Light-emitting diode having improved light extraction efficiency and method for manufacturing same
US-2015014702-A1 · Jan 15, 2015 · US
US2018069377A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018069377-A1 |
| Application number | US-201715807824-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 9, 2017 |
| Priority date | Jan 27, 2015 |
| Publication date | Mar 8, 2018 |
| Grant date | — |
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In various embodiments, laser apparatuses include thermal bonding layers between various components and sealing materials for preventing or retarding movement of thermal bonding material out of the thermal bonding layers.
Opening claim text (preview).
What is claimed is: 1 .- 7 . (canceled) 8 . A method of sealing a laser apparatus, the method comprising: disposing a thermal bonding layer over a surface of an electrode mount, the thermal bonding layer comprising a thermal bonding material; depositing a sealing material over at least a portion of the thermal bonding layer and at least a portion of an external surface of the electrode mount; and disposing a beam emitter in direct contact with the thermal bonding layer, wherein at least a portion of the sealing material is positioned to prevent or retard movement of the thermal bonding material out of the thermal bonding layer. 9 . The method of claim 8 , further comprising, before disposing the beam emitter in direct contact with the thermal bonding layer: removing a portion of the sealing material to reveal an exposed portion of the thermal bonding layer, wherein the beam emitter is disposed in direct contact with the exposed portion of the thermal bonding layer. 10 . The method of claim 8 , further comprising: covering a portion of the thermal bonding layer with a masking material before depositing the sealing material; and after depositing the sealing material, removing the masking material before disposing the beam emitter in direct contact with the thermal bonding layer. 11 . The method of claim 8 , wherein depositing the sealing material comprises at least one of electroplating or electroless deposition. 12 . The method of claim 8 , wherein the thermal bonding material comprises indium. 13 . The method of claim 8 , wherein the sealing material comprises at least one of copper, aluminum, nickel, or chromium. 14 . A method of sealing a laser apparatus, the method comprising: disposing a thermal bonding layer over a surface of an electrode mount, the thermal bonding layer comprising a thermal bonding material; disposing a beam emitter in direct contact with the thermal bonding layer; and thereafter, depositing a sealing material over at least a portion of the thermal bonding layer and at least a portion of an external surface of the electrode mount, wherein at least a portion of the sealing material is positioned to prevent or retard movement of the thermal bonding material out of the thermal bonding layer. 15 . The method of claim 14 , further comprising: depositing the sealing material over at least a portion of the beam emitter; and removing at least a portion of the sealing material to reveal a portion of the beam emitter. 16 . The method of claim 14 , further comprising: covering a portion of the beam emitter with a masking material before depositing the sealing material; and removing the masking material after depositing the sealing material. 17 . The method of claim 14 , wherein depositing the sealing material comprises at least one of electroplating or electroless deposition. 18 . The method of claim 14 , wherein the thermal bonding material comprises indium. 19 . The method of claim 14 , wherein the sealing material comprises at least one of copper, aluminum, nickel, or chromium. 20 .- 24 . (canceled) 25 . The method of claim 1 , further comprising disposing a second electrode mount over the beam emitter opposite the electrode mount. 26 . The method of claim 25 , further comprising: disposing a second thermal bonding layer between the second electrode mount and the beam emitter, the second thermal bonding layer comprising a second thermal bonding material; and positioning a second sealing material to prevent or retard movement of the second thermal bonding material out of the second thermal bonding layer. 27 . The method of claim 1 , wherein the beam emitter comprises a diode bar configured to emit a plurality of discrete beams. 28 . The method of claim 1 , wherein a melting point of the sealing material is higher than a melting point of the thermal bonding material. 29 . The method of claim 14 , further comprising disposing a second electrode mount over the beam emitter opposite the electrode mount. 30 . The method of claim 29 , further comprising: disposing a second thermal bonding layer between the second electrode mount and the beam emitter, the second thermal bonding layer comprising a second thermal bonding material; and positioning a second sealing material to prevent or retard movement of the second thermal bonding material out of the second thermal bonding layer. 31 . The method of claim 14 , wherein the beam emitter comprises a diode bar configured to emit a plurality of discrete beams. 32 . The method of claim 14 , wherein a melting point of the sealing material is higher than a melting point of the thermal bonding material.
emitting more than one wavelength · CPC title
Liquid cooling, e.g. a liquid cools a mount of the laser · CPC title
which comprises an additional resonator · CPC title
Array arrangements, e.g. constituted by discrete laser diodes or laser bar (H01S5/42 takes precedence) · CPC title
using a diffraction grating · CPC title
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