Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the same

Patent metadata

Field	Value
Publication number	US-2018102284-A1
Application number	US-201715498945-A
Country	US
Kind code	A1
Filing date	Apr 27, 2017
Priority date	Oct 7, 2016
Publication date	Apr 12, 2018
Grant date	—

Abstract

An organometallic precursor includes tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal. A first structure including an alkylsilyl group or a second structure including an allyl ligand is bonded to the cyclopentadienyl ligand or bonded to the central metal.

First claim

What is claimed is:

1 . An organometallic precursor comprising:
a central metal that is tungsten; a cyclopentadienyl ligand bonded to the central metal; and a first structure or a second structure, the first structure including an alkylsilyl group bonded to the cyclopentadienyl ligand and the second structure including an allyl ligand bonded to the central metal.

2 . The organometallic precursor of claim 1 , wherein the organometallic precursor is represented by the following Chemical Formula 1, and

wherein R1, R2, R3 and R4 are independently one of a hydrogen atom, a halogen atom and an alkyl group of C1 to C7.

3 . The organometallic precursor of claim 2 , wherein the organometallic precursor is represented by one of the following Chemical Formulae 1-1, 1-2, 1-3 and 1-4,

4 . The organometallic precursor of claim 1 , wherein
the organometallic precursor includes the first structure including the alkylsilyl group bonded to the cyclopentadienyl ligand, and the alkylsilyl group includes three alkyl groups bonded to a silicon atom.

5 . The organometallic precursor of claim 1 , wherein
the organometallic precursor is represented by the following Chemical Formula 2,

and
wherein R1, R2, R3 and R4 are each independently one of a hydrogen atom, a halogen atom and an alkyl group of C1 to C7.

6 . A method of manufacturing a semiconductor device, the method comprising:
forming a barrier conductive layer by providing an organometallic precursor on a semiconductor substrate,
the organometallic precursor including tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal, and
the organometallic precursor including a first structure or a second structure, the first structure including an alkylsilyl group bonded to the cyclopentadienyl ligand and the second structure including an allyl ligand bonded to the central metal; and
forming a metal layer on the barrier conductive layer.

7 . The method of claim 6 , wherein the organometallic precursor is represented by one of the following Chemical Formulae 1 and 2,

wherein R1, R2, R3 and R4 are each independently one of a hydrogen atom, a halogen atom and an alkyl group of C1 to C7.

8 . The method of claim 6 , wherein
the forming the barrier conductive layer includes providing a nitrogen-containing gas over the substrate during the providing the organometallic precursor, and the forming the forming the barrier conductive layer includes forming the barrier conductive layer as a tungsten nitride layer.

9 . The method of claim 8 , wherein
the forming the metal layer includes providing the organometallic precursor on the barrier conductive layer, and the metal layer includes a tungsten layer.

10 . The method of claim 9 , wherein the forming the metal layer includes providing the organometallic precursor on the barrier conductive layer with a hydrogen gas.

11 . A method of forming a layer comprising:
forming a precursor thin film on a substrate,
the precursor thin film including an organometallic precursor,
the organometallic precursor including a cyclopentadienyl ligand bonded to a central metal and one of a first structure and a second structure,
the first structure including an alkylsilyl group bonded to the cyclopentadienyl ligand and the second structure including an allyl ligand bonded to the central metal;

forming a metal nitride layer by providing a reaction gas over the precursor thin film, the reaction gas including a nitrogen-containing gas; and
forming a plurality of metal nitride layers by repeating the forming the precursor thin film and the forming the metal nitride layer at least one time.

12 . The method of claim 11 , further comprising:
forming a plurality of reaction material layers alternately stacked with the plurality of metal nitride layers, wherein the forming the plurality of reaction material layers includes forming a metal atomic layer on a corresponding one of the plurality of metal nitride layers and providing the reaction gas over the metal atomic layer before forming a next one of the plurality of metal nitride layers.

13 . The method of claim 11 , wherein
the central metal is tungsten (W), the organometallic precursor is represented by the following Chemical Formula 1,

and
R1, R2, R3 and R4 are independently one of a hydrogen atom, a halogen atom, and an alkyl group of C1 to C7.

14 . The method of claim 11 , wherein
the forming the plurality of metal nitride layers is performed in a process chamber while the process chamber is maintained at a temperature in a range of range of about 200° C. to about 600° C.

15 . The method of claim 11 , wherein
the organometallic precursor is represented by the following Chemical Formula 2,

and
wherein R1, R2, R3 and R4 are each independently one of a hydrogen atom, a halogen atom and an alkyl group of C1 to C7.

Assignees

• Samsung Electronics Co Ltd
• Dnf Co Ltd

Inventors

• Sun Chang-Woo
• Yun Ji-Eun
• Lim Jae-Soon
• Cho Youn-Joung
• Kim Myong-Woon
• Lee Kang-Yong
• Lee Sang-Ick
• Cho Sung-Woo

Classifications

• H10P14/432

  using selective deposition · CPC title

• H10W20/033

  in openings in dielectrics · CPC title

• H10W20/032 Primary

  of conductive barrier, adhesion or liner layers · CPC title

• H10P14/40

  of conductive or resistive materials · CPC title

• C07F11/00 Primary

  Compounds containing elements of Groups 6 or 16 of the Periodic Table · CPC title