Capacitor and manufacturing method therefor

Patent metadata

Field	Value
Publication number	US-2018047517-A1
Application number	US-201715725652-A
Country	US
Kind code	A1
Filing date	Oct 5, 2017
Priority date	May 12, 2015
Publication date	Feb 15, 2018
Grant date	—

Abstract

A capacitor that includes a conductive metal base material with a porous part, a dielectric layer on the porous part, and an upper electrode on the dielectric layer, and has an electrostatic capacitance formation part only on one principal surface side of the capacitor.

First claim

1 . A capacitor comprising:
a conductive metal base material having a porous part defining at least part of a first principal surface of the conductive metal base material, the conductive metal base material having a second principal surface opposed to the first principal surface; a dielectric layer on the porous part that defines the at least part of the first principal surface and not on the second principal surface; and an upper electrode on the dielectric layer.

2 . The capacitor according to claim 1 , wherein the conductive metal base material further comprises a supporting part that defines the second principal surface.

3 . The capacitor according to claim 1 , wherein the conductive metal base material further comprises a low-porosity part that is lower in porosity than the porous part.

4 . The capacitor according to claim 1 , wherein the low-porosity part surrounds the porous part.

5 . The capacitor according to claim 1 , wherein the upper electrode is spaced from the dielectric layer along an edge of the capacitor.

6 . The capacitor according to claim 5 , further comprising an insulating part between the upper electrode and the dielectric layer at the edge of the capacitor.

7 . The capacitor according to claim 1 , further comprising an insulating part between the conductive metal base material and the upper electrode at an end of the capacitor.

8 . The capacitor according to claim 7 , wherein the conductive metal base material, the dielectric layer, the insulating part, and the upper electrode are disposed in this order at the end of the capacitor.

9 . The capacitor according to claim 7 , wherein the conductive metal base material, the insulating part, the dielectric layer, and the upper electrode are disposed in this order at the end of the capacitor.

10 . A method for manufacturing a capacitor, the method comprising:
preparing a conductive substrate comprising a porous metal layer; and at only a first principal surface of the conductive substrate, dividing the porous metal layer into a plurality of porous parts; forming a dielectric layer to cover the plurality of porous parts; and forming an upper electrode on the dielectric layer.

11 . The method for manufacturing a capacitor according to claim 10 , wherein the conductive metal base material further comprises a supporting part at a second principal surface thereof.

12 . The method for manufacturing a capacitor according to claim 10 , wherein the dielectric layer is formed by an atomic layer deposition method.

13 . The method for manufacturing a capacitor according to claim 10 , wherein the upper electrode is formed by an atomic layer deposition method.

14 . The method for manufacturing a capacitor according to claim 10 , wherein the conductive metal base material further comprises a low-porosity part that is lower in porosity than the porous part.

15 . The method for manufacturing a capacitor according to claim 10 , wherein the low-porosity part surrounds the porous part.

16 . The method for manufacturing a capacitor according to claim 10 , further comprising forming an insulating part between the upper electrode and the dielectric layer.

17 . The method for manufacturing a capacitor according to claim 10 , further comprising forming an insulating part between the conductive metal base material and the upper electrode.

Assignees

• Murata Manufacturing Co

Inventors

• Kanryo Koichi
• Inoue Noriyuki
• Saeki Hiromasa
• Arakawa Takeo
• Hattori Kazuo
• Ito Ken

Classifications

• H01G9/26

  Structural combinations of electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices with each other · CPC title

• H01G9/012

  specially adapted for solid capacitors · CPC title

• H01G9/15 Primary

  Solid electrolytic capacitors (H01G11/00 takes precedence) · CPC title

• H01G9/028

  Organic semiconducting electrolytes, e.g. TCNQ · CPC title

• H01G9/0032

  formation of the dielectric layer · CPC title