Strain and pressure sensing device, microphone, method for manufacturing strain and pressure sensing device, and method for manufacturing microphone

Patent metadata

Field	Value
Publication number	US-2018009656-A1
Application number	US-201715701633-A
Country	US
Kind code	A1
Filing date	Sep 12, 2017
Priority date	Sep 27, 2011
Publication date	Jan 11, 2018
Grant date	—

Abstract

According to one embodiment, a strain and pressure sensing device includes a semiconductor circuit unit and a sensing unit. The semiconductor circuit unit includes a semiconductor substrate and a transistor. The transistor is provided on a semiconductor substrate. The sensing unit is provided on the semiconductor circuit unit, and has space and non-space portions. The non-space portion is juxtaposed with the space portion. The sensing unit further includes a movable beam, a strain sensing element unit, and first and second buried interconnects. The movable beam has fixed and movable portions, and includes first and second interconnect layers. The fixed portion is fixed to the non-space portion. The movable portion is separated from the transistor and extends from the fixed portion into the space portion. The strain sensing element unit is fixed to the movable portion. The first and second buried interconnects are provided in the non-space portion.

First claim

1 . (canceled)

2 . A sensor, comprising:
a supporter; a beam including a movable portion, an end of the movable portion being fixed to the supporter, the end extending in a first direction; and a sensing element fixed to the movable portion, the sensing element including a first magnetic layer, a direction of a first magnetization of the first magnetic layer being along the first direction.

3 . The device according to claim 2 , wherein the sensing element further includes:
the second magnetic layer; and an intermediate layer provided between the first magnetic layer and the second magnetic layer, the intermediate layer being nonmagnetic.

4 . The device according to claim 3 , wherein an electrical resistance between the first magnetic layer and the second magnetic layer changes in accordance with a deformation of the movable portion.

5 . The device according to claim 3 , wherein the second magnetic layer is a magnetization free layer.

6 . The device according to claim 3 , wherein at least one of the first magnetic layer and the second magnetic layer includes at least one of Fe, Co and Ni.

7 . The device according to claim 2 , wherein the sensing element further includes a bias layer juxtaposed with the first magnetic layer to apply a bias magnetic field to the first magnetic layer.

8 . The device according to claim 3 , wherein a magnetostriction constant of the second magnetic layer is not less than 10 −5 .

Assignees

• Toshiba Kk

Inventors

• Fukuzawa Hideaki
• Ohguro Tatsuya
• Kojima Akihiro
• Sugizaki Yoshiaki
• Takayanagi Mariko
• Fuji Yoshihiko
• Hori Akio
• Hara Michiko

Classifications

• H04R1/08

  Mouthpieces; {Microphones;} Attachments therefor · CPC title

• H04R19/04

  Microphones (H04R19/01 takes precedence) · CPC title

• G01L9/0042

  Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms (details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively) · CPC title

• H04R19/005 Primary

  using semiconductor materials · CPC title

• B81C1/00246

  Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate · CPC title