Robust sensing film for fire gases

Patent metadata

Field	Value
Publication number	US-2018164239-A1
Application number	US-201615377471-A
Country	US
Kind code	A1
Filing date	Dec 13, 2016
Priority date	Dec 13, 2016
Publication date	Jun 14, 2018
Grant date	—

Abstract

A gas sensor that includes a heat source and a gas sensing film. The gas sensing film includes a polycrystalline tungsten trioxide film thermally connected to the heat source and a plurality of islands of gold on a surface of the polycrystalline tungsten trioxide film. The surface of the polycrystalline tungsten trioxide film is exposed between the islands of gold to allow the polycrystalline tungsten trioxide film to sense gas. A first electrode that electrically connected to the polycrystalline tungsten trioxide film and a second electrode is electrically connected to the polycrystalline tungsten trioxide film. The resistance of the polycrystalline tungsten trioxide film between the first electrode and the second electrode changes when the polycrystalline tungsten trioxide film is exposed to a particular type of gas.

First claim

What is claimed is:

1 . A gas sensing film comprising:
a polycrystalline tungsten trioxide film; and a plurality of islands of gold on a surface of the polycrystalline tungsten trioxide film, wherein the surface of the polycrystalline tungsten trioxide film is exposed between the islands of gold to allow the polycrystalline tungsten trioxide film to sense a gas.

2 . The gas sensing film of claim of claim 1 , wherein the polycrystalline tungsten trioxide film has a thickness between 2000 and 5000 Angstroms.

3 . The gas sensing film of claim of claim 1 , wherein the polycrystalline tungsten trioxide film has a thickness of about 4000 Angstroms.

4 . The gas sensing film of claim of claim 1 , wherein at least some of the plurality of islands of gold have a thickness in the range of about 1,000 to 10,000 Angstroms.

5 . The gas sensing film of claim of claim 1 , wherein at least some of the plurality of islands of gold have a perimeter of in the range of about 1 to 10 microns.

6 . A gas sensor comprising:
a heat source; a gas sensing film that includes a polycrystalline tungsten trioxide film thermally connected to the heat source, wherein the gas sensing film includes a plurality of islands of gold on a surface of the polycrystalline tungsten trioxide film, wherein the surface of the polycrystalline tungsten trioxide film is exposed between the islands of gold to allow the polycrystalline tungsten trioxide film to sense gas; a first electrode that is electrically connected to the polycrystalline tungsten trioxide film; and a second electrode that is electrically connected to the polycrystalline tungsten trioxide film, wherein the resistance of the polycrystalline tungsten trioxide film between the first electrode and the second electrode changes when the polycrystalline tungsten trioxide film is exposed to a particular type of gas.

7 . The gas sensor of claim 6 , wherein the polycrystalline tungsten trioxide film is electrically isolated from the heat source.

8 . The gas sensor of claim 6 , wherein the heat source is part of a MEMS structure.

9 . The gas sensor of claim 6 , wherein the resistance of the polycrystalline tungsten trioxide film between the first electrode and the second electrode changes when the polycrystalline tungsten trioxide film is exposed to nitrogen dioxide.

10 . The gas sensor of claim 9 , wherein the resistance of the polycrystalline tungsten trioxide film between the first electrode and the second electrode changes when the polycrystalline tungsten trioxide film is elevated to a temperature between 200 and 400 degrees centigrade.

11 . The gas sensor of claim 6 , wherein the first electrode and the second electrode have an interdigitated configuration.

12 . The gas sensor of claim 6 , wherein the heat source includes a platinum heating element.

13 . The gas sensor of claim 12 , wherein the platinum heating element is part of a MEMS structure.

14 . A method of fabricating a gas sensor comprising:
overlaying a tungsten trioxide film onto a first electrode and a second electrode; overlaying gold onto a surface of the tungsten trioxide film; and sintering the tungsten trioxide film and the gold to form a polycrystalline tungsten trioxide film that includes a plurality of islands of gold on the surface of the polycrystalline tungsten trioxide film.

15 . The method of claim 14 , wherein overlaying a tungsten trioxide film onto a first electrode and a second electrode includes ion beam sputtering the tungsten trioxide film onto the first electrode and the second electrode.

16 . The method of claim 14 , wherein ion beam sputtering the tungsten trioxide film onto the first electrode and the second electrode includes ion beam sputtering in the presence of at least one of xenon, argon or krypton gas.

17 . The method of claim 14 , wherein overlaying gold onto a surface of the tungsten trioxide film include evaporating the gold onto the surface the tungsten trioxide film.

18 . The method of claim 14 , wherein evaporating the gold onto the surface of the tungsten trioxide film includes applying the gold with an electron beam evaporator.

19 . The method of claim 14 , wherein sintering the tungsten trioxide film and the gold to form a polycrystalline tungsten trioxide film that includes a plurality of islands of gold on a surface of the polycrystalline tungsten trioxide film includes heating the tungsten trioxide film and the gold to between 475 to 600 degrees centigrade.

20 . The method of claim 19 , wherein heating the tungsten trioxide film and the gold to between 475 to 600 degrees centigrade includes heating the tungsten trioxide film and the gold to between 475 to 600 degrees centigrade for between 2 and 8 hours.

Assignees

• Honeywell Int Inc

Inventors

• Higashi Robert E
• Newstrom-Peitso Karen M

Classifications

• G01N33/0037

  NOx · CPC title

• G01N27/127

  comprising nanoparticles · CPC title

• H01B1/08

  oxides · CPC title

• C04B2235/3258

  Tungsten oxides, tungstates, or oxide-forming salts thereof · CPC title

• G01N27/128

  Microapparatus · CPC title