Image sensor including depletion inducing layer

Patent metadata

Field	Value
Publication number	US-2018090534-A1
Application number	US-201715479793-A
Country	US
Kind code	A1
Filing date	Apr 5, 2017
Priority date	Sep 29, 2016
Publication date	Mar 29, 2018
Grant date	—

Abstract

An image sensor may include a pixel array where a plurality of unit pixels are arranged in a two dimensional matrix, wherein each of the unit pixels includes: a substrate including a photoelectric conversion element; one or more depletion inducing layers formed in the photoelectric conversion element; an inter-layer dielectric layer formed over the substrate; and one or more floating electrodes formed in the inter-layer dielectric layer to overlap each of the depletion inducing layers.

First claim

1 . An image sensor, comprising:
a pixel array where a plurality of unit pixels are arranged in a two dimensional matrix, wherein each of the unit pixels includes:
a substrate including a photoelectric conversion element;
one or more depletion inducing layers formed in the photoelectric conversion element;
an inter-layer dielectric layer formed over the substrate; and
one or more floating electrodes formed in the inter-layer dielectric layer to overlap each of the depletion inducing layers,
wherein the photoelectric conversion element includes:
a first impurity region having first conductivity; and
a second impurity region having second conductivity which is complementary to the first conductivity and overlapping the first impurity region in a vertical direction,
wherein each of the depletion inducing layers is disposed in the second impurity region. wherein each of the depletion inducing layers includes an impurity region having the first conductivity which is complementary to the second impurity region.

2 . The image sensor of claim 1 , further comprising:
one or more trenches formed in the inter-layer dielectric layer to overlap each of the depletion inducing layers, wherein the floating electrodes are buried in the trenches.

3 . The image sensor of claim 1 ,
wherein the second impurity region has a greater thickness than the first impurity region,

4 . (canceled)

5 . The image sensor of claim 1 , wherein each of the depletion inducing layers is disposed in a center of the second impurity region in a vertical direction.

6 . The image sensor of claim 1 , wherein each of the depletion inducing layers has a pillar shape of a planar shape selected from the group consisting of a polygon equal to or greater than triangle, a circle, an oval, a polygon ring equal to or greater than a triangle ring, a circle ring, and an oval ring.

7 . The image sensor of claim 1 , wherein the inter-layer dielectric layer includes a first dielectric layer over the substrate and a second dielectric layer over the first dielectric layer, and each of the floating electrodes is disposed in the first dielectric layer.

8 . The image sensor of claim 1 , wherein each of the floating electrodes has the same planar shape to each of the depletion inducing layers.

9 . The image sensor of claim 1 , wherein a line width of each of the floating electrodes is the same to or smaller than a line width of each of the depletion inducing layers.

10 . An image sensor, comprising:
a pixel array where a plurality of unit pixels are arranged in a two dimensional matrix, wherein each of the unit pixels includes:
a substrate including a photoelectric conversion element;
one or more depletion inducing layers formed in the photoelectric conversion element;
an inter-layer dielectric layer formed over the substrate; and
a floating electrode formed in the inter-layer dielectric layer and including a first electrode and one or more second electrodes coupled to a bottom of the first electrode to overlap each of the depletion inducing layers.

11 . The image sensor of claim 10 , wherein the inter-layer dielectric layer has a multiple structure where a first dielectric layer, a second dielectric layer and a third dielectric layer are sequentially stacked, and further comprising:
a first trench formed in the second dielectric layer; and one or more second trenches formed in the first dielectric layer and having an entrance portion coupled to a bottom of the first trench and overlapping each of the depletion inducing layers, wherein the first electrode and the second electrode are buried in the first trench and the second trenches, respectively.

12 . The image sensor of claim 11 , further comprising:
an anti-reflection layer interposed between the first dielectric layer and the second dielectric layer.

13 . The image sensor of claim 11 , wherein the first trench has a smaller height than the second trench.

14 . The image sensor of claim 11 , wherein the first trench has a greater line width than the second trench.

15 . The image sensor of claim 10 , wherein the photoelectric conversion element includes:
a first impurity region having first conductivity; and a second impurity region having second conductivity which is complementary to the first conductivity and overlapping the first impurity region in a vertical direction and having a greater thickness than the first impurity region, wherein each of the depletion inducing layers is disposed in the second impurity region.

16 . The image sensor of claim 15 , wherein each of the depletion inducing layers includes an impurity region having conductivity which is complementary to the second impurity region.

17 . The image sensor of claim 15 , wherein each of the depletion inducing layers is disposed in a center of the second impurity region in a vertical direction.

18 . The image sensor of claim 10 , wherein the first electrode has an area corresponding to the photoelectric conversion element or a greater area.

19 . The image sensor of claim 10 , wherein each of the depletion inducing layers has a pillar shape of a planar shape selected from the group consisting of a polygon equal to or greater than triangle, a circle, an oval, a polygon ring equal to or greater than a triangle ring, a circle ring, and an oval ring.

20 . The image sensor of claim 10 , wherein each of the second electrodes has the same planar shape to each of the depletion inducing layers.

21 . The image sensor of claim 10 , wherein a line width of each of the second electrodes is the same to or smaller than a line width of each of the depletion inducing layers.

Assignees

• Sk Hynix Inc

Inventors

• Kim Do-Hwan
• Sa Seung-Hoon

Classifications

• H01L27/14685

  Electricity · mapped topic

• H01L27/14636

  Electricity · mapped topic

• H01L27/14612

  Electricity · mapped topic

• H01L27/14689

  Electricity · mapped topic

• H01L27/14623

  Electricity · mapped topic