Method for Preparing Transparent Sheet Materials

Patent metadata

Field	Value
Publication number	US-2017350006-A1
Application number	US-201515536746-A
Country	US
Kind code	A1
Filing date	Dec 14, 2015
Priority date	Dec 19, 2014
Publication date	Dec 7, 2017
Grant date	—

Abstract

A method for preparing a transparent sheet material comprising an organic, polymeric substrate and inorganic layers on each side of the substrate, the method comprising the steps of: a) providing an apparatus for generating a glow discharge plasma, said apparatus comprising at least two opposing electrodes, a power supply for the electrodes and a treatment space between the electrodes; b) providing the treatment space with a gas mixture at about atmospheric pressure, the gas mixture comprising a reactive gas and a precursor; and c) moving a transparent substrate through the treatment space comprising the gas mixture at an average speed of at least 1 m/min while applying an electrical potential across the electrodes, thereby generating a glow discharge plasma in the treatment space and depositing an inorganic layer on one or both sides of the substrate; wherein the electrodes apply a discharge energy to the substrate of less than 25 J/cm 2 .

First claim

1 . A method for preparing a transparent sheet material comprising an organic, polymeric substrate and inorganic layers on each side of the substrate, the method comprising the steps of:
a) providing an apparatus for generating a glow discharge plasma, said apparatus comprising at least two opposing electrodes, a power supply for the electrodes and a treatment space between the electrodes; b) providing the treatment space with a gas mixture at about atmospheric pressure, the gas mixture comprising a reactive gas and a precursor; and c) moving a transparent substrate through the treatment space comprising the gas mixture at an average speed of at least 1 m/min while applying an electrical potential across the electrodes, thereby generating a glow discharge plasma in the treatment space and depositing an inorganic layer on one or both sides of the substrate; wherein: (i) the organic, polymeric substrate is polyethylene terephthalate or polyethylene naphthalate; (ii) the electrodes apply a discharge energy to the substrate of less than 25 J/cm 2 ; and (iii) the average thickness of the inorganic layer(s) on each side of the substrate is less than 5 nm.

2 . The method according to claim 1 wherein step c) further comprises heating substrate in the treatment space.

3 . (canceled)

4 . The method according to claim 1 wherein the inorganic layers on each side of the substrate are applied to the substrate sequentially.

5 . (canceled)

6 . The method according to claim 1 wherein the inorganic layer on each side of the substrate comprises silicon.

7 .- 9 . (canceled)

10 . The method according to claim 1 wherein the substrate and the transparent sheet material are sufficiently flexible for them to be wound on and off a spool having a diameter of 1 cm.

11 . The method according to claim 1 in which the power supply provides a duty cycle of at least 90%.

12 . (canceled)

13 . The method according claim 1 wherein the gas mixture further comprises an inert gas.

14 . The method according to claim 1 wherein the total amount of reactive gas(es) present in the gas mixture is 5 to 25 vol %.

15 . The method according to claim 1 wherein the total amount of precursor(s) present in the gas mixture is at least 100 ppm.

16 . The method according to claim 1 wherein the total amount of inert gas(es) present in the gas mixture is 75 to 96 vol %.

17 .- 22 . (canceled)

23 . The method according to claim 1 wherein:
(iv) step c) further comprises heating substrate in the treatment space;
(v) the inorganic layer on each side of the substrate comprises silicon
(vi) the substrate and the transparent sheet material are sufficiently flexible for them to be wound on and off a spool having a diameter of 1 cm;
(vii) the power supply provides a duty cycle of at least 90%;
(viii) the gas mixture further comprises an inert gas;
(ix) the total amount of reactive gas(es) present in the gas mixture is 10 to 23 vol %;
(x) the total amount of precursor(s) present in the gas mixture is at least 100 ppm; and
(xi) the total amount of inert gas(es) present in the gas mixture is 77 to 90 vol %.

24 . The method according to claim 1 wherein:
(iv) step c) further comprises heating substrate in the treatment space;
(v) the inorganic layer on each side of the substrate comprises silicon;
(vii) the power supply provides a duty cycle of at least 90%;
(viii) the gas mixture further comprises an inert gas;
(ix) the total amount of reactive gas(es) present in the gas mixture is 10 to 23 vol %;
(x) the total amount of precursor(s) present in the gas mixture is at least 100 ppm; and
(xi) the total amount of inert gas(es) present in the gas mixture is 77 to 90 vol %.

Assignees

• Fujifilm Mfg Europe Bv

Inventors

• Bouwstra Jan
• De Vries Hindrik
• Starostine Serguei

Classifications

• C23C16/402 Primary

  Silicon dioxide · CPC title

• C23C16/24 Primary

  Deposition of silicon only · CPC title

• C23C16/46

  characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) · CPC title

• C23C16/50

  using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} · CPC title

• H01J37/32018

  Glow discharge · CPC title