Aluminum apparatus with aluminum oxide layer and method for forming the same

Patent metadata

Field	Value
Publication number	US-2017358430-A1
Application number	US-201615182334-A
Country	US
Kind code	A1
Filing date	Jun 14, 2016
Priority date	Jun 14, 2016
Publication date	Dec 14, 2017
Grant date	—

Abstract

In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.

First claim

What is claimed is:

1 . A method comprising:
chemically treating an aluminum body with at least one of an alkaline solution and an acid solution; performing anode-oxidization on the chemically treated aluminum body to form an aluminum oxide layer; and treating the aluminum oxide layer with hot water at a temperature of more than 75° C. or steam, wherein the aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.

2 . The method of claim 1 , wherein the average width of the columnar grains is in a range from 25 nm to 35 nm.

3 . The method of claim 1 , wherein the width of the columnar grains is substantially constant from an outer surface of the aluminum oxide layer to a depth of at least ½ T, where T is a thickness of the aluminum oxide layer.

4 . The method of claim 3 , wherein the width of the columnar grains is substantially constant from the outer surface of the aluminum oxide layer to an interface between the aluminum body and the aluminum oxide layer.

5 . The method of claim 1 , wherein a voltage value applied in the anode-oxidization is substantially constant.

6 . The method of claim 4 , wherein the substantially constant voltage value is in a range from 15 V to 25 V and variation during the anode-oxidization is equal to or less than 10%.

7 . The method of claim 1 , wherein an average growth rate of the aluminum oxide layer in the anode-oxidization is in a range from 30 nm/min to 70 nm/min.

8 . The method of claim 1 , wherein the aluminum body before the chemically treating has a surface roughness Ra from 0.5 μm to 1.5 μm.

9 . The method of claim 1 , wherein an electrolyte in the anode-oxidization includes H 2 SO 4 .

10 . The method of claim 1 , wherein the anode-oxidization is performed at a temperature of −20° C. to 5° C.

11 . The method of claim 1 , wherein the aluminum oxide layer after being treated with hot water or steam includes a Boehmite phase.

12 . The method of claim 1 , further comprising, before the chemically treating, annealing the aluminum body at a temperature of 250° C. to 350° C.

13 . An aluminum apparatus comprising:
an aluminum body; and an aluminum oxide layer formed on the aluminum body, wherein: the aluminum oxide layer includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm, and the width of the columnar grains is substantially constant from an outer surface of the aluminum oxide layer to a depth of at least ½ T, where T is a thickness of the aluminum oxide layer.

14 . The aluminum apparatus of claim 13 , wherein the average width of the plural columnar grains is has a width from 25 nm to 35 nm.

15 . The aluminum apparatus of claim 13 , wherein the aluminum oxide layer includes a Boehmite phase.

16 . The aluminum apparatus of claim 13 , wherein the thickness T of the aluminum oxide layer is in a range from 20 μm to 200 μm.

17 . The aluminum apparatus of claim 13 , wherein the aluminum oxide layer shows a peak relating to —SO 4 ligand and a peak relating to at least one of Boehmite phase and —OH ligand stronger than a peak relating to carbon in a Raman spectrum.

18 . The aluminum apparatus of claim 13 , wherein:
the aluminum apparatus is a plasma chamber, and the aluminum oxide layer is disposed such that the aluminum oxide layer is in contact with generated plasma.

19 . A method, comprising:
generating plasma in a plasma chamber; and performing at least one of depositing a film, etching and cleaning by using the plasma, wherein: the plasma chamber comprises:
an aluminum body; and
an aluminum oxide layer formed on the aluminum body,
the aluminum oxide layer is in contact with the generated plasma or radicals generated by the plasma, the aluminum oxide layer includes a Boehmite phase, the aluminum oxide layer includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm, and the width of the columnar grains is substantially constant from an outer surface of the aluminum oxide layer to a depth of at least ½ T, where T is a thickness of the aluminum oxide layer.

20 . The method of claim 19 , wherein the plasma is generated from a gas containing at least one of NH 3 , NF 3 , H 2 and F 2 .

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chiu Ru-Chien
• Chen Bing-Hung
• Koai Keith Kuang-Kuo

Classifications

• H01J2237/3321

  CVD [Chemical Vapor Deposition] · CPC title

• C25D11/16

  Pretreatment {, e.g. desmutting} · CPC title

• H01J37/32467

  Material · CPC title

• H01J2237/335

  Cleaning · CPC title

• H01J2237/334

  Etching · CPC title