Sensing panel and manufacturing method of the same, method for pressure detection and temperature detection

Patent metadata

Field	Value
Publication number	US-2018024682-A1
Application number	US-201514773246-A
Country	US
Kind code	A1
Filing date	Apr 30, 2015
Priority date	Apr 13, 2015
Publication date	Jan 25, 2018
Grant date	—

Abstract

A sensing panel and a manufacturing method of the same, and a method for pressure detection and temperature detection are disclosed in the present invention. The sensing panel comprises a scanning line, a first data line, a second data line, a first detection line, a second detection line, a pressure detecting unit, and a temperature detecting unit. The pressure detecting device is used to detect a pressure applied to the pressure detecting unit; the temperature detecting device is used to detect a temperature an object either near the temperature detecting unit or in contact with the temperature detecting unit. The present invention is able to detect the pressure and the temperature applied to the sensing panel.

First claim

What is claimed is:

1 . A sensing panel, wherein the sensing panel comprises:
at least one scanning line; at least one data line combination, which comprises a first data line and a second data line; at least one signal-detection line combination, which comprises a first detection line and a second detection line; at least one detecting unit combination, wherein the detecting unit combination is connected with the scanning line, the data line combination, and the signal-detection line combination, the detecting unit combination comprises:
a pressure detecting unit, which comprises a first thin film transistor switch and a pressure detecting device, the first thin film transistor switch being connected with the scanning line, the first data line and the pressure detecting device, the pressure detecting device further being connected with the first detection line and the pressure detecting device being used to detect a pressure applied to the pressure detecting unit, to generate a pressure-detection signal; and
a temperature detecting unit, which comprises a second thin film transistor switch and a temperature detecting device, the second thin film transistor switch being connected with the scanning line, the second data line and the temperature detecting device, the temperature detecting device further being connected with the second detection line, the temperature detecting device being used to detect a temperature of an object either near the temperature detecting unit or in contact with the temperature detecting unit, to generate a temperature-detection signal;
the sensing panel further comprises: a first calculating circuit, which connects with the first detection line, the first calculating circuit being used to receive the pressure-detection signal and to calculate a strength of the pressure according to the pressure-detection signal; and a second calculating circuit, which connects with the second detection line, the second calculating circuit being used to receive the temperature-detection signal and to calculate the temperature detected by the temperature detecting unit according to the temperature-detection signal; wherein the first calculating circuit further calculates a position where the pressure is applied, according to the pressure-detection signal and a scanning signal transmitted from the scanning line, or the second calculating circuit further calculates a position where the object is located either near the temperature detecting unit or in contact with the temperature detecting unit, according to the temperature-detection signal and a scanning signal transmitted from the scanning line; adjacent two of the scanning lines transmitting the scanning signals at starting times that differ in a high level voltage duration.

2 . The sensing panel according to claim 1 , wherein the first thin film transistor switch comprises a first gate electrode, a first source electrode and a first drain electrode, the first gate electrode connects with the scanning line, the first source electrode connects with the first data line, the first drain electrode connects with a terminal of the pressure sensing device, another terminal of the pressure sensing device connects with the first detection line;
the second thin film transistor switch comprises a second gate electrode, a second source electrode and a second drain electrode, the second gate electrode connects with the scanning line, the second source electrode connects with the second data line, the second drain electrode connects with a terminal of the temperature sensing device, another terminal of the temperature sensing device connects with the second detection line.

3 . The sensing panel according to claim 1 , wherein the sensing panel further comprises:
a substrate, the scanning line being disposed on the substrate; a first insulation layer, disposed on the substrate, and the first insulation layer covers the scanning line; a semi-conductor layer, disposed on the first insulation layer; a source electrode layer, disposed on the first insulation layer and the semi-conductor layer; a drain electrode layer, disposed on the first insulation layer and the semi-conductor layer; a second insulation layer, disposed on the first insulation layer, the semi-conductor layer, the source electrode layer and the drain electrode layer; a first electrode layer, disposed on the second insulation layer, the first electrode layer being connected with the drain electrode layer through a via hole of the second insulation layer; a dielectric layer, disposed on the first electrode layer; and a second electrode layer, disposed on the dielectric layer.

4 . The sensing panel according to claim 3 , wherein in the pressure sensing unit, the dielectric layer comprises a rubber layer;
in the temperature sensing unit, the dielectric layer comprises a thermal-sensitive metal layer.

5 . The sensing panel according to claim 3 , wherein the substrate is a plastic substrate, the first insulation layer is a first organic insulation layer, the semi-conductor layer is an organic semi-conductor layer, and the second insulation layer is a second organic insulation layer.

6 . A sensing panel, wherein the sensing panel comprises:
at least one scanning line; at least one data line combination, which comprises a first data line and a second data line; at least one signal-detection line combination, which comprises a first detection line and a second detection line; at least one detecting unit combination, wherein the detecting unit combination is connected with the scanning line, the data line combination, and the signal-detection line combination, the detecting unit combination comprises:
a pressure detecting unit, which comprises a first thin film transistor switch and a pressure detecting device, the first thin film transistor switch being connected with the scanning line, the first data line, and the pressure detecting device, the pressure detecting device further being connected with the first detection line and the pressure detecting device being used to detect a pressure applied to the pressure detecting unit, to generate a pressure-detection signal; and
a temperature detecting unit, which comprises a second thin film transistor switch and a temperature detecting device, the second thin film transistor switch being connected with the scanning line, the second data line, and the temperature detecting device, the temperature detecting device further being connected with the second detection line, the temperature detecting device being used to detect a temperature of an object either near the temperature detecting unit or in contact with the temperature detecting unit, to generate a temperature-detection signal.

7 . The sensing panel according to claim 6 , wherein the sensing panel further comprises:
a first calculating circuit, which connects with the first detection line, the first calculating circuit being used to receive the pressure-detection signal and to calculate a strength of the pressure according to the pressure-detection signal; and a second calculating circuit, which connects with the second detection line, the second calculating circuit being used to receive the temperature-detection signal and to calculate the temperature detected by the temperature detecting unit according to the temperature-detection signal.

8 . The sensing panel according to claim 7 , wherein the first calculating circuit further calculates a position where the pressure is applied, according to the pressure-detection signal and a scanning signal transmitted from the scanning line, or the second calculating circuit further calculates a position where the object is located either near the temperature detecting uni

Assignees

• Shenzhen China Star Optoelect

Inventors

• Xu Hongyuan

Classifications

• G06F3/0414 Primary

  using force sensing means to determine a position · CPC title

• G01K7/021

  Particular circuit arrangements (G01K7/026, G01K7/12, G01K7/14 take precedence) · CPC title

• G06F3/04146

  using pressure sensitive conductive elements delivering a boolean signal and located between crossing sensing lines, e.g. located between X and Y sensing line layers · CPC title

• G01L1/146

  for measuring force distributions, e.g. using force arrays (G01L1/148 takes precedence) · CPC title

• G06F3/0412

  Digitisers structurally integrated in a display · CPC title