Monitoring aging of power semiconductor devices based on case temperature

Patent metadata

Field	Value
Publication number	US-2018017613-A1
Application number	US-201715482276-A
Country	US
Kind code	A1
Filing date	Apr 7, 2017
Priority date	Apr 8, 2016
Publication date	Jan 18, 2018
Grant date	—

Abstract

The aging of an electronic component in an electronic power converter can be monitored based on two or more case temperature measurements. A power electronic device is enclosed in a package having a baseplate, in which the power electronic device generates heat during operation and the baseplate transfers heat to a heat dissipating device or a cooling device. Sensors measure temperatures at first and second locations on a surface of the baseplate. A data processor calculates a value for a first parameter based on the temperatures at the first and second locations, in which the first parameter is indicative of an aging process of the power electronic device, and generates a first signal based on a comparison of the calculated value and a first predetermined threshold. The data processor calculates a value for a second parameter based on the first parameter value, a predetermined look-up table, and the temperatures at the first and second locations, in which the second parameter is indicative of another aging process of the semiconductor switching devices, and generates a second signal based on a comparison of the calculated value and a second predetermined threshold.

First claim

1 . A method of monitoring aging of an electronic component in an electronic power converter, the method comprising:
operating an electronic power converter that includes a module having a semiconductor switching device that generates heat during operation; measuring a temperature at a first location on a surface of the module; measuring a temperature at a second location on the surface of the module; calculating a value for a first parameter based on the temperatures at the first and second locations, in which the first parameter is indicative of an aging process of the semiconductor switching device; comparing the calculated value for the first parameter with a first predetermined threshold; generating a first signal based on a comparison of the calculated value and the first predetermined threshold; calculating a value for a second parameter based on the value calculated for the first parameter, a predetermined look-up table, and the temperatures at the first and second locations, in which the second parameter is indicative of another aging process of the semiconductor switching devices; comparing the calculated value for the second parameter with a second predetermined threshold; and generating a second signal based on a comparison of the calculated value and the second predetermined threshold.

2 - 5 . (canceled)

6 . The method of claim 1 in which the semiconductor switching device comprises an insulated-gate bipolar transistor (IGBT).

7 . The method of claim 6 in which calculating the value for the first parameter indicative of the aging of the semiconductor switching device comprises calculating a value for a parameter that is indicative of IGBT substrate solder aging.

8 . The method of claim 6 in which calculating the value for the second parameter indicative of the aging of the semiconductor switching device comprises calculating a value for a parameter that is indicative of IGBT bond wire and emitter metallization aging.

9 - 11 . (canceled)

12 . The method of claim 6 in which calculating the first parameter value comprises determining a first ratio (k) that is representative of a ratio between a first equivalent thermal resistance (R eqC1 ) and a second equivalent thermal resistance (R eqC2 ).

13 . The method of claim 12 in which determining the first ratio (k) comprises determining the first ratio (k) based on an estimated junction temperature ({circumflex over (T)} J ), a first case temperature value (T C1 ), a second case temperature value (T C2 ), an ambient temperature value (T A ).

14 . (canceled)

15 . The method of claim 12 in which the first ratio (k) is indicative of the aging of the semiconductor switching device.

16 . (canceled)

17 . The method of claim 12 , comprising determining a value of a parameter a representing a ratio between an estimated power loss {circumflex over (P)} loss ({circumflex over (T)} J ) and a power loss P loss (T J ).

18 . The method of claim 17 in which calculating the second parameter value comprises determining a change in an on-state collector-emitter voltage (ΔV CEon ) based on a change in the power loss of the IGBT (ΔP loss ) and the value of the parameter α.

19 . (canceled)

20 . The method of claim 18 in which comparing the calculated value for the second parameter with a second predetermined threshold comprises comparing the change in the on-state collector-emitter voltage (ΔV CEon ) with the second predetermined threshold.

21 . (canceled)

22 . The method of claim 6 in which calculating the parameter value comprises determining an estimated power loss of the IGBT ({circumflex over (P)} loss ({circumflex over (P)} J ) based on an estimated junction temperature ({circumflex over (T)} J ).

23 . The method of claim 22 in which calculating the parameter value comprises determining a first estimated equivalent thermal resistance ({circumflex over (R)} eqC1 ) based on the first case temperature value (T C1 ), an ambient temperature value (T A ), and the estimated power loss of the IGBT ({circumflex over (P)} loss ).

24 . The method of claim 23 in which calculating the parameter value comprises determining a second estimated equivalent thermal resistance ({circumflex over (R)} eqC2 ) based on the second case temperature value (T C2 ), the ambient temperature value (T A ), and the estimated power loss of the IGBT ({circumflex over (P)} loss ).

25 . (canceled)

26 . The method of claim 24 in which calculating the first parameter value comprises determining a first ratio (k) between the first estimated equivalent thermal resistance ({circumflex over (R)} eqC1 ) and the second estimated equivalent thermal resistance ({circumflex over (R)} eqC2 ).

27 . The method of claim 26 in which the first ratio (k) is indicative of the aging of the semiconductor switching device.

28 - 86 . (canceled)

87 . An apparatus comprising:
a power converter comprising a module having a semiconductor switching device that generates heat during operation; a first sensor to measure a temperature at a first location on a surface of the module; a second sensor to measure a temperature at a second location on the surface of the module; and a data processor configured to:
calculate a value for a parameter based on the temperatures at the first and second locations, in which the parameter is indicative of an aging of the semiconductor switching device,
compare the calculated value for the parameter with a predetermined threshold, and
generate a signal based on a comparison of the calculated value and the predetermined threshold.

88 . (canceled)

89 . (canceled)

90 . The apparatus of claim 87 in which the semiconductor switching device comprises an insulated-gate bipolar transistor (IGBT).

91 . The apparatus of claim 90 in which the data processor is configured to calculate the value for a parameter indicative of IGBT substrate solder aging.

92 . The apparatus of claim 90 in which the data processor is configured to calculate the value for a parameter indicative of IGBT bond wire and emitter metallization aging.

93 - 130 . (canceled)

131 . A apparatus comprising:
a power electronic device enclosed in a package having a baseplate, in which the power electronic device is configured to generate heat during operation and the baseplate is configured to transfer heat to a heat dissipating device or a cooling device; a first sensor configured to measure a temperature at a first location on a surface of the baseplate; a second sensor configured to measure a temperature at a second location on the surface of the baseplate; and a data processor configured to:
calculate a value for a parameter based on the temperatures at the first and second locations, in which the parameter is indicative of an aging of the power electronic device;
compare the calculated value for the parameter with a predetermined threshold; and
generate a signal based on a comparison of the calculated value and the predetermined threshold.

132 - 135 . (canceled)

136 . The apparatus of claim 131 in which the power electronic device comprises an insulated-gate bipolar transistor (IGBT) module.

137 . (canceled)

138 . (canceled)

139 . The apparatus

Assignees

• Nutech Ventures

Inventors

• Qiao Wei
• Wang Ze
• Qu Liyan

Classifications

• G01R31/2619

  for measuring thermal properties thereof · CPC title

• G01R31/2642 Primary

  Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests · CPC title