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Piezoelectric thin film resonator, filter, and multiplexer
US2017366157A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017366157-A1 |
| Application number | US-201715616066-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 7, 2017 |
| Priority date | Jun 16, 2016 |
| Publication date | Dec 21, 2017 |
| Grant date | — |
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Abstract
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A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; lower and upper electrodes facing each other across at least a part of the piezoelectric film; a first insertion layer located between the lower and upper electrodes and located in at least a part of an outer peripheral region within a resonance region in which the lower and upper electrodes face each other across the piezoelectric film, the first insertion layer being not located in a center region of the resonance region; and a second insertion layer located between the lower and upper electrodes and located in at least a part of the outer peripheral region, the second insertion layer being not located in the center region, a position of an edge of the second insertion layer being different from a position of an edge of the first insertion film in the resonance region.
First claim
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What is claimed is: 1 . A piezoelectric thin film resonator comprising: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film; a first insertion layer located between the lower electrode and the upper electrode and located in at least a part of an outer peripheral region within a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, the first insertion layer being not located in a center region of the resonance region; and a second insertion layer located between the lower electrode and the upper electrode and located in at least a part of the outer peripheral region within the resonance region, the second insertion layer being not located in the center region of the resonance region, a position of an edge of the second insertion layer in the resonance region being different from a position of an edge of the first insertion film in the resonance region. 2 . The piezoelectric thin film resonator according to claim 1 , wherein the first insertion layer and the second insertion layer have different acoustic impedance. 3 . The piezoelectric thin film resonator according to claim 1 , wherein the first insertion layer and the second insertion layer have different permittivity. 4 . The piezoelectric thin film resonator according to claim 1 , wherein the first insertion layer and the second insertion layer are made of a same material. 5 . The piezoelectric thin film resonator according to claim 1 , wherein the first insertion layer and the second insertion layer are in contact with each other. 6 . The piezoelectric thin film resonator according to claim 1 , wherein the first insertion layer and the second insertion layer are separated across a part of the piezoelectric film. 7 . The piezoelectric thin film resonator according to claim 1 , wherein at least one of the first insertion layer and the second insertion layer is inserted in the piezoelectric film. 8 . The piezoelectric thin film resonator according to claim 1 , wherein at least one of the first insertion layer and the second insertion layer is located between the piezoelectric film and the lower electrode or between the piezoelectric film and the upper electrode. 9 . The piezoelectric thin film resonator according to claim 1 , wherein at least one of the first insertion layer and the second insertion layer is an air layer. 10 . A filter comprising: a piezoelectric thin film resonator including: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film; a first insertion layer located between the lower electrode and the upper electrode and located in at least a part of an outer peripheral region within a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, the first insertion layer being not located in a center region of the resonance region; and a second insertion layer located between the lower electrode and the upper electrode and located in at least a part of the outer peripheral region within the resonance region, the second insertion layer being not located in the center region of the resonance region, a position of an edge of the second insertion layer in the resonance region being different from a position of an edge of the first insertion film in the resonance region. 11 . A multiplexer comprising: a filter including a piezoelectric thin film resonator, wherein the piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film; a first insertion layer located between the lower electrode and the upper electrode and located in at least a part of an outer peripheral region within a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, the first insertion layer being not located in a center region of the resonance region; and a second insertion layer located between the lower electrode and the upper electrode and located in at least a part of the outer peripheral region within the resonance region, the second insertion layer being not located in the center region of the resonance region, a position of an edge of the second insertion layer in the resonance region being different from a position of an edge of the first insertion film in the resonance region.
Assignees
Inventors
Classifications
for the manufacture of piezoelectric or electrostrictive resonators or networks (H03H3/08 takes precedence) · CPC title
of lateral leakage between adjacent resonators · CPC title
Air-gaps · CPC title
of a piezoelectric layer · CPC title
Acoustic mirrors · CPC title
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Frequently asked questions
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- What does patent US2017366157A1 cover?
- A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; lower and upper electrodes facing each other across at least a part of the piezoelectric film; a first insertion layer located between the lower and upper electrodes and located in at least a part of an outer peripheral region within a resonance region in which the lower and upper electrode…
- Who is the assignee on this patent?
- Taiyo Yuden Kk
- What technology area does this patent fall under?
- Primary CPC classification H03H9/02015. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Dec 21 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).