Semiconductor switch control device

US2018123584A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2018123584-A1
Application numberUS-201715725839-A
CountryUS
Kind codeA1
Filing dateOct 5, 2017
Priority dateOct 28, 2016
Publication dateMay 3, 2018
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A semiconductor switch control device includes a bidirectional shutoff circuit that transmits or shuts off a current flowing bidirectionally between a high-voltage battery and a high-voltage load, a resistor that detects a voltage of the bidirectional shutoff circuit, a first voltage detector that detects a voltage applied to the resistor, and a controller configured to determine malfunction of the bidirectional shutoff circuit, based on a first detected voltage detected by the first voltage detector. The bidirectional shutoff circuit includes a first FET and a second FET including respective source terminals connected in series, and a third FET and a fourth FET including respective source terminals connected in series. The resistor includes one end connected between the source terminals of the first FET and the second FET, and the other end connected between the source terminals of the third FET and the fourth FET.

First claim

Opening claim text (preview).

What is claimed is: 1 . A semiconductor switch control device comprising: a semiconductor switch module installed between a power supply and a load, and that transmits or shuts off a current flowing bidirectionally between the power supply and the load; a resistor that detects a voltage of the semiconductor switch module; a first voltage detector that detects a voltage applied to the resistor; and a controller configured to determine malfunction of the semiconductor switch module, based on a first detected voltage detected by the first voltage detector, wherein the semiconductor switch module includes a first semiconductor switch module, and a second semiconductor switch module connected in parallel with the first semiconductor switch module, the first semiconductor switch module includes a first forward switch including a body diode disposed in a forward direction serving as a direction in which the current flows, and a first reverse switch disposed adjacent to the first forward switch, and including a body diode disposed in a reverse direction reverse to the forward direction, the first forward switch and the first reverse switch include respective source terminals connected in series, and respective drain terminals, one of the drain terminals being connected with the power supply, and the other of the drain terminals being connected with the load, the second semiconductor switch module includes a second forward switch including a body diode disposed in the forward direction, and a second reverse switch disposed adjacent to the second forward switch, and including a body diode disposed in the reverse direction, the second forward switch and the second reverse switch include respective source terminals connected in series, and respective drain terminals, one of the drain terminals being connected with the power supply, and the other of the drain terminals being connected with the load, and the resistor includes one end connected between the source terminals of the first forward switch and the first reverse switch, and the other end connected between the source terminals of the second forward switch and the second reverse switch. 2 . A semiconductor switch control device comprising: a semiconductor switch module installed between a power supply and a load, and that transmits or shuts off a current flowing bidirectionally between the power supply and the load; a resistor that detects a voltage of the semiconductor switch module; a first voltage detector that detects a voltage applied to the resistor; and a controller configured to determine malfunction of the semiconductor switch module, based on a first detected voltage detected by the first voltage detector, wherein the semiconductor switch module includes a first semiconductor switch module, and a second semiconductor switch module connected in parallel with the first semiconductor switch module, the first semiconductor switch module includes a first forward switch including a body diode disposed in a forward direction serving as a direction in which the current flows, and a first reverse switch disposed adjacent to the first forward switch, and including a body diode disposed in a reverse direction reverse to the forward direction, the first forward switch and the first reverse switch include respective drain terminals connected in series, and respective source terminals, one of the source terminals being connected with the power supply, and the other of the source terminals being connected with the load, the second semiconductor switch module includes a second forward switch including a body diode disposed in the forward direction, and a second reverse switch disposed adjacent to the second forward switch, and including a body diode disposed in the reverse direction, the second forward switch and the second reverse switch include respective drain terminals connected in series, and respective source terminals, one of the source terminals being connected with the power supply, and the other of the source terminals being connected with the load, and the resistor includes one end connected between the drain terminals of the first forward switch and the first reverse switch, and the other end connected between the drain terminals of the second forward switch and the second reverse switch. 3 . The semiconductor switch control device according to claim 1 , wherein the controller determines that any of the first forward switch, the first reverse switch, the second forward switch, and the second reverse switch incurs an OFF-state malfunction in which the determined switch is in an OFF state, based on a shift amount between the first detected voltage and a predetermined first reference voltage, when an instruction is issued to turn on all of the first forward switch, the first reverse switch, the second forward switch, and the second reverse switch. 4 . The semiconductor switch control device according to claim 2 , wherein the controller determines that any of the first forward switch, the first reverse switch, the second forward switch, and the second reverse switch incurs an OFF-state malfunction in which the determined switch is in an OFF state, based on a shift amount between the first detected voltage and a predetermined first reference voltage, when an instruction is issued to turn on all of the first forward switch, the first reverse switch, the second forward switch, and the second reverse switch. 5 . The semiconductor switch control device according to claim 3 , wherein the controller determines that one of the first forward switch and the second reverse switch incurs the OFF-state malfunction, when the shift amount between the first detected voltage and the first reference voltage is a positive voltage, and the controller determines that one of the first reverse switch and the second forward switch incurs the OFF-state malfunction, when the shift amount between the first detected voltage and the first reference voltage is a negative voltage. 6 . The semiconductor switch control device according to claim 4 , wherein the controller determines that one of the first forward switch and the second reverse switch incurs the OFF-state malfunction, when the shift amount between the first detected voltage and the first reference voltage is a positive voltage, and the controller determines that one of the first reverse switch and the second forward switch incurs the OFF-state malfunction, when the shift amount between the first detected voltage and the first reference voltage is a negative voltage. 7 . The semiconductor switch control device according to claim 1 , further comprising: a second voltage detector that detects a voltage applied to the load, wherein the controller determines malfunction of the semiconductor switch module, based on a second detected voltage detected by the second voltage detector. 8 . The semiconductor switch control device according to claim 2 , further comprising: a second voltage detector that detects a voltage applied to the load, wherein the controller determines malfunction of the semiconductor switch module, based on a second detected voltage detected by the second voltage detector. 9 . The semiconductor switch control device according to claim 3 , further comprising: a second voltage detector that detects a voltage applied to the load, wherein the controller determines malfunction of the semiconductor switch module, based on a second detected voltage detected by the second voltage detector. 10 . The semiconductor switch control device according to claim 4 , further comprising: a second voltage detector to detect a voltage applied to the load, wherein

Assignees

Inventors

Classifications

  • Cutting off the power supply under fault conditions (protective devices and circuit arrangements in general H01H; H02H) · CPC title

  • relating to control modules · CPC title

  • H03K17/26Primary

    Modifications for temporary blocking after receipt of control pulses · CPC title

  • H03K17/567Primary

    Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT · CPC title

  • Modifications for indicating state of switch · CPC title

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What does patent US2018123584A1 cover?
A semiconductor switch control device includes a bidirectional shutoff circuit that transmits or shuts off a current flowing bidirectionally between a high-voltage battery and a high-voltage load, a resistor that detects a voltage of the bidirectional shutoff circuit, a first voltage detector that detects a voltage applied to the resistor, and a controller configured to determine malfunction of…
Who is the assignee on this patent?
Yazaki Corp
What technology area does this patent fall under?
Primary CPC classification H03K17/26. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu May 03 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).