Photoelectric conversion element, solid-state imaging device, and electronic apparatus

Patent metadata

Field	Value
Publication number	US-2018159059-A1
Application number	US-201615574592-A
Country	US
Kind code	A1
Filing date	May 19, 2016
Priority date	May 28, 2015
Publication date	Jun 7, 2018
Grant date	—

Abstract

A photoelectric conversion element according to an embodiment of the disclosure includes a first electrode and a second electrode, and an organic semiconductor layer. The first electrode and the second electrode are disposed to face each other. The organic semiconductor layer is provided between the first electrode and the second electrode, and contains a fullerene derivative modified by a substituent having an absorbance smaller than that of a fullerene.

First claim

1 . A photoelectric conversion element comprising:
a first electrode and a second electrode that are disposed to face each other; and an organic semiconductor layer that is provided between the first electrode and the second electrode, and contains a fullerene derivative modified by a substituent having an absorbance smaller than that of a fullerene in a visible range.

2 . The photoelectric conversion element according to claim 1 , wherein the fullerene derivative is represented by formula (1):

where R denotes, each independently, a hydrogen atom, a halogen atom, a linear, branched or cyclic alkyl group having carbon atoms ranging from 1 to 12, a phenyl group, a group having a linear or condensed aromatic compound, a group having a halide, a partial fluoroalkyl group, a perfluoroalkyl group, a silyl alkyl group, a silyl alkoxy group, an aryl silyl group, an arylsulfanyl group, an alkylsulfanyl group, an arylsulfonyl group, an alkylsulfonyl group, an aryl sulfide group, an alkyl sulfide group, an amino group, an alkylamino group, an arylamino group, a hydroxy group, an alkoxy group, an acylamino group, an acyloxy group, a carbonyl group, a carboxy group, a carboxoamido group, a carboalkoxy group, an acyl group, a sulfonyl group, a cyano group, a nitro group, a group having a chalcogenide, a phosphine group, a phosphonic group, or a derivative thereof, provided that n is an integer of 2 or more.

3 . The photoelectric conversion element according to claim 1 , wherein the number of the substituent that modifies the fullerene derivative ranges from 2 to 48.

4 . The photoelectric conversion element according to claim 1 , wherein the organic semiconductor layer includes an organic semiconductor that absorbs light of a selective wavelength region.

5 . The photoelectric conversion element according to claim 1 , wherein the organic semiconductor layer has a photoelectric conversion function.

6 . A solid-state imaging device provided with pixels each having one or a plurality of organic photoelectric conversion sections, the organic photoelectric conversion section comprising:
a first electrode and a second electrode that are disposed to face each other; and an organic semiconductor layer that is provided between the first electrode and the second electrode, and contains a fullerene derivative modified by a substituent having an absorbance smaller than that of a fullerene in a visible range.

7 . The solid-state imaging device according to claim 6 , wherein, in each of the pixels, the one or plurality of organic photoelectric conversion sections and one or a plurality of inorganic photoelectric conversion sections are stacked, the one or plurality of inorganic photoelectric conversion sections performing photoelectric conversion of a wavelength region different from that of the organic photoelectric conversion section.

8 . The solid-state imaging device according to claim 7 , wherein
the inorganic photoelectric conversion section is formed to be embedded inside a semiconductor substrate, and the organic photoelectric conversion section is formed on first surface side of the semiconductor substrate.

9 . The solid-state imaging device according to claim 8 , wherein a multi-layer wiring layer is formed on second surface side of the semiconductor substrate.

10 . The solid-state imaging device according to claim 8 , wherein
the organic photoelectric conversion section performs the photoelectric conversion of green light, and the inorganic photoelectric conversion section that performs the photoelectric conversion of blue light and the inorganic photoelectric conversion section that performs the photoelectric conversion of red light are stacked inside the semiconductor substrate.

11 . An electronic apparatus with a solid-state imaging device, the solid-state imaging device being provided with pixels each having one or a plurality of organic photoelectric conversion sections, the organic photoelectric conversion section comprising:
a first electrode and a second electrode that are disposed to face each other; and an organic semiconductor layer that is provided between the first electrode and the second electrode, and contains a fullerene derivative modified by a substituent having an absorbance smaller than that of a fullerene in a visible range.

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Takemura Ichiro
• Negishi Yuki
• Hasegawa Yuta

Classifications

• H04N23/10

  for generating image signals from different wavelengths · CPC title

• H04N25/70

  SSIS architectures; Circuits associated therewith · CPC title

• H01L51/441 Primary

  Electricity · mapped topic

• H01L27/14609

  Electricity · mapped topic

• H01L31/022425

  Electricity · mapped topic