Moisture indicating hydrophilic polyurethane
US-9504421-B2 · Nov 29, 2016 · US
Film-forming method
US2018161808A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018161808-A1 |
| Application number | US-201615567589-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 24, 2016 |
| Priority date | Apr 20, 2015 |
| Publication date | Jun 14, 2018 |
| Grant date | — |
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- Title
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Abstract
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A film-forming method for forming a thin film on a substrate includes a contact step, an external force removal step, and a film-forming step. At the contact step (step B), the substrate 30 and a member 31 in contact with one surface of the substrate is stacked, and the substrate 30 and the member 31 in contact with one surface of the substrate are placed under vacuum while an external force is applied in a direction in which the substrate 30 and the member 31 in contact with one surface of the substrate are stacked. At the external force removal step (step C), the external force is removed at atmospheric pressure or under vacuum. At a film-forming step (step E), a thin film is formed on the one surface or the other surface of the substrate 30.
First claim
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1 . A film-forming method for forming a thin film on a substrate, the method comprising: a contact step of stacking the substrate and a member in contact with one surface of the substrate and placing the substrate and the member in contact with one surface of the substrate under vacuum while an external force is applied in a direction in which the substrate and the member in contact with one surface of the substrate are stacked; an external force removal step of removing the external force at atmospheric pressure or under vacuum; and a film-forming step of forming a thin film on the one surface or the other surface of the substrate. 2 . The film-forming method according to claim 1 , wherein the member in contact with one surface of the substrate is a metal mask having an opening, at the contact step, a magnet is arranged on a side of the other surface of the substrate and the external force is applied while the substrate is held between the metal mask and the magnet, at the external force removal step, the external force is removed by separating the magnet and the metal mask, and at the film-forming step, the thin film is formed in a region of the one surface of the substrate, the region corresponding to an area where the opening of the metal mask is provided. 3 . The film-forming method according to claim 2 , wherein at the contact step, a non-magnetic member is further arranged in a stacked manner to contact the other surface of the substrate, and the external force is applied in a direction in which the metal mask, the substrate, and the non-magnetic member are stacked while the substrate and the non-magnetic member are held between the metal mask and the magnet. 4 . The film-forming method according to claim 2 , wherein at the film-forming step, the thin film is formed on the one surface of the substrate by using a chemical vapor deposition method, and the magnet and the metal mask are separated at the external force removal step before the film-forming step. 5 . The film-forming method according to claim 1 , wherein the member in contact with one surface of the substrate is a non-magnetic member made of a non-magnetic material, at the contact step, a magnetic member is further arranged in a stacked manner to contact the other surface of the substrate, a magnet is arranged to contact the non-magnetic member, and the external force is applied in a direction in which the magnetic member, the substrate, and the non-magnetic member are stacked while the substrate and the non-magnetic member are held between the magnet and the magnetic member, at the external force removal step, the external force is removed by separating the magnetic member and the magnet from the substrate and the non-magnetic member, and at the film-forming step, the thin film is formed on the other surface of the substrate.
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Classifications
comprising a chamber adapted to a particular process · CPC title
characterised by the construction of the load-lock chamber · CPC title
Manufacture or treatment · CPC title
Coating on selected surface areas, e.g. using masks · CPC title
Photovoltaic [PV] energy · CPC title
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- What does patent US2018161808A1 cover?
- A film-forming method for forming a thin film on a substrate includes a contact step, an external force removal step, and a film-forming step. At the contact step (step B), the substrate 30 and a member 31 in contact with one surface of the substrate is stacked, and the substrate 30 and the member 31 in contact with one surface of the substrate are placed under vacuum while an external …
- Who is the assignee on this patent?
- Sharp Kk
- What technology area does this patent fall under?
- Primary CPC classification B05D3/0493. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Thu Jun 14 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).