Detection device

Patent metadata

Field	Value
Publication number	US-2017315244-A1
Application number	US-201515528102-A
Country	US
Kind code	A1
Filing date	Nov 16, 2015
Priority date	Nov 21, 2014
Publication date	Nov 2, 2017
Grant date	—

Abstract

The invention provides a detection device including a fewer types of elements for detection of radial rays and configured to appropriately detect the radial rays. A detection device 1 includes a light source 30 configured to emit radial rays, a detection circuit board 10 provided with a plurality of detection circuits each configured to output a signal according to a control signal supplied from a driving circuit 201, and a signal reading circuit 202 configured to acquire the signals outputted from the plurality of detection circuits. The detection circuits each include a detection thin film transistor having threshold voltage varied in accordance with irradiation of the radial rays. The signal reading circuit 202 transmits, to an image processing device 40, a difference between a signal outputted from each of the detection circuits in accordance with a control signal supplied before irradiation of the radial rays and a signal outputted from the detection circuit in accordance with a control signal supplied after irradiation of the radial rays.

First claim

1 . A detection device comprising:
an irradiation unit configured to emit radial rays; a driving unit configured to output a control signal; a detection circuit configured to output a signal according to the control signal; and a signal processor configured to acquire the signal outputted from the detection circuit; wherein the detection circuit includes a detection thin film transistor having threshold voltage varied in accordance with irradiation of the radial rays, and the signal processor outputs a difference between a signal outputted from the detection circuit in accordance with a control signal supplied before irradiation of the radial rays and a signal outputted from the detection circuit in accordance with a control signal supplied after irradiation of the radial rays.

2 . The detection device according to claim 1 , wherein the radial rays are X-rays.

3 . The detection device according to claim 1 , wherein
the detection circuit further includes a driving thin film transistor having threshold voltage varied by irradiation of the radial rays more slightly than the detection thin film transistor, the detection thin film transistor and the driving thin film transistor each include a semiconductor layer, and the semiconductor layer in the detection thin film transistor is larger in area than the semiconductor layer in the driving thin film transistor.

4 . The detection device according to claim 1 , wherein
the detection circuit further includes a driving thin film transistor having threshold voltage varied by irradiation of the radial rays more slightly than the detection thin film transistor, the detection thin film transistor and the driving thin film transistor each include a gate electrode, an insulating film covering the gate electrode and including an oxide film, and a semiconductor layer provided on the insulating film, and the oxide film included in the insulating film of the detection thin film transistor is thicker than the oxide film included in the insulating film of the driving thin film transistor.

5 . The detection device according to claim 1 , wherein
the detection circuit further includes a driving thin film transistor having threshold voltage varied by irradiation of the radial rays more slightly than the detection thin film transistor, the detection thin film transistor and the driving thin film transistor each include a semiconductor layer, and the semiconductor layer in the detection thin film transistor is thicker than the semiconductor layer in a thin film transistor other than the detection thin film transistor.

6 . The detection device according to claim 1 , wherein
the detection circuit further includes a driving thin film transistor having threshold voltage varied by irradiation of the radial rays more slightly than the detection thin film transistor, and the detection thin film transistor is larger in channel length than the driving thin film transistor.

7 . The detection device according to claim 1 , wherein
the detection circuit further includes a driving thin film transistor having threshold voltage varied by irradiation of the radial rays more slightly than the detection thin film transistor, and the detection thin film transistor includes a semiconductor layer containing low-temperature polysilicon, and the driving thin film transistor includes a semiconductor layer containing an oxide.

Assignees

• Sharp Kk

Inventors

• ITO Kazuatsu
• Mori Shigeyasu
• Miyamoto Tadayoshi
• Yamamoto Kaoru

Classifications

• H01L31/02019

  Electricity · mapped topic

• G01T1/24 Primary

  with semiconductor detectors · CPC title

• H01L31/119

  Electricity · mapped topic

• H01L31/032

  Electricity · mapped topic

• H10D30/67

  Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)} · CPC title