Method for manufacturing display device
US-2024393634-A1 · Nov 28, 2024 · US
US2018157087A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018157087-A1 |
| Application number | US-201815867513-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 10, 2018 |
| Priority date | Oct 5, 2015 |
| Publication date | Jun 7, 2018 |
| Grant date | — |
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A display device including a substrate and an electrode positioned over the substrate. The electrode includes a first conductive layer, a second conductive layer disposed on the first conductive layer, and a third conductive layer disposed on the second conductive layer. The second conductive layer includes Ag and an alloy element, and the alloy element has a smaller atomic radius than Ag. A thickness of the second conductive layer is in a range of 20 Å to 60 Å. The second conductive layer has a transmittance of 85% or more in the range of 20 Å to 60 Å. The content of the alloy element of the second conductive layer is in a range of 2 wt % to 35 wt %.
Opening claim text (preview).
What is claimed is: 1 . A display device comprising: a substrate; and an electrode positioned over the substrate, wherein: a voltage is applied to the electrode to display an image; the electrode comprises a first conductive layer, a second conductive layer disposed on the first conductive layer, and a third conductive layer disposed on the second conductive layer; the second conductive layer comprises Ag and an alloy element; the alloy element has a smaller atomic radius than Ag; a thickness of the second conductive layer is in a range of 20 Å to 60 Å; the second conductive layer has a transmittance of 85% or more in the range of 20 Å to 60 Å; the alloy element comprises at least one selected from the group consisting of zinc (Zn), nickel (Ni), cobalt (Co), gallium (Ga), germanium (Ge), antimony (Sb), manganese (Mn), tungsten (W), and molybdenum (Mo); and is the content of the alloy element of the second conductive layer is in a range of 2 wt % to 35 wt %. 2 . The display device of claim 1 , wherein the thickness of the second conductive layer is in a range of 30 Å to 50 Å. 3 . The display device of claim 1 , wherein the second conductive layer further comprises indium (In). 4 . The display device of claim 1 , wherein the first conductive layer and the third conductive layer comprise at least one selected from the group consisting of ITO, IZO, and AZO. 5 . The display device of claim 4 , wherein a thickness of each of the first conductive layer and the third conductive layer is in a range of 20 Å to 70 Å. 6 . The display device of claim 1 , wherein light transmittance of the electrode is 80% or more. 7 . The display device of claim 1 , further comprising a thin film transistor positioned over the first substrate and a planarization layer covering the thin film transistor; wherein the electrode is positioned over the planarization layer. 8 . The display device of claim 7 , wherein the thin film transistor comprises an active layer, a gate electrode, a source electrode, and a drain electrode.
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