 17 , further comprising;
a hole transporting layer on the emitting material layer; and an electron transporting layer on the cathode.

19 . The quantum light emitting diode according to claims 17 , wherein one of the hole transporting layer and the electron transporting layer includes an organic material and the other one of the hole transporting layer and the electron transporting layer includes an inorganic material.

Assignees

• Lg Display Co Ltd

Inventors

• Kim Byung-Geol
• Kim Wy-Yong
• Kim Kyu-Nam

Classifications

• H01L51/5056

  Electricity · mapped topic

• H01L51/502 Primary

  Electricity · mapped topic

• H01L51/5275

  Electricity · mapped topic

• H01L27/3262

  Electricity · mapped topic

• H01L51/5072

  Electricity · mapped topic