Solution-Phase Inclusion of Silver Into Chalcogenide Semiconductor Inks

Patent metadata

Field	Value
Publication number	US-2018102455-A1
Application number	US-201615287087-A
Country	US
Kind code	A1
Filing date	Oct 6, 2016
Priority date	Oct 6, 2016
Publication date	Apr 12, 2018
Grant date	—

Abstract

Silver-containing absorbers for photovoltaic devices and techniques for fabrication thereof are provided. In one aspect, a method of forming an ink includes: mixing a silver halide and a solvent to form a first solution; mixing a metal, sulfur, and the solvent to form a second solution; combining the first solution and the second solution to form a precursor solution; and adding constituent components for an absorber material to the precursor solution to form the ink. Methods of forming an absorber film, a photovoltaic device, and the resulting photovoltaic device are also provided.

First claim

What is claimed is:

1 . A method of forming an ink, the method comprising:
mixing a silver halide and a solvent to form a first solution; mixing a metal, sulfur, and the solvent to form a second solution; combining the first solution and the second solution to form a precursor solution; and adding constituent components for an absorber material to the precursor solution to form the ink.

2 . The method of claim 1 , wherein the silver halide is selected from the group consisting of: silver chloride, silver bromide, and silver iodide.

3 . The method of claim 1 , wherein the solvent is selected from the group consisting of: hydrazine, and a thiol-amine solvent.

4 . The method of claim 1 , wherein the solvent comprises 11-Amino-1-undecanethiol hydrochloride.

5 . The method of claim 1 , wherein the metal is selected from the group consisting of: copper, indium, gallium, zinc, and tin.

6 . The method of claim 1 , wherein the metal comprises copper.

7 . The method of claim 1 , further comprising:
cooling the solvent to a temperature of from about −5° C. to about −2° C., and ranges therebetween prior to forming the first and second solutions.

8 . The method of claim 1 , wherein the constituent components for the absorber material comprise zinc, tin, and at least one of sulfur and selenium.

9 . The method of claim 1 , wherein the constituent components for the absorber material comprise indium, gallium, and at least one of sulfur and selenium.

10 . The method of claim 1 , wherein the constituent components for the absorber material comprise indium and selenium.

11 . A method of forming an absorber film, the method comprising:
forming an ink by: i) mixing a silver halide and a solvent to form a first solution, ii) mixing a metal, sulfur, and the solvent to form a second solution, iii) combining the first solution and the second solution to form a precursor solution, iv) adding constituent components for an absorber material to the precursor solution to form the ink; depositing the ink onto a substrate to form the absorber film on the substrate; and annealing the absorber film.

12 . The method of claim 11 , wherein the silver halide is selected from the group consisting of: silver chloride, silver bromide, and silver iodide.

13 . The method of claim 11 , wherein the metal is selected from the group consisting of: copper, indium, gallium, zinc, and tin.

14 . The method of claim 11 , wherein the constituent components for the absorber material comprise zinc, tin, and at least one of sulfur and selenium.

15 . The method of claim 11 , wherein the constituent components for the absorber material comprise indium, gallium, and at least one of sulfur and selenium.

16 . The method of claim 11 , wherein the constituent components for the absorber material comprise indium and selenium.

17 . The method of claim 11 , wherein the absorber film is annealed at a temperature of from about 400° C. to about 800° C., and ranges therebetween, for a duration of from about 100 seconds to about 120 seconds, and ranges therebetween.

18 . A method of forming a photovoltaic device, the method comprising:
forming an electrically conductive layer on a substrate; forming an absorber layer on the electrically conductive layer by: i) mixing a silver halide and a solvent to form a first solution, ii) mixing a metal, sulfur, and the solvent to form a second solution, iii) combining the first solution and the second solution to form a precursor solution, iv) adding constituent components for an absorber material to the precursor solution to form an ink, v) depositing the ink onto the electrically conductive layer to form the absorber layer on the electrically conductive layer; annealing the absorber layer; forming a buffer layer on the absorber layer; forming a transparent front contact on the buffer layer; and forming a metal grid on the transparent front contact.

19 . The method of claim 18 , wherein the constituent components for the absorber material comprise zinc, tin, and at least one of sulfur and selenium.

20 . The method of claim 18 , wherein the constituent components for the absorber material comprise indium, gallium, and at least one of sulfur and selenium.

21 . The method of claim 18 , wherein the constituent components for the absorber material comprise indium and selenium.

22 . A photovoltaic device, comprising:
a substrate; an electrically conductive layer on the substrate; an absorber layer on the electrically conductive layer, wherein the absorber layer comprises silver and a halide, and wherein the silver and the halide are both present throughout the absorber layer; a buffer layer on the absorber layer; a transparent front contact on the buffer layer; and a metal grid on the transparent front contact.

Assignees

• IBM

Inventors

• Antunez Priscilla D
• Gershon Talia S
• Haight Richard A
• Todorov Teodor K

Classifications

• H10F71/128

  Annealing · CPC title

• H01L31/18

  Electricity · mapped topic

• H01L31/0322

  Electricity · mapped topic

• C09D11/52

  Electrically conductive inks · CPC title

• C09D11/38

  characterised by non-macromolecular additives other than solvents, pigments or dyes · CPC title