Display device and method for manufacturing the same

US2018151602A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2018151602-A1
Application numberUS-201815871075-A
CountryUS
Kind codeA1
Filing dateJan 15, 2018
Priority dateAug 1, 2014
Publication dateMay 31, 2018
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A display device including a substrate including a display area and a non-display area, a common electrode line in the non-display area, and a protective layer coating at least a part of an end portion of the common electrode line.

First claim

Opening claim text (preview).

What is claimed is: 1 . A method for manufacturing a display device, the method comprising: forming a display area and a non-display area on a substrate; forming a common electrode line in the non-display area on the substrate; and forming a protective layer covering at least a part of an end portion of the common electrode line. 2 . The method of claim 1 , wherein the forming of the display area comprises forming a thin film transistor on the substrate, and the forming of the thin film transistor comprises: forming a semiconductive layer; forming a gate electrode overlapping the semiconductive layer at least in part; forming a source electrode coupled to the semiconductive layer; and forming a drain electrode separated from the source electrode and coupled to the semiconductive layer, wherein the forming of the source and drain electrodes is performed utilizing substantially the same process as the forming of the common electrode line. 3 . The method of claim 2 , further comprising forming a planarization layer on the thin film transistor after the forming of the thin film transistor, wherein the forming of the planarization layer is performed utilizing substantially the same process as the forming of the protective layer. 4 . The method of claim 3 , wherein the forming of the planarization layer comprises: forming a material layer for the planarization layer by applying a planarization layer-forming material on the thin film transistor; selectively exposing the material layer for the planarization layer to light; and developing the exposed material layer for the planarization layer. 5 . The method of claim 1 , wherein the forming of the display area comprises forming one or more display elements, wherein the forming of the display element comprises: forming a pixel electrode on the substrate; forming a light emission layer on the pixel electrode; and forming a common electrode on the light emission layer, wherein the common electrode is coupled to the common electrode line. 6 . The method of claim 5 , wherein the forming of the pixel electrode comprises forming a common electrode coupling portion coupled to the common electrode line. 7 . The method of claim 5 , further comprising forming a pixel defining layer on the substrate after the forming of the pixel electrode and before the forming of the light emission layer. 8 . The method of claim 1 , wherein the protective layer covers one side-edge of the common electrode line. 9 . The method of claim 1 , wherein the forming of the protective layer comprises forming a first protective layer and a second protective layer separated from each other. 10 . The method of claim 9 , wherein the distance between the first and the second protective layers is in a range of about 20 μm to about 2000 μm. 11 . The method of claim 9 , wherein the forming of the protective layer comprises forming a first protective layer covering at least a part of the end portion of the common electrode line, and forming a second protective layer not covering the end portion of the common electrode line, the first and second protective layers being alternately arranged. 12 . The method of claim 1 , wherein the protective layer has a width in a range of about 20 μm to about 200 μm.

Assignees

Inventors

Classifications

  • H10D86/60Primary

    wherein the TFTs are in active matrices · CPC title

  • of the metal-insulator-metal type · CPC title

  • H10D86/451Primary

    characterised by the compositions or shapes of the interlayer dielectrics · CPC title

  • H10D86/441Primary

    Interconnections, e.g. scanning lines · CPC title

  • Electricity · mapped topic

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What does patent US2018151602A1 cover?
A display device including a substrate including a display area and a non-display area, a common electrode line in the non-display area, and a protective layer coating at least a part of an end portion of the common electrode line.
Who is the assignee on this patent?
Samsung Display Co Ltd
What technology area does this patent fall under?
Primary CPC classification H10D86/60. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu May 31 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).