Substrate processing method and substrate processing device

Patent metadata

Field	Value
Publication number	US-2018033605-A1
Application number	US-201515548183-A
Country	US
Kind code	A1
Filing date	Dec 28, 2015
Priority date	Feb 5, 2015
Publication date	Feb 1, 2018
Grant date	—

Abstract

Method for performing cleaning treatment on a substrate having a fine pattern provided with a film formed on the surface, comprises: a silylating step of supplying a silylating agent to the surface of the substrate and silylating the surface of the substrate; and a liquid-chemical cleaning step of supplying a cleaning liquid chemical to the surface of the substrate and cleaning the surface of the substrate after, or simultaneously with, the silylating step.

First claim

1 . A substrate processing method of performing a cleaning treatment to a substrate having a fine pattern including a film on a surface of the substrate, including:
a silylating step of silylating the surface of the substrate by supplying a silylation agent to the surface of the substrate; and a chemical liquid cleaning step of cleaning the surface of the substrate by supplying a cleaning chemical liquid to the surface of the substrate after the silylating step or in parallel with the silylating step.

2 . A substrate processing method according to claim 1 , wherein the silylating step includes a step of supplying a liquid silylation agent to the surface of the substrate.

3 . A substrate processing method according to claim 1 , wherein the chemical liquid cleaning step includes a latter supplying step of supplying the cleaning chemical liquid to the surface of the substrate after the silylating step.

4 . A substrate processing method according to claim 1 , wherein the chemical liquid cleaning step includes a parallel supplying step of supplying the cleaning chemical liquid to the surface of the substrate in parallel with the silylating step.

5 . A substrate processing method according to claim 1 , further including a physical cleaning step of physically cleaning the surface of the substrate in parallel with the silylating step or prior to the silylating step.

6 . A substrate processing method according to claim 1 , further including a substrate heating step of heating the substrate in parallel with the silylating step.

7 . A substrate processing method according to claim 1 , further including an oxide film forming step of forming an oxide film on the surface of the substrate prior to the silylating step.

8 . A substrate processing method according to claim 1 , wherein the cleaning chemical liquid is an ammonia-hydrogen peroxide mixture.

9 . A substrate processing method according to claim 1 , wherein the cleaning chemical liquid is a sulfuric acid/hydrogen peroxide mixture.

10 . A substrate processing method according to claim 1 , wherein the fine pattern includes an SiN film fabricated by a plasma CVD method.

11 . A substrate processing apparatus for performing a cleaning treatment to a substrate having a fine pattern including a film on a surface of the substrate, including:
a silylation agent supplying unit for supplying a silylation agent to the surface of the substrate; a cleaning chemical liquid supplying unit for supplying a cleaning chemical liquid to the surface of the substrate; and a controller performing, through controlling the silylation agent supplying unit and the cleaning chemical liquid supplying unit, a silylating step of silylating the surface of the substrate by supplying the silylation agent to the surface of the substrate and a chemical liquid cleaning step of cleaning the surface of the substrate by supplying the cleaning chemical liquid to the surface of the substrate after the silylating step or in parallel with the silylating step.

12 . A substrate processing apparatus according to claim 11 , wherein the controller performs a step of supplying a liquid silylation agent to the surface of the substrate by the silylation agent supplying unit in the silylating step.

13 . A substrate processing apparatus according to claim 11 , wherein the controller performs a latter supplying step of supplying the cleaning chemical liquid to the surface of the substrate by the cleaning chemical liquid supplying unit after the silylating step in the chemical liquid cleaning step.

14 . A substrate processing apparatus according to claim 11 or 12 , wherein the controller performs a parallel supplying step of supplying the cleaning chemical liquid to the surface of the substrate by the cleaning chemical liquid supplying unit in parallel with the silylating step in the chemical liquid cleaning step.

15 . A substrate processing apparatus according to claim 11 , wherein the controller further performs a physical cleaning step of physically cleaning the surface of the substrate in parallel with the silylating step or prior to the silylating step.

16 . A substrate processing apparatus according to claim 11 , wherein the controller further performs a substrate heating step of heating the substrate in parallel with the silylating step.

17 . A substrate processing apparatus according to claim 11 , wherein the controller further performs an oxide film forming step of forming an oxide film on the surface of the substrate prior to the silylating step.

18 . A substrate processing apparatus according to claim 11 , wherein the cleaning chemical liquid is an ammonia-hydrogen peroxide mixture.

19 . A substrate processing apparatus according to claim 11 , wherein the cleaning chemical liquid is a sulfuric acid/hydrogen peroxide mixture.

20 . A substrate processing apparatus according to claim 11 , wherein the fine pattern includes an SiN film fabricated by a plasma CVD method.

Assignees

• Screen Holdings Co Ltd

Inventors

• Ota Takashi
• Hinode Taiki

Classifications

• H10P72/0454

  surrounding a central transfer chamber · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P72/0432

  mainly by conduction · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title