Sputtering target and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-2018012739-A1
Application number	US-201715642652-A
Country	US
Kind code	A1
Filing date	Jul 6, 2017
Priority date	Jul 11, 2016
Publication date	Jan 11, 2018
Grant date	—

Abstract

A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M 1 . The element M 1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.

First claim

1 . A sputtering target comprising:
a conductive material comprising indium or zinc, or both indium and zinc; and an insulating material comprising one of an oxide comprising an element M1, a nitride comprising the element M1, and an oxynitride comprising the element M1, wherein the element M1 is two or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be and B, and wherein the conductive material and the insulating material are separated from each other.

2 . The sputtering target according to claim 1 , wherein the element M1 is two or more of Al, Ga and Si.

3 . The sputtering target according to claim 1 ,
wherein the conductive material comprises any one of an oxide, a nitride and an oxynitride, and wherein each of the oxide, the nitride and the oxynitride comprises indium and zinc.

4 . The sputtering target according to claim 3 , wherein the element M1 is Ga.

5 . The sputtering target according to claim 1 ,
wherein the conductive material comprises any one of an oxide, a nitride and an oxynitride, and wherein each of the oxide, the nitride and the oxynitride comprises:
indium or zinc, or both indium and zinc; and
an element M2.

6 . The sputtering target according to claim 5 ,
wherein the element M1 is Ga, and wherein the element M2 is Ti or Ge.

7 . The sputtering target according to claim 1 , wherein the insulating material further comprises zinc.

8 . The sputtering target according to claim 1 , wherein an atomic ratio of the indium in the conductive material is higher than an atomic ratio of the element M1 in the insulating material.

9 . The sputtering target according to claim 1 , wherein each of the conductive material and the insulating material is in a particulate form.

10 . The sputtering target according to claim 1 , wherein each of the conductive material and the insulating material comprises a region having a diameter of less than 10 μm or a similar value.

11 . A method for manufacturing a sputtering target, comprising the steps of:
weighing an oxide of an element M1 and a first zinc oxide as raw materials of an insulating material; weighing indium oxide and a second zinc oxide as raw materials of a conductive material; forming a first mixture by mixing the oxide of the element M1 and the first zinc oxide; forming a first molded body by molding the first mixture with pressure; forming a first baked body by baking the first molded body; forming a first powder by pulverizing the first baked body; forming a second mixture by mixing the indium oxide and the second zinc oxide; forming a second molded body by molding the second mixture with pressure; forming a second baked body by baking the second molded body; forming a second powder by pulverizing the second baked body; forming a third mixture by mixing the first powder and the second powder; and forming a third molded body by molding the third mixture with pressure, wherein the element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be and B, and wherein baking the third molded body is not performed after forming the third molded body, or baking the third molded body is performed at a temperature at which part of the conductive material and part of the insulating material are not combined with each other after forming the third molded body.

12 . The method for manufacturing a sputtering target, according to claim 11 , wherein baking the third molded body is performed at a temperature lower than baking temperatures of the first molded body and the second molded body.

13 . A method for manufacturing a sputtering target, comprising the steps of:
weighing an oxide of an element M1 as a raw material of an insulating material; weighing indium oxide, zinc oxide, and an oxide of an element M2 as raw materials of a conductive material; forming a first mixture by mixing the indium oxide, the zinc oxide, and the oxide of the element M2; forming a first molded body by molding the first mixture with pressure; forming a first baked body by baking the first molded body; forming a first powder by pulverizing the first baked body; forming a second mixture by mixing the first powder and the oxide of the element M1; and forming a second molded body by molding the second mixture with pressure, wherein the element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be and B, wherein the element M2 is one or more kinds of elements selected from Ti, Ge, Sn, V, Ni, Mo, W and Ta, and wherein baking the second molded body is not performed after forming the second molded body, or baking the second molded body is performed at a temperature at which part of the conductive material and part of the insulating material are not combined with each other after forming the second molded body.

14 . The method for manufacturing a sputtering target, according to claim 13 , wherein baking the second molded body is performed at a temperature lower than a baking temperature of the first molded body.

15 . The method for manufacturing a sputtering target, according to claim 13 , wherein the zinc oxide is further used as a raw material of the insulating material.

16 . A method for manufacturing a sputtering target, comprising the steps of:
weighing an oxide of an element M1A and an oxide of an element M1B as raw materials of an insulating material; weighing indium oxide and zinc oxide as raw materials of a conductive material; forming a first mixture by mixing the oxide of the element M1A and the oxide of the element M1B; forming a first molded body by molding the first mixture with pressure; forming a first baked body by baking the first molded body; forming a first powder by pulverizing the first baked body; forming a second mixture by mixing the first powder, the indium oxide and the zinc oxide; and forming a second molded body by molding the second mixture with pressure, wherein the element M1A is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be and B, wherein the element M1B is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be and B and comprises an element of a different kind from the element M1A, and wherein baking the second molded body is not performed after forming the second molded body, or baking the second molded body is performed at a temperature at which part of the conductive material and part of the insulating material are not combined with each other after forming the second molded body.

17 . The method for manufacturing a sputtering target, according to claim 16 , wherein baking the second molded body is performed at a temperature lower than a baking temperature of the first molded body.

18 . The method for manufacturing a sputtering target, according to claim 16 , wherein the zinc oxide is further used as a raw material of the insulating material.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Nakashima Motoki
• Baba Haruyuki

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• B28B1/008

  made from two or more materials having different characteristics or properties (casting for producing layered articles B28B1/16; feeding several succesive layers, optionally of different materials B28B13/022; coating B28B11/04; applying material to surfaces to form a permanent layer thereon B28B19/00) · CPC title

• G02F1/133345

  Insulating layers (G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence) · CPC title