Semiconductor laser element and semiconductor laser device

Patent metadata

Field	Value
Publication number	US-2017373464-A1
Application number	US-201715633801-A
Country	US
Kind code	A1
Filing date	Jun 27, 2017
Priority date	Jun 28, 2016
Publication date	Dec 28, 2017
Grant date	—

Abstract

Disclosed herein is a semiconductor laser element capable of suppressing a wavelength dependency of a reflection ratio. A reflective film of the semiconductor laser element includes an L 1 layer arranged at a first position from the end faces of the resonator and having a refractive index of n1; and a periodic structure configured by layering a plurality of pairs of an L 2N layer and an L 2N+1 layer. The L 2N layer has a refractive index of n2, and the L 2N+1 layer has a refractive index of n3, where n2<n3. The L1 layer has a linear expansion coefficient of ±30% with respect to a linear expansion coefficient of the substrate and is made of a film having an optical film thickness thinner than λ/4. An L 2 layer arranged at a second position from the end faces of the resonator is made of a film having an optical film thickness thinner than λ/4.

First claim

What is claimed is:

1 . A semiconductor laser element, comprising:
a substrate; semiconductor layers being multi-layered, formed on the substrate and configured to include at least an active layer; and a reflective film constituted with the substrate and the semiconductor layers and provided on at least one of end faces of a resonator, the reflective film including: an L 1 layer arranged at a first position counting from the one of the end faces of the resonator and having a refractive index of n1; and a periodic structure configured by layering, on the L 1 layer, a plurality of pairs of an L 2N layer and an L 2N+1 layer, the L 2N layer being arranged at a 2N -th position (where N is a positive integer) counting from the one of the end faces of the resonator and having a refractive index of n2, the L 2N+1 layer being arranged at a 2N+1 -th position (where N is a positive integer) counting from the one of the end faces of the resonator and having a refractive index of n3, where n2<n3, the L 1 layer having a linear expansion coefficient within ±30% with respect to a linear expansion coefficient of the substrate and being made of a film having an optical film thickness thinner than λ/4, and an L 2 layer arranged at a second position counting from the one of the end faces of the resonator being made of a film having an optical film thickness thinner than λ/4.

2 . The semiconductor laser element according to claim 1 ,
wherein a sum of the optical film thickness of the L 1 layer and the optical film thickness of the L 2 layer is λ/4 or approximately λ/4.

3 . The semiconductor laser element according to claim 1 , further comprising an uppermost layer arranged on the periodic structure and having a refractive index of n4, where n2≦n4<n3.

4 . The semiconductor laser element according to claim 1 ,
wherein the optical film thickness of the L 1 layer is equal to or greater than 10 nm and equal to or less than 90 nm.

5 . The semiconductor laser element according to claim 1 ,
wherein the refractive index of the L 1 layer is within a range between 1.5 and 1.8.

6 . The semiconductor laser element according to claim 1 ,
wherein the L 1 layer is made of alumina (Al 2 O 3 ).

7 . The semiconductor laser element according to claim 1 ,
wherein the refractive index of the L 2N layer is within a range between 1.4 and 3.5.

8 . The semiconductor laser element according to claim 7 ,
wherein the L 2N layer is made of silicon dioxide (SiO 2 ).

9 . The semiconductor laser element according to claim 1 ,
wherein the refractive index of the L 2N+1 layer is within a range between 1.5 and 4.0.

10 . The semiconductor laser element according to claim 9 ,
wherein the L 2N+1 layer is made of one or more substances selected from a group consisting of silicon nitride (SiN x ), zirconium oxide (ZrO x ), titanium oxide (TiO x ), and amorphous silicon (α-Si).

11 . The semiconductor laser element according to claim 1 ,
wherein the refractive index of n1 of the L 1 layer and the refractive index of n2 of the L 2 layer satisfies a relationship expressed by n1>n2.

12 . The semiconductor laser element according to claim 1 , further comprising:
an uppermost layer arranged on the periodic structure and having a refractive index of n4, where n2≦n4<n3, and a refractive index of the uppermost layer being within a range between 1.4 and 3.5.

13 . The semiconductor laser element according to claim 12 ,
wherein the uppermost layer is made of alumina (Al 2 O 3 ).

14 . The semiconductor laser element according to claim 1 , further comprising:
an uppermost layer arranged on the periodic structure and having a refractive index of n4, where n2≦n4<n3, and the uppermost layer being made of a same substance as the L 2N layer.

15 . The semiconductor laser element according to claim 1 ,
wherein a reflection ratio of the reflective film is equal to or greater than 40%.

16 . A semiconductor laser element, comprising:
a substrate; semiconductor layers being multi-layered, formed on the substrate and configured to include at least an active layer; and a reflective film provided on at least one of end faces of a resonator constituted with the substrate and the semiconductor layers, and the reflective film being a multi-layered reflective film having an amount of change in a reflection ratio equal to or less than 0.10% within a range of ±10 nm from a center wavelength.

17 . A semiconductor laser device comprising:
the semiconductor laser element according to claim 1 ; and a light receiving unit configured to receive laser light emitted from at least one of the end faces of the resonator via the reflective film, and the semiconductor laser device being controlled by an external controller configured to convert the laser light received by the light receiving unit into a current and to control a current to be fed to the semiconductor laser element based on a value of the current converted.

Assignees

• Ushio Electric Inc

Inventors

• Inoue Yutaka
• Kawanaka Satoshi
• Uehara Hiroaki

Classifications

• H01S5/042

  Electrical excitation {; Circuits therefor (monolithically integrated laser drive components H01S5/0261)} · CPC title

• H01S5/22

  having a ridge or stripe structure · CPC title

• H01S5/02469

  Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC · CPC title

• H01S5/02212

  Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis · CPC title

• H01S5/026 Primary

  Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06) · CPC title