Array substrate and manufacturing method thereof
US-12185597-B2 · Dec 31, 2024 · US
US2018151602A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018151602-A1 |
| Application number | US-201815871075-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 15, 2018 |
| Priority date | Aug 1, 2014 |
| Publication date | May 31, 2018 |
| Grant date | — |
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A display device including a substrate including a display area and a non-display area, a common electrode line in the non-display area, and a protective layer coating at least a part of an end portion of the common electrode line.
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What is claimed is: 1 . A method for manufacturing a display device, the method comprising: forming a display area and a non-display area on a substrate; forming a common electrode line in the non-display area on the substrate; and forming a protective layer covering at least a part of an end portion of the common electrode line. 2 . The method of claim 1 , wherein the forming of the display area comprises forming a thin film transistor on the substrate, and the forming of the thin film transistor comprises: forming a semiconductive layer; forming a gate electrode overlapping the semiconductive layer at least in part; forming a source electrode coupled to the semiconductive layer; and forming a drain electrode separated from the source electrode and coupled to the semiconductive layer, wherein the forming of the source and drain electrodes is performed utilizing substantially the same process as the forming of the common electrode line. 3 . The method of claim 2 , further comprising forming a planarization layer on the thin film transistor after the forming of the thin film transistor, wherein the forming of the planarization layer is performed utilizing substantially the same process as the forming of the protective layer. 4 . The method of claim 3 , wherein the forming of the planarization layer comprises: forming a material layer for the planarization layer by applying a planarization layer-forming material on the thin film transistor; selectively exposing the material layer for the planarization layer to light; and developing the exposed material layer for the planarization layer. 5 . The method of claim 1 , wherein the forming of the display area comprises forming one or more display elements, wherein the forming of the display element comprises: forming a pixel electrode on the substrate; forming a light emission layer on the pixel electrode; and forming a common electrode on the light emission layer, wherein the common electrode is coupled to the common electrode line. 6 . The method of claim 5 , wherein the forming of the pixel electrode comprises forming a common electrode coupling portion coupled to the common electrode line. 7 . The method of claim 5 , further comprising forming a pixel defining layer on the substrate after the forming of the pixel electrode and before the forming of the light emission layer. 8 . The method of claim 1 , wherein the protective layer covers one side-edge of the common electrode line. 9 . The method of claim 1 , wherein the forming of the protective layer comprises forming a first protective layer and a second protective layer separated from each other. 10 . The method of claim 9 , wherein the distance between the first and the second protective layers is in a range of about 20 μm to about 2000 μm. 11 . The method of claim 9 , wherein the forming of the protective layer comprises forming a first protective layer covering at least a part of the end portion of the common electrode line, and forming a second protective layer not covering the end portion of the common electrode line, the first and second protective layers being alternately arranged. 12 . The method of claim 1 , wherein the protective layer has a width in a range of about 20 μm to about 200 μm.
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