Apparatus for processing a wafer and method of depositing a thin film using the same

Patent metadata

Field	Value
Publication number	US-2017369994-A1
Application number	US-201715624255-A
Country	US
Kind code	A1
Filing date	Jun 15, 2017
Priority date	Jun 28, 2016
Publication date	Dec 28, 2017
Grant date	—

Abstract

An apparatus for processing a substrate may include a chamber, a substrate support, a showerhead structure and a purge ring structure. The purge ring structure may be arranged at an edge portion of the substrate support to inject a deposition-preventing gas, which may be supplied from the substrate support, to an edge portion of an upper surface of the substrate. The purge ring structure may include a purge ring and a plurality of bosses. The purge ring may be configured to surround the substrate. The bosses may be protruded from an inner surface of the purge ring in a radius direction of the substrate to form a gap between the inner surface of the purge ring and the edge portion of the substrate. The deposition-preventing gas may be supplied to the upper surface of the substrate through the gap.

First claim

What is claimed is:

1 . An apparatus for processing a substrate, the apparatus comprising:
a chamber having a sealed process region; a substrate support arranged at a lower region of the chamber to receive the substrate, the substrate support including a gas passageway configured to exhaust a deposition-preventing gas; a showerhead arranged at an upper region of the chamber to supply a source gas and a reaction gas to the substrate support; and a purge ring structure arranged at an edge portion of the substrate support to supply the deposition-preventing gas supplied from the substrate support to an edge portion of an upper surface of the substrate, wherein the purge ring structure comprises a purge ring installed at an edge portion of the substrate support to surround the substrate, and a plurality of bosses protruded from an inner surface of the purge ring in a radius direction of the substrate, and the bosses have function as to form a gap between the inner surface of the purge ring and the edge portion of the substrate through which the deposition-preventing gas is supplied to the upper surface of the substrate.

2 . The apparatus of claim 1 , wherein each of the bosses has a thickness of about 0.1 mm to about 1.5 mm toward a center point of the purge ring.

3 . The apparatus of claim 2 , wherein the bosses are at least three for providing the gap between the edge portion of the substrate and the inner surface of the purge ring.

4 . The apparatus of claim 1 , wherein the purge ring structure further comprises an inclined portion formed at upper portion of an inner surface of the purge ring to align the substrate with the substrate support.

5 . The apparatus of claim 1 , wherein the deposition-prevention gas comprises an Ar gas.

6 . A method of deposition a thin film using the apparatus in claim 1 , the method comprising:
loading the substrate on the substrate support; upwardly moving the substrate support to the process region; depositing the thin film on the substrate; downwardly moving the substrate support; and unloading the substrate from the chamber, wherein depositing the thin film comprises: supplying a source gas to the substrate; supplying a reaction gas to the substrate; and supplying the deposition-preventing gas to the edge portion of the upper surface of the substrate through the gap during supplying the source gas and the reaction gas.

7 . The method of claim 6 , further comprising supplying an additional reaction gas to the edge portion of the substrate through the gap.

8 . The method of claim 7 , wherein the additional reaction gas comprises a material substantially the same as that of the reaction gas.

9 . The method of claim 6 , wherein the deposition-preventing gas comprises an Ar gas.

Assignees

• Wonik Ips Co Ltd

Inventors

• Lee Dae Jun
• Kim Yong Jin
• Baik Choon Kum

Classifications

• C23C16/45544

  characterized by the apparatus · CPC title

• C23C16/4412

  Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps · CPC title

• C23C16/45521

  the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery · CPC title

• C23C16/4408 Primary

  by purging residual gases from the reaction chamber or gas lines · CPC title

• C23C16/45565

  Shower nozzles · CPC title