Operation method of plasma processing apparatus

Patent metadata

Field	Value
Publication number	US-2018090345-A1
Application number	US-201715468259-A
Country	US
Kind code	A1
Filing date	Mar 24, 2017
Priority date	Sep 28, 2016
Publication date	Mar 29, 2018
Grant date	—

Abstract

A vacuum processing apparatus includes a processing chamber inside a vacuum vessel, a plasma forming chamber above, a dielectric plate member having multiple through-holes for introducing particles of plasma to the processing chamber between the processing chamber and the plasma forming chamber above a sample stage upper surface in the processing chamber, heating lamp arranged around an outer periphery of the plate member to irradiate an electromagnetic wave to the wafer to heat, and a ring-shaped window member for transmitting the electromagnetic wave from the lamp. The apparatus performs, from the through-holes to the wafer, supplying particles of plasma formed in the plasma forming chamber to form a reaction product, extinguishing the plasma and heating the wafer to desorb the product, and supplying particles, formed in the plasma forming chamber, of the plasma of cleaning gas to the plasma forming chamber, the processing chamber, and the window member.

First claim

What is claimed is:

1 . An operation method of a vacuum processing apparatus, the apparatus comprising:
a vacuum vessel having an inside configured to be decompressed; a processing chamber that is arranged in an inner part of the vacuum vessel, wherein a wafer to be processed is arranged and processed inside thereof; a plasma forming chamber that is arranged above the processing chamber, wherein plasma is formed by using processing gas supplied into an inner part thereof; a sample stage that is arranged at a lower part inside of the processing chamber, the sample stage having a top surface for mounting the wafer; a dielectric plate member that is arranged above the upper surface of the sample stage between the processing chamber and the plasma forming chamber in the vacuum vessel, the dielectric plate member having a plurality of through-holes wherein particles of the plasma are introduced into the processing chamber therethrough; and a ring-shaped window member that is arranged on an outer peripheral side of the plate member around the plate member above the processing chamber, the ring-shaped window member constituted of a lamp for irradiating and heating the wafer with an electromagnetic wave, and a member facing inside of the processing chamber and being configured to transmit the electromagnetic wave from the lamp, wherein a side surface surrounding a lower surface of the window member and the plate member is constituted of a member that transmits the electromagnetic wave, of the window member, the method comprising: performing a process of forming a reaction product on a surface of the wafer by supplying, from the through-holes to the wafer mounted on the sample stage, the particles of the plasma that has been formed in the plasma forming chamber by using the processing gas; then performing a process of extinguishing the plasma in the plasma forming chamber and heating the wafer with the electromagnetic wave to desorb the reaction product; and then performing a process of supplying a cleaning gas into the plasma forming chamber to supply particles of the plasma formed in the plasma forming chamber into the plasma forming chamber, the processing chamber, and the window member.

2 . The operation method of a vacuum processing apparatus according to claim 1 , wherein
in the process of heating the wafer, the plate member is heated by the electromagnetic wave.

3 . The operation method of a vacuum processing apparatus according to claim 1 , wherein
the process of forming the reaction product on a surface of the wafer and a process of desorbing the reaction product are alternately repeated for a plurality of times.

4 . An operation method of a vacuum processing apparatus, the apparatus comprising:
a vacuum vessel having an inside configured to be decompressed; a processing chamber that is arranged in an inner part of the vacuum vessel, wherein a wafer to be processed is arranged and processed inside thereof; a plasma forming chamber that is arranged above the processing chamber, wherein plasma is formed by using processing gas supplied into an inner part thereof; a sample stage that is arranged at a lower part inside of the processing chamber, the sample stage having a top surface for mounting the wafer; a dielectric plate member that is arranged above the upper surface of the sample stage between the processing chamber and the plasma forming chamber in the vacuum vessel, the dielectric plate member having a plurality of through-holes wherein particles of the plasma are introduced into the processing chamber therethrough; and a ring-shaped window member that is arranged on an outer peripheral side of the plate member around the plate member above the processing chamber, the ring-shaped window member constituted of a lamp for irradiating and heating the wafer with an electromagnetic wave, and a member facing inside of the processing chamber and being configured to transmit the electromagnetic wave from the lamp, wherein a side surface surrounding a lower surface of the window member and the plate member is constituted of a member that transmits the electromagnetic wave, of the window member, the method comprising: performing a process of forming a reaction product on a surface of the wafer by supplying, from the through-holes to the wafer mounted on the sample stage, particles of the plasma that has been formed in the plasma forming chamber by using the processing gas; and then performing a process of heating the wafer with the electromagnetic wave to desorb the reaction product, while supplying inert gas along the surface of the window member facing the processing chamber with the plasma in the plasma forming chamber having been extinguished.

5 . The operation method of a vacuum processing apparatus according to claim 4 , wherein
during a process of heating the wafer to desorb the reaction product, the inert gas is supplied from an outer peripheral side of the ring-shaped window member toward a center side of the processing chamber.

6 . The operation method of a vacuum processing apparatus according to claim 4 , wherein
the process of forming the reaction product on the surface of the wafer and a process of heating the wafer to desorb the reaction product are alternately repeated for a plurality of times.

Assignees

• Hitachi High Tech Corp

Inventors

• Kouzuma Yutaka
• Kobayashi Hiroyuki
• MIYOSHI Nobuya
• Yokogawa Kenetsu
• Watanabe Tomoyuki

Classifications

• H10P72/0436

  mainly by radiation · CPC title

• H10P72/0421 Primary

  for drying etching · CPC title

• H01J37/32862

  In situ cleaning of vessels and/or internal parts · CPC title

• H01J2237/334

  Etching · CPC title

• H01L21/67115

  Electricity · mapped topic