Semiconductor device and manufacturing method of the same

Patent metadata

Field	Value
Publication number	US-2018102420-A1
Application number	US-201715722055-A
Country	US
Kind code	A1
Filing date	Oct 2, 2017
Priority date	Oct 22, 2013
Publication date	Apr 12, 2018
Grant date	—

Abstract

To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

First claim

1 . (canceled)

2 . A semiconductor device comprising:
a first transistor formed using a semiconductor substrate; a second transistor comprising an oxide semiconductor film, the second transistor being electrically connected to the first transistor; a first insulating film comprising nitrogen; a second insulating film comprising aluminum oxide; and a third insulating film comprising oxygen, wherein the first insulating film is over the first transistor, wherein the second insulating film is over the first insulating film, wherein the third insulating film is over the second insulating film, wherein the oxide semiconductor film is over and in contact with the third insulating film, wherein an opening penetrates through the second insulating film and the third insulating film, and wherein a first conductive film is in contact with a second conductive film through the opening.

3 . The semiconductor device according to claim 2 ,
wherein the second insulating film is formed by an atomic layer deposition method.

4 . The semiconductor device according to claim 2 ,
wherein the first insulating film is a silicon nitride film.

5 . The semiconductor device according to claim 2 ,
wherein the first insulating film is a silicon nitride oxide film.

6 . The semiconductor device according to claim 2 ,
wherein the third insulating film comprises silicon oxide.

7 . The semiconductor device according to claim 2 ,
wherein the third insulating film comprises silicon oxynitride.

8 . A semiconductor device comprising:
a first transistor formed using a semiconductor substrate; a second transistor comprising an oxide semiconductor film, the second transistor being electrically connected to the first transistor; a first insulating film comprising nitrogen; a second insulating film comprising hafnium oxide; and a third insulating film comprising oxygen, wherein the first insulating film is over the first transistor, wherein the second insulating film is over the first insulating film, wherein the third insulating film is over the second insulating film, wherein the oxide semiconductor film is over and in contact with the third insulating film, wherein an opening penetrates through the second insulating film and the third insulating film, and wherein a first conductive film is in contact with a second conductive film through the opening.

9 . The semiconductor device according to claim 8 ,
wherein the second insulating film is formed by an atomic layer deposition method.

10 . The semiconductor device according to claim 8 ,
wherein the first insulating film is a silicon nitride film.

11 . The semiconductor device according to claim 8 ,
wherein the first insulating film is a silicon nitride oxide film.

12 . The semiconductor device according to claim 8 ,
wherein the third insulating film comprises silicon oxide.

13 . The semiconductor device according to claim 8 ,
wherein the third insulating film comprises silicon oxynitride.

14 . A semiconductor device comprising:
a first transistor formed using a semiconductor substrate; a second transistor comprising an oxide semiconductor film, the second transistor being electrically connected to the first transistor; a first insulating film comprising nitrogen; a second insulating film capable of preventing diffusion of hydrogen; and a third insulating film comprising oxygen, wherein the first insulating film is over the first transistor, wherein the second insulating film is over the first insulating film, wherein the third insulating film is over the second insulating film, wherein the oxide semiconductor film is over and in contact with the third insulating film, wherein an opening penetrates through the second insulating film and the third insulating film, and wherein a first conductive film is in contact with a second conductive film through the opening.

15 . The semiconductor device according to claim 14 ,
wherein the second insulating film is formed by an atomic layer deposition method.

16 . The semiconductor device according to claim 14 ,
wherein the first insulating film is a silicon nitride film.

17 . The semiconductor device according to claim 14 ,
wherein the first insulating film is a silicon nitride oxide film.

18 . The semiconductor device according to claim 14 ,
wherein the third insulating film comprises silicon oxide.

19 . The semiconductor device according to claim 14 ,
wherein the third insulating film comprises silicon oxynitride.

Assignees

• Semiconductor Energy Lab

Inventors

• Ando Yoshinori
• Miyairi Hidekazu
• Yamade Naoto
• Higa Asako
• Suzuki Miki
• Ieda Yoshinori
• Suzuki Yasutaka
• Nei Kosei
• Yamazaki Shunpei

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P50/28

  of insulating materials · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/6516

  of treatments performed after formation of the materials · CPC title