METHOD FOR MANUFACTURlNG AN ELECTRICAL CONTACT ON A STRUCTURE

Patent metadata

Field	Value
Publication number	US-2017358451-A1
Application number	US-201715619931-A
Country	US
Kind code	A1
Filing date	Jun 12, 2017
Priority date	Jun 13, 2016
Publication date	Dec 14, 2017
Grant date	—

Abstract

The invention relates to a method for manufacture of an electrical contact on a structure ( 10 ) made of an anisotropic material NA which exhibits an anisotropic electrical conductivity, where the structure ( 10 ) exhibits an axial electrical conductivity along a first axis XX′ of the structure ( 10 ) and an orthogonal conductivity along a direction YY′ orthogonal to the first axis XX′ of the structure ( 10 ), where the orthogonal conductivity is less than the axial conductivity, where the method comprises:
a step for the formation of a conductive electrode ( 20 ), with an initial thickness Ei, comprising a species M, on a first surface ( 30 ) of the structure ( 10 ), where the first surface ( 30 ) is orthogonal to the orthogonal direction YY′; the method being characterized in that the step for the formation of the conductive electrode ( 20 ) is followed by a step for implantation of species X through the conductive electrode ( 20 ), into the structure ( 10 ).

First claim

1 . Method for manufacture of an electrical contact on a structure ( 10 ) made of an anisotropic material NA which exhibits an anisotropic electrical conductivity, where the structure ( 10 ) exhibits an axial electrical conductivity σ // along a first axis XX′ of the structure ( 10 ) and at least one orthogonal electrical conductivity σ ⊥ along at least one direction YY′ orthogonal to the first axis XX′ of the structure ( 10 ), where the at least one electrical conductivities σ ⊥ are less than the axial electrical conductivity σ // , where the method comprises:
a step for the formation of a conductive electrode ( 20 ), with an initial thickness Ei, comprising at least one species M, on a first surface ( 30 ) of the structure ( 10 ), where the first surface ( 30 ) is orthogonal to the at least one directions YY′;
the method being characterized in that the step for the formation of the conductive electrode ( 20 ) is followed by a step for implantation of species X through the conductive electrode ( 20 ), into the structure ( 10 ).

2 . Method according to claim 1 , wherein the step for implantation of the species X is carried out solely through the conductive electrode ( 20 ), advantageously a mask which offers an opening which corresponds to the conductive electrode ( 20 ) is arranged on the structure ( 10 ) before the step for implantation of the species X.

3 . Method according to claim 1 , wherein the species M is implanted by recoil into the structure ( 10 ) during the step for implantation of the species X.

4 . Method according to claim 1 , wherein the species M is adapted to form chemical bonds with the anisotropic material NA.

5 . Method according to claim 1 , wherein the species X are adapted to form chemical bonds with the anisotropic material NA.

6 . Method according to claim 1 , wherein the species X and the species M are of the same chemical nature, advantageously identical.

7 . Method according to claim 1 , wherein the implantation step is carried out using an implantation energy of the species X which confers upon the species X sufficient energy to pass through the structure ( 10 ), when it is without the conductive electrode ( 10 ), in its entirety through the first surface ( 30 ) and along a direction YY′ orthogonal to said first surface ( 30 ).

8 . Method according to claim 1 , wherein the step for implantation of the species X is carried out in such a way that at the end of said step the conductive electrode ( 20 ) exhibits a non-zero residual thickness which is less than the initial thickness Ei and than the implantation depth Rp of the species X in the conductive electrode ( 20 ).

9 . Method according to claim 1 , wherein the step for implantation of species X is followed by a step comprising thickening of the electrode ( 20 ).

10 . Method according to claim 1 , wherein the anisotropic material NA comprises one or more materials chosen from amongst: an insulated carbon nanotube, a bundle of carbon nanotubes, graphene, transition metal dichalcogenides, 2D materials, Van der Waals heterostructures.

11 . Method according to claim 1 , wherein the species M comprises at least one of the elements chosen from amongst: Pd, Au, Ti, Ta, Cr, Al, Mo, Co, W, Ni, Pt, Zr, Nb, Ga, In, Bi.

12 . Method according to claim 1 , wherein the initial thickness Ei is between 0.1 nm and 50 nm.

13 . Method according to claim 1 , wherein the implanted species X comprise at least one of the elements chosen from amongst: Pd, Au, Ti, Ta, Cr, Al, Mo, Co, W, Ni, Pt, Zr, Nb, Ga, In, Bi, Ar, Kr, Xe, S, Se, Te.

14 . Method according to claim 1 , wherein the step for implantation of species X is carried out at an implantation energy of between 0.1 and 1000 keV.

15 . Method according to claim 1 , wherein the step for implantation of species X is carried out in accordance with a dose of species X of between 10 10 and 10 18 ions per cm 2 .

16 . Method according to claim 1 , wherein the step for implantation of species X is followed by thermal annealing carried out at a temperature of between 300 and 500° C., in an inert or reducing atmosphere.

Assignees

• Commissariat Energie Atomique

Inventors

• Ramos Raphael
• Dijon Jean

Classifications

• H10P14/3464

  Nanotubes · CPC title

• H10P14/3462

  Nanowires · CPC title

• H10P14/3461

  Nanoparticles · CPC title

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/3406

  Carbon, e.g. diamond-like carbon · CPC title