Light-emitting device and display device

Patent metadata

Field	Value
Publication number	US-2018130863-A1
Application number	US-201715706184-A
Country	US
Kind code	A1
Filing date	Sep 15, 2017
Priority date	Aug 18, 2000
Publication date	May 10, 2018
Grant date	—

Abstract

Although an organic resin substrate is highly effective at reducing the weight and improving the shock resistance of a display device, it is required to improve the moisture resistance of the organic resin substrate for the sake of maintaining the reliability of an EL element. Hard carbon films are formed to cover a surface of the organic resin substrate and outer surfaces of a sealing member. Typically, DLC (Diamond Like Carbon) films are used as the carbon films. The DLC films have a construction where carbon atoms are bonded into an SP 3 bond in terms of a short-distance order, although the films have an amorphous construction from a macroscopic viewpoint. The DLC films contain 95 to 70 atomic % carbon and 5 to 30 atomic % hydrogen, so that the DLC films are very hard and minute and have a superior gas barrier property and insulation performance.

First claim

1 . (canceled)

2 . A method for forming an electronic device, the method comprising steps of:
forming a glass substrate; forming a first polyimide layer over the glass substrate; forming a second polyimide layer over the first polyimide layer; forming a transistor over the second polyimide layer; forming a light-emitting element over the transistor; and performing a linear laser irradiation from the glass substrate side after the step of forming the light-emitting element; and peeling off the glass substrate.

3 . A method for forming an electronic device, the method comprising steps of:
forming a glass substrate; forming a first polyimide layer over the glass substrate; forming a second polyimide layer over the first polyimide layer; forming a transistor over the second polyimide layer; forming a light-emitting element by forming an anode over the transistor, an organic compound layer over the anode, and a cathode comprising a metal film over the organic compound layer, wherein light from the light-emitting element is emitted to an upper side of the light-emitting element; performing a linear laser irradiation from the glass substrate side after the step of forming the light-emitting element; and peeling off the glass substrate.

4 . A method for forming an electronic device, the method comprising steps of:
forming a glass substrate; forming a first polyimide layer over the glass substrate; forming a second polyimide layer over the first polyimide layer; forming a transistor over the second polyimide layer; forming a light-emitting element by forming an anode over the transistor, an organic compound layer over the anode, and a cathode comprising a metal film over the organic compound layer, wherein light from the light-emitting element is emitted to an upper side of the light-emitting element; performing a linear laser irradiation from the glass substrate side after the step of forming the light-emitting element; and peeling off the glass substrate such that a light-emitting display device including the transistor and the light-emitting element is formed; bending the light-emitting display device; and covering the light-emitting display device with a housing including a curved outer surface, wherein the light-emitting display device is bent along the curved outer surface of the housing.

5 . The method according to claim 2 ,
wherein the first polyimide layer is a bonding layer, and wherein the second polyimide layer is an element substrate of the light emitting display device.

6 . The method according to claim 2 , further comprising a step of forming a third polyimide layer as a sealing substrate over the light-emitting element.

7 . The method according to claim 2 , wherein the first polyimide layer is vaporized by the peeling step.

8 . The method according to claim 2 , wherein the transistor comprises a semiconductor layer comprising polysilicon.

9 . The method according to claim 2 , further comprising a step of forming a carbon film over the first polyimide layer before the step of forming the second polyimide layer.

10 . The method according to claim 2 , further comprising a step of forming a touch sensor.

11 . The method according to claim 3 ,
wherein the first polyimide layer is a bonding layer, and wherein the second polyimide layer is an element substrate of the light emitting display device.

12 . The method according to claim 3 , further comprising a step of forming a third polyimide layer as a sealing substrate over the light-emitting element.

13 . The method according to claim 3 , wherein the first polyimide layer is vaporized by the peeling step.

14 . The method according to claim 3 , wherein the transistor comprises a semiconductor layer comprising polysilicon.

15 . The method according to claim 3 , further comprising a step of forming a carbon film over the first polyimide layer before the step of forming the second polyimide layer.

16 . The method according to claim 3 , further comprising a step of forming a touch sensor.

17 . The method according to claim 3 , wherein the metal film comprises magnesium and silver.

18 . The method according to claim 4 ,
wherein the first polyimide layer is a bonding layer, and wherein the second polyimide layer is an element substrate of the light emitting display device.

19 . The method according to claim 4 , further comprising a step of forming a third polyimide layer as a sealing substrate over the light-emitting element.

20 . The method according to claim 4 , wherein the first polyimide layer is vaporized by the peeling step.

21 . The method according to claim 4 , wherein the transistor comprises a semiconductor layer comprising polysilicon.

22 . The method according to claim 4 , further comprising a step of forming a carbon film over the first polyimide layer before the step of forming the second polyimide layer.

23 . The method according to claim 4 , further comprising a step of forming a touch sensor.

24 . The method according to claim 4 , wherein the metal film comprises magnesium and silver.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Arai Yasuyuki

Classifications

• H01L27/1214

  Electricity · mapped topic

• H01L51/5246

  Electricity · mapped topic

• H01L27/3246

  Electricity · mapped topic

• H01L27/3244

  Electricity · mapped topic

• H01L51/5237

  Electricity · mapped topic