Organic light-emitting device
US-2015014645-A1 · Jan 15, 2015 · US
US2018102493A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018102493-A1 |
| Application number | US-201715724374-A |
| Country | US |
| Kind code | A1 |
| Filing date | Oct 4, 2017 |
| Priority date | Oct 10, 2016 |
| Publication date | Apr 12, 2018 |
| Grant date | — |
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A quantum rod panel includes a first substrate and a second substrate facing each other, a pixel electrode and a common electrode over the first substrate and spaced apart from each other, and a quantum rod layer between the pixel electrode and the common electrode and including quantum rods and metal particles.
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What is claimed is: 1 . A quantum rod panel comprising: a first substrate and a second substrate facing each other; a pixel electrode and a common electrode over the first substrate and spaced apart from each other; and a quantum rod layer between the pixel electrode and the common electrode and including quantum rods and metal particles. 2 . The quantum rod panel of claim 1 , wherein the metal particles are insulator-coated metal particles, each of the insulator-coated metal particles being surrounded by an insulating material. 3 . The quantum rod panel of claim 2 , wherein the insulating material has a light-transmitting property. 4 . The quantum rod panel of claim 2 , wherein the insulating material includes one of silica, silicon oxide, and silicon nitride. 5 . The quantum rod panel of claim 2 , wherein the insulator-coated metal particles have a content of approximately 1 to 15 wt % with respect to the quantum rods. 6 . The quantum rod panel of claim 1 , wherein the metal particles include one of gold, silver, titanium and aluminum. 7 . The quantum rod panel of claim 1 , wherein each of the pixel electrode and the common electrode includes: a lower layer of a transparent conductive material, and an upper layer of a reflective conductive material. 8 . The quantum rod panel of claim 7 , wherein the lower layer has a thickness greater than a thickness of the upper layer. 9 . The quantum rod panel of claim 1 , wherein long axes of the quantum rods are perpendicular to an extension direction of the pixel electrode. 10 . The quantum rod panel of claim 1 , further comprising a thin film transistor over the first substrate and connected to the pixel electrode. 11 . A quantum rod display device comprising: a quantum rod panel including: a first substrate and a second substrate facing each other, a pixel electrode and a common electrode over the first substrate and spaced apart from each other, and a quantum rod layer between the pixel electrode and the common electrode and including quantum rods and metal particles; and a backlight unit under the quantum rod panel. 12 . The quantum rod display device of claim 11 , wherein the metal particles are insulator-coated metal particles, each of the insulator-coated metal particles being surrounded by an insulating material. 13 . The quantum rod display device of claim 12 , wherein the insulating material has a light-transmitting property. 14 . The quantum rod display device of claim 12 , wherein the insulating material includes one of silica, silicon oxide, and silicon nitride. 15 . The quantum rod display device of claim 12 , wherein the insulator-coated metal particles have a content of approximately 1 to 15 wt % with respect to the quantum rods. 16 . The quantum rod display device of claim 11 , wherein the metal particles include one of gold, silver, titanium and aluminum. 17 . The quantum rod display device of claim 11 , wherein each of the pixel electrode and the common electrode includes: a lower layer of a transparent conductive material, and an upper layer of a reflective conductive material. 18 . The quantum rod display device of claim 17 , wherein the lower layer has a thickness greater than a thickness of the upper layer. 19 . The quantum rod display device of claim 11 , wherein long axes of the quantum rods are perpendicular to an extension direction of the pixel electrode. 20 . The quantum rod display device of claim 11 , wherein the quantum rod panel further includes a thin film transistor over the first substrate and connected to the pixel electrode.
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