Battery switch driving circuit
US-2024137017-A1 · Apr 25, 2024 · US
US2018006645A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018006645-A1 |
| Application number | US-201715625018-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 16, 2017 |
| Priority date | Jun 30, 2016 |
| Publication date | Jan 4, 2018 |
| Grant date | — |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
An optical switch includes: a photothyristor that is switched from an off state to an on state by incident light; a light-emitting element that emits outgoing light when the photothyristor is in the on state; and a tunnel junction layer or a III-V compound layer having metallic conductivity. The tunnel junction layer or the III-V compound layer is disposed between the photothyristor and the light-emitting element.
Opening claim text (preview).
What is claimed is: 1 . An optical switch comprising: a photothyristor that is switched from an off state to an on state by incident light; a light-emitting element that emits outgoing light when the photothyristor is in the on state; and a tunnel junction layer or a III-V compound layer having metallic conductivity, the tunnel junction layer or the III-V compound layer being disposed between the photothyristor and the light-emitting element. 2 . The optical switch according to claim 1 , wherein the photothyristor includes a gate layer and a control electrode disposed on the gate layer. 3 . The optical switch according to claim 1 , wherein the light-emitting element includes a semiconductor layer, and the photothyristor includes a voltage reduction layer having a smaller band gap energy than the semiconductor layer of the light-emitting element. 4 . The optical switch according to claim 2 , wherein the light-emitting element includes a semiconductor layer, and the photothyristor includes a voltage reduction layer having a smaller band gap energy than the semiconductor layer of the light-emitting element. 5 . The optical switch according to claim 1 , wherein the light-emitting element has a confined current path. 6 . The optical switch according to claim 2 , wherein the light-emitting element has a confined current path. 7 . The optical switch according to claim 3 , wherein the light-emitting element has a confined current path. 8 . The optical switch according to claim 4 , wherein the light-emitting element has a confined current path. 9 . The optical switch according to claim 1 , wherein the photothyristor has an opening that is provided in a path through which the outgoing light from the light-emitting element is outputted. 10 . The optical switch according to claim 2 , wherein the photothyristor has an opening that is provided in a path through which the outgoing light from the light-emitting element is outputted. 11 . The optical switch according to claim 3 , wherein the photothyristor has an opening that is provided in a path through which the outgoing light from the light-emitting element is outputted. 12 . The optical switch according to claim 4 , wherein the photothyristor has an opening that is provided in a path through which the outgoing light from the light-emitting element is outputted. 13 . The optical switch according to claim 5 , wherein the photothyristor has an opening that is provided in a path through which the outgoing light from the light-emitting element is outputted. 14 . The optical switch according to claim 6 , wherein the photothyristor has an opening that is provided in a path through which the outgoing light from the light-emitting element is outputted. 15 . The optical switch according to claim 7 , wherein the photothyristor has an opening that is provided in a path through which the outgoing light from the light-emitting element is outputted. 16 . The optical switch according to claim 8 , wherein the photothyristor has an opening that is provided in a path through which the outgoing light from the light-emitting element is outputted. 17 . The optical switch according to claim 9 , wherein the opening of the photothyristor has a side wall that is inclined to receive the incident light. 18 . The optical switch according to claim 1 , wherein the photothyristor has a surface that receives the incident light, the photothyristor including an electrode formed on the surface, the surface having a portion that is not covered with the electrode. 19 . The optical switch according to claim 1 , wherein the light-emitting element includes a light-emitting layer, and the optical switch further comprises a distributed Bragg reflector layer that faces the light-emitting layer of the light-emitting element. 20 . The optical switch according to claim 1 , wherein, when the photothyristor is in the off state, a bias voltage is applied to the light-emitting element, the bias voltage maintaining a state in which light is outputted from the light-emitting element, the amount of the light being smaller than the amount of the outgoing light.
controlling {bipolar} semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region · CPC title
Electricity · mapped topic
wherein the radiation-sensitive semiconductor devices and the electric light source share a common body having dual-functionality of light emission and light detection · CPC title
Photothyristors · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.