Composite film and fabrication method thereof, photoelectric element and photoelectric apparatus

Patent metadata

Field	Value
Publication number	US-2018037814-A1
Application number	US-201715787207-A
Country	US
Kind code	A1
Filing date	Oct 18, 2017
Priority date	Oct 21, 2013
Publication date	Feb 8, 2018
Grant date	—

Abstract

Embodiments of the invention relate to a composite film and a fabrication method thereof, a photoelectric element and a photoelectric apparatus. The fabrication method of the composite film includes: preparing a polyfluorene-based compound solution, wherein the polyfluorene-based compound solution includes polyfluorene or polyfluorene derivatives; preparing a quantum dot solution; mixing the polyfluorene-based compound solution and the quantum dot solution together to prepare a mixed solution; removing a solvent in the mixed solution to prepare the composite film.

First claim

What is claimed is:

1 . A composite film fabricated by using a method which comprises:
preparing a polyfluorene-based compound solution, wherein the polyfluorene-based compound solution includes polyfluorene or polyfluorene derivatives; preparing a quantum dot solution; mixing the polyfluorene-based compound solution and the quantum dot solution together to prepare a mixed solution; and removing a solvent in the mixed solution to prepare the composite film.

2 . The composite film according to claim 1 , wherein, in the composite film, a range of mass ratio of the polyfluorene-based compounds to the quantum dots is 400:1-5:1, the polyfluorene-based compounds including polyfluorene or polyfluorene derivatives.

3 . The composite film according to claim 1 , wherein the polyfluorene-based compound comprises polyfluorene or polyfluorene derivatives.

4 . The composite film according to claim 3 , wherein the polyfluorene derivatives include one or more materials selected from the group consisting of poly (9,9-dialkyl fluorene), copolymer of bis-hexyl fluorene and anthracene, biphenyl with dendrite-containing side chains, tetra-alkyl-substituted indenofluorene polymer, aryl-substituted indenofluorene polymer, polyfluorene-bithiophene alternate copolymer, as well as, binary or ternary random copolymers of fluorene and thiophene, ethylene dioxythiophene, 4,7-dithiophene-2,1,3-benzothiadiazole, or 4,7-dithiophene-2,1,3-benzoselenadiazole.

5 . The composite film according to claim 1 , wherein the quantum dots include at least one of Group II-VI element compounds and Group III-V element compounds.

6 . The composite film according to claim 5 , wherein a material of the quantum dots is at least one selected from the group consisting of ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, BN, BP, BAs, BSb, A 1 N, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InAs, InN, InP and InSb.

7 . A photoelectric element, comprising the composite film according to claim 1 .

8 . The photoelectric element according to claim 7 , wherein, in the composite film, a range of mass ratio of the polyfluorene-based compounds to the quantum dots is 400:1-5:1, the polyfluorene-based compounds including polyfluorene or polyfluorene derivatives.

9 . The photoelectric element according to claim 7 , wherein the polyfluorene-based compound comprisies polyfluorene or polyfluorene derivatives.

10 . The photoelectric element according to claim 9 , wherein the polyfluorene derivatives include one or more materials selected from the group consisting of poly (9,9-dialkyl fluorene), copolymer of bis-hexyl fluorene and anthracene, biphenyl with dendrite-containing side chains, tetra-alkyl-substituted indenofluorene polymer, aryl-substituted indenofluorene polymer, polyfluorene-bithiophene alternate copolymer, as well as, binary or ternary random copolymers of fluorene and thiophene, ethylene dioxythiophene, 4,7-dithiophene-2,1,3-benzothiadiazole, or 4,7-dithiophene-2,1,3-benzoselenadiazole.

11 . The photoelectric element according to claim 7 , wherein the quantum dots include at least one of Group II-VI element compounds and Group III-V element compounds.

12 . The photoelectric element according to claim 11 , wherein a material of the quantum dots is at least one selected from the group consisting of ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, BN, BP, BAs, BSb, A 1 N, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InAs, InN, InP and InSb.

Assignees

• Boe Technology Group Co Ltd

Inventors

• Gu Jingxia
• Tang Chen

Classifications

• C09K2211/1416

  Condensed systems · CPC title

• C09K11/565 Primary

  with zinc cadmium · CPC title

• C09K11/06

  containing organic luminescent materials · CPC title

• B05D1/005

  Spin coating · CPC title

• C08K2003/3036

  of zinc · CPC title